the modulation - doped algaas / gaas heterostructure is a materials platform of great importance to the study of nanoscale electronic devices with quantum mechanical functionalities , and their development towards future technologies .
@xcite studies of the two - dimensional electron gas ( 2deg ) formed in an algaas / gaas heterostructure at temperatures below @xmath0  k have met with great success , both in terms of the novel physics of 2d electrons ,  @xcite and as an underpinning technology for quantum wires ,  @xcite quantum dots ,  @xcite and other ballistic transport devices .
@xcite devices based on two - dimensional hole gases ( 2dhgs ) have received less attention ; this is not from a lack of interesting physics .
the higher effective mass of holes leads to stronger carrier interactions , making 2dhgs of interest for studies of the metal - insulator transition  @xcite and bilayer quantum hall effect .
@xcite additionally , the spin-@xmath1 nature of holes , arising from strong spin - orbit interactions , has driven interest in novel phenomena in 2dhgs , such as @xmath2-factor anisotropy  @xcite and anomalous spin - polarization ,  @xcite as well as studies of the @xmath3 plateau in quantum point contacts ( qpcs ) ,  @xcite the quantum dot kondo effect  @xcite and berry s phase in aharonov - bohm rings .  @xcite the reduced hyperfine interaction for holes in gaas  @xcite leads to reduced spin - decoherence time compared to electrons ,  @xcite making gaas hole quantum dots of interest for quantum computing .
@xcite    studies of low - dimensional hole devices are impeded by difficulties in making devices with high electronic stability and low noise / drift under electrostatic gating .
telegraph noise , instability and gate hysteresis were particularly problematic in initial attempts to realize hole qpcs  @xcite using si - doped ( 311)a - oriented 2dhgs .
similar issues were reported for gated 2dhgs in c - doped ( 100 ) algaas / gaas heterostructures .
@xcite numerous explanations have been offered including surface diffusion of ohmic contact metal producing a low mobility layer at or close to the surface ,  @xcite charge transfer to states either at the interfaces or in the semiconductor ,  @xcite carrier trapping in deep acceptor levels or in insulating parallel doping layers ,  @xcite or that metallic gates on p - gaas are ` inherently leaky ' because of a reduced schottky barrier relative to n - gaas .
@xcite firmly establishing the origin of the gate instability / hysteresis will contribute towards the development of improved materials and devices for the study of low - dimensional hole systems .
here we show that gate instability / hysteresis in p - type modulation - doped algaas / gaas heterostructures is caused by a complex interplay between surface - state trapping and gate - induced charge migration within the doping layer .
we focus here on si - doped ( 311)a - oriented heterostructures , but similar physics may occur in c - doped ( 100)-oriented heterostructures also .
we use three different experimental approaches : first , we rule out direct charge leakage between the gate and semiconductor by studying devices where an insulator layer is deposited underneath the gates ; two insulators , al@xmath4o@xmath5 and polyimide , were investigated .
we find that insulating the gates does not eliminate the hysteresis , instead , it makes the hysteresis significantly worse .
a recent study of a qpc featuring hfo@xmath4-insulated gates on a c - doped ( 100 ) algaas / gaas heterostructure  @xcite also shows that hysteresis can remain despite insulating the gates . in our experiment ,
the semiconductor surface / gate interface is the only aspect that is different between the insulated and uninsulated gate devices ; they are on the same heterostructure with the same doping .
the resulting large difference in hysteresis points to surface - states as an important contributing factor .
hence our second approach was to investigate surface effects by studying matched algaas / gaas heterostructures , both with and without an al@xmath4o@xmath5 gate insulator layer , and schottky - gated p - type heterostructures with ( nh@xmath6)@xmath4s@xmath7 surface passivation treatment  @xcite performed prior to gate deposition .
in contrast to hole devices , the addition of the insulator does not induce hysteresis for electron devices but alters the pinch - off voltage .
sulfur passivation does not bring consistent improvement in p - type devices , despite increasing the photoluminescence yield equivalently on ( 100 ) and ( 311 ) surfaces .
@xcite in the one instance where passivation did bring significant improvement , hysteresis was still observed .
this led us to suspect charge migration in the doping layer .
hence our third approach was to investigate dopant effects through variable temperature studies .
in particular , we compare the hysteresis in hole devices to electron devices at elevated temperatures @xmath8  k , where deep donors known as dx centers  @xcite begin to detrap ,  @xcite allowing charge to migrate between si dopant sites .
we observe gate hysteresis in electron devices at @xmath9  k very similar to that in hole devices at @xmath10  k. we also show that the hysteresis can be reduced in hole devices by reducing the thickness of the dopant layer from @xmath11  nm to less than @xmath12  nm ( @xmath13-doped ) .
overall , our results point to competition between surface - state and dopant related processes with different time / energy scales as the cause of the hysteresis , and have wider implications given recent interest in surface charge as a source of scattering  @xcite and dopant charge migration as a source of noise  @xcite in algaas / gaas heterostructures and quantum devices .
the paper is structured as follows .
section  ii briefly addresses materials and methods , with an extended discussion presented in appendix a. in section  iii we focus on gate leakage and discuss hole devices featuring al@xmath4o@xmath5 and polyimide gate insulators .
sections  iv and v concentrate on surface - states and charge migration in the dopant layer , respectively .
finally , in section vi , we draw conclusions based on the overall results and discuss the broader implications of the work for the study of low - dimensional devices in algaas / gaas heterostructures .
appendices b - d contain additional supporting data .
five separate algaas / gaas heterostructures denoted 1-e , 1-h , 2-e , 2-h and 3-h were made for this study ; the first four are ` matched ' electron ( -e ) and hole ( -h ) heterostructures produces by deposition onto side - by - side halves of 2 " diameter gaas substrate , one ( 100)-oriented and the other ( 311)-oriented . this relies on the orientation - dependent amphoteric nature of si dopants in algaas .
@xcite the first four wafers feature an @xmath11  nm si - doped algaas modulation doping layer separated from the 2dhg/2deg by @xmath14  nm of undoped algaas , the fifth features a si - doping layer separated from the 2dhg/2deg by @xmath15  nm of undoped algaas .
these heterostructures have typical carrier densities @xmath16
@xmath17 and mobilities @xmath18  @xmath19/vs at temperature @xmath20  mk .
devices were produced by standard gaas device processing methods and involved definition of a hall bar structure by wet etching , deposition and annealing of ohmic contacts and deposition of ti / au gates and interconnects .
insulated gate samples feature a @xmath21  nm al@xmath4o@xmath5 layer deposited using atomic layer deposition at @xmath22c after hall bar definition , with access for ohmic contacts provided using a buffered hf etch .
the polyimide insulated gate sample was produced using photo - processable polyimide ( hd microsystems ) deposited after the ohmic contact anneal .
sulfur passivation was performed immediately before gate deposition by @xmath23  min immersion in a @xmath24 dilution of stock ( nh@xmath6)@xmath4s@xmath7 solution prepared by adding @xmath25  g of elemental sulfur ( aldrich ) to @xmath26  ml of @xmath27 ( nh@xmath6)@xmath4s solution ( aldrich ) .
the passivation is performed at @xmath28c and care is taken to minimize air exposure between passivation and gate / interconnect deposition .
electrical measurements at @xmath29  k and @xmath30  k were obtained using a liquid helium dip - station and an oxford instruments heliox @xmath31he cryostat , respectively .
standard two- and four - terminal ac lock - in techniques were used to measure the conducting channel s drain current @xmath32 , typically with a @xmath33v constant voltage excitation at @xmath34  hz applied to the source .
the gate bias @xmath35 was applied using a keithley 2400 source - measure unit enabling continuous measurement of gate leakage current @xmath36 down to @xmath26  pa .
more complete details of heterostructure growth , device fabrication and electrical measurement are given in appendix a.
a common explanation for instability and gate hysteresis in schottky - gated p - type algaas / gaas heterostructures is charge leakage from the metal surface - gate into the heterostructure when the gate is positively biased to deplete the 2dhg .
this often relies on the argument that schottky gates on p - type heterostructures are inherently more leaky than on n - type heterostructures .
@xcite ref .
@xcite suggests this occurs because : ( a ) gaas surface states cause the surface fermi level to be pinned slightly closer to the valence band than the conduction band , making the schottky barrier lower for p - type heterostructures ,  @xcite and ( b ) depletion of the hole gas requires the schottky gates to be forward biased .
the latter argument is incorrect
depletion is a reverse bias process whether the underlying structure is n - type or p - type ; the bias convention is reversed under an inversion in doping type .
@xcite the former argument requires caution for two reasons .
firstly , in most heterostructures the gaas cap is intrinsic , and the dopants in the heterostructure , whether n- or p - type , are in the algaas layers more than @xmath12  nm beneath the surface .
hence the schottky barrier is the same for either doping type , suppressing any relative difference in gate leakage .
secondly , schottky barrier measurements are usually performed at @xmath20  k , where thermionic emission dominates any leakage current ,  @xcite whereas most quantum devices  @xcite are studied at @xmath37  k , where thermionic emission is quenched due to its exponential temperature dependence .
this should further suppress the leakage current difference between schottky gates on n- and p - type heterostructures .     on a log - axis vs gate bias @xmath35 for a schottky - gated modulation - doped p - type heterostructure . at positive @xmath35 ,
@xmath36 remains less than @xmath38  pa up to @xmath39  v , sufficient to achieve pinch - off for all uninsulated gate devices studied . in an n - type heterostructure ,
gate leakage would normally occur at @xmath40  v ( indicated by the arrow ) and is suppressed for negative @xmath35 .
( b ) channel current @xmath32 vs gate voltage @xmath35 at six different gate sweep rates for device a. the horizontal arrows indicate the direction of travel around the hysteresis loop.,width=302 ]    thus metal gates on p- and n - type heterostructures should behave similarly at low temperature aside from a sign - reversal in bias convention ( forward / reverse ) . to confirm this , fig .
1(a ) shows the gate leakage current @xmath36 versus gate bias @xmath35 for a schottky - gated p - type heterostructure ( this data is presented on a linear @xmath36 axis for comparison in appendix b ) .
the gate begins to pass significant current under forward bias conditions at @xmath41  v. under reverse bias , where 2dhg depletion occurs , the leakage current gradually rises as @xmath35 is made increasingly positive , with @xmath42  pa for the entire range @xmath43  v ; this is sufficient to achieve pinch - off in all of our uninsulated devices .
in contrast , a negative @xmath35 , i.e. , forward bias , produces strong gate leakage at @xmath44  v. the misconception that schottky gates on p - type algaas / gaas heterostructures leak at positive @xmath35 may arise from the knowledge that schottky gates on n - type algaas / gaas heterostructures leak for positive @xmath45  v ( indicated by the arrow in fig .
reverse bias leakage for n - type heterostructures usually does not occur until well beyond @xmath46  v , consistent with the reverse bias behavior for the p - type heterostructure in fig .
despite this , schottky gates on n - type algaas / gaas heterostructures leak relatively tiny amounts of charge under normal operation .
@xcite this was demonstrated by pioro - ladrire _ et al _ ,  @xcite using a device consisting of a small quantum dot , isolated from the adjacent 2deg , and coupled to a quantum point contact ( qpc ) charge sensor ( see fig .
7 of ref .
the qpc detects charge leaking from the schottky gates forming the dot , with extremely small leakage currents @xmath47  a observed .
these tiny currents are often associated with charge noise in n - type heterostructures ,  @xcite but are not commonly known to produce strong gate hysteresis in n - type heterostructures to the level seen in p - type devices ; the gates in electron devices are generally very stable ( see section iv - a ) . given this ,
it is not possible using fig .
1(a ) and the earlier discussion alone to definitively rule out gate leakage as a possible cause of gate hysteresis / instability in p - type heterostructures . the ultimate test , insulating the gates from the heterostructure , will be presented in section iii - c ; first we characterize the hysteresis we observe in schottky - gated 2dhgs .
device a has ti / au gates deposited directly on the surface of 1-h .
figure  1(b ) shows the measured drain current @xmath32 versus gate voltage @xmath35 from device a at six @xmath35 sweep rates between @xmath48 and @xmath49  mv / s .
hysteresis occurs for all @xmath35 , but is most prominent for @xmath50  v. note that @xmath32 reflects the channel conductivity , which can vary due to changes in either carrier density or mobility .
hall measurements with a small perpendicular magnetic field applied versus @xmath35 show a qualitatively identical hysteresis to that in fig .
1(b ) , confirming that changes in @xmath32 with @xmath35 are predominantly density related .
the direction of travel around the hysteresis loop ( indicated by horizontal arrows in fig .
1(b ) ) provides important clues about the origin of the hysteresis .
first , it allows the most obvious cause of apparent hysteresis : recording delay in the measurement apparatus ( sweep lag ) to be ruled out .
any delay on the upsweep to positive @xmath35 causes a given depletion to occur at a higher apparent @xmath35 , on the downsweep to @xmath51 , reaccumulation of carriers occurs at a lower apparent @xmath35 .
the net result is a clockwise hysteresis loop  the direction of travel in fig .
1(b ) is clearly counterclockwise .
another key characteristic of sweep lag is that the hysteresis is strongest where the derivative @xmath52 is greatest . in fig .
1(b ) the hysteresis is strongest where @xmath52 is the smallest ( see appendix c ) .
these two observations confirm that the hysteresis is not an instrumental issue ; it instead originates within the device .
the effect of gate leakage depends on where the charge leaks to . in an entirely dc measurement ,
charge leaking directly to the 2dhg would add / subtract from the channel current .
this would modify the @xmath32-@xmath35 characteristics but should not produce hysteresis .
here we measure @xmath32 using an ac lock - in technique ; any gate leakage direct to the 2dhg does not appear in the measured @xmath32 versus @xmath35 unless it is an ac current at the reference frequency .
an alternative is that charge leaks into trap states between the gate and 2dhg ; this will produce hysteresis if the trap time is not very small . because a positive @xmath35 is applied to the gates to deplete the 2dhg
, any charge leaking from the gate will be positive , and its closer proximity to the 2dhg will increase the depletion at a given @xmath35 on the downsweep . similarly , for a 2deg the leaked charge will be negative , and it will also increase depletion ; this is what produces the downward steps in the downsweep arm of the gate characteristics in fig .
7(a ) of ref .
returning our attention to holes , on the upsweep , reaccumulation in the 2dhg will be delayed by the need for the trapped positive charge to dissipate .
this produces a clockwise hysteresis loop for holes , opposite to that in fig .
1(b ) and consistent with our argument in section iii - c below that gate leakage does not cause the hysteresis
. note that gate leakage corresponds to an counterclockwise hysteresis loop for electrons due to the hysteresis loop mirroring about @xmath51 for carrier sign inversion ; this is exactly the loop direction obtained in fig .
7 of ref .
@xcite where gate leakage does cause the hysteresis .
the steps in ref .
@xcite arise from the high sensitivity of their measurement configuration , single / few trap resolution will not be observed in the large area gate devices studied here .
note that the hysteresis loop for the hole qpc in ref .
@xcite is counterclockwise , opposite the direction expected for hysteresis due to gate leakage .
we will present a possible explanation for the counterclockwise loop direction in section iii - d , first , we continue towards ruling out gate leakage as the cause of the hysteresis by looking at insulated - gate devices .     and
( b ) gate leakage current @xmath36 versus gate voltage @xmath35 at three different gate sweep rates for device b ( @xmath21  nm al@xmath4o@xmath5 layer on 1-h ) .
horizontal arrows indicate sweep direction . in ( b )
the left / right axis and lower / upper data are for the up / down sweep , respectively .
once @xmath36 reaches @xmath53a the gate voltage source implements current limiting , holding @xmath35 fixed .
hence for @xmath54  v the data in ( a ) should be considered as @xmath55 versus time @xmath56 at fixed @xmath35 , with each @xmath57  v minor tick in @xmath35 corresponding to @xmath11 , @xmath58 and @xmath21  s for sweep rates of @xmath59 , @xmath12 and @xmath49  mv / s , respectively.,width=302 ]      figure  2(a / b ) shows @xmath32 and @xmath36 versus @xmath35 for device b , with ti / au gates insulated by a @xmath21  nm al@xmath4o@xmath5 layer .
we would expect hysteresis to be heavily suppressed in this device if it is caused by gate leakage .
instead the hysteresis becomes stronger , and we need to drive @xmath35 to al@xmath4o@xmath5 insulator breakdown to even approach pinch - off .
a higher pinch - off voltage is expected ; device b has increased gate-2dhg separation and an extra dielectric layer .
we find a conversion factor @xmath60 relating the insulated and uninsulated gate biases @xmath61 and @xmath35 using a parallel - plate capacitor model , assuming gaas , algaas and al@xmath4o@xmath5 dielectric constants of @xmath62 , @xmath63 and @xmath64 , respectively .
it is clear from figs .
1(b ) and 2(a ) that the shift in pinch - off bias from @xmath65  v to @xmath66  v , i.e. , by a factor of @xmath67 , far exceeds that expected from simply adding @xmath21  nm of al@xmath4o@xmath5 .
to confirm that device b s large pinch - off voltage is not a fabrication problem , we measured a second device differing only in top - gate pattern / area ( see appendix d ) .
this gave similar behavior , with a large @xmath68  v required to achieve even modest depletion ( @xmath69 reduction in @xmath32 ) .
the features in figs .
1(b ) and 2(a ) are qualitatively identical , but we highlight two places where the quantitative differences are substantial .
firstly , the current plateau at intermediate @xmath35 is much longer for device b , delaying pinch - off accordingly .
this creates the illusion that the initial drop in @xmath32 in the upsweep is steeper ; the opposite is true with the initial drop in fig .
1(b ) complete by @xmath70  v whereas the same drop in @xmath32 takes @xmath71  v in fig .
secondly , there is a distinct asymmetry in the sweep - rate dependence of upsweeps and downsweeps : the upsweep path depends heavily on sweep - rate while the downsweep path is largely independent of sweep - rate .
this is also evident in fig .
1(b ) , but is heavily exacerbated by the al@xmath4o@xmath5 layer .
the insulator - semiconductor interface can have a radical effect on performance in devices with a shallow conducting channel .
@xcite oxide insulators are particularly troublesome due to high interface trap densities ; improvement is often obtained using polymeric insulators e.g. , polyimide .
@xcite to explore this we studied device c , which features gates insulated with @xmath72  nm of polyimide .
this gave qualitatively similar results to device b ( see appendix d ) .
pinch - off can not be achieved in device c either , largely due to the much lower breakdown voltage @xmath73  v for the polyimide layer . at breakdown , @xmath55 has only fallen by @xmath74 of its @xmath51 value .      a possible explanation for an counterclockwise hysteresis loop and its particular shape in fig .
1(b ) is the gradual population / depopulation of a layer of _ net _ negative charge between the gate and 2dhg ( n.b .
, the charge on the gate is positive , this can not be gate leakage ) .
on the upsweep , the positive @xmath35 places positive charge on the gate , and this ideally results in depletion of the 2dhg ( i.e. , reduced carrier density ) .
but , if adding positive charge to the gate instead results in net negative charge accumulation between gate and 2dhg , then depletion stalls , producing a reduced transconductance @xmath75 and perhaps even an @xmath32 plateau
. the link between a plateau in @xmath32 versus @xmath35 and stalling of 2dhg depletion was confirmed by a corresponding plateau in hall measurements of the 2dhg . if the capacity for net negative charge accumulation is finite , depletion eventually resumes , leading to pinch - off ( @xmath76 ) . on the downsweep
, positive charge is gradually removed from the gate , leading to 2dhg repopulation and loss of the accumulated net negative charge .
if the net negative charge is held in deep trapping sites , its loss may be very slow .
repopulation of the 2dhg will occur first , producing a rapid rise in @xmath32 to a level close to its initial value at @xmath51 , followed by a long current plateau extending to @xmath51 as the net negative charge is lost .
an immediately obvious mechanism is charge trapping by surface states ; it is well - known in both oxide - insulated iii - v fets  @xcite and organic semiconductor fets .
@xcite another possible mechanism is charge migration in the modulation - doping layer . here
the use of ` net ' charge accumulation is deliberate and important .
silicon donors in the al@xmath7ga@xmath77as modulation doping layer of an n - type heterostructure can take two different configurations : a shallow hydrogenic donor occupying a ga site , or for @xmath78 , a metastable donor where the si atom is displaced into an interstitial position along the @xmath79 direction by lattice distortion .
@xcite the dx centers act as deep traps ; when the device is cooled below @xmath80  k , the dx centers capture free electrons in the doping layer to become dx@xmath81 , locking some fraction of the remaining hydrogenic donors in a positive charge state .
this ` freezing ' dopant layer charge is vital to the stability and reproducibility of the electronic properties of devices based on si - doped n - type algaas / gaas heterostructures at low temperatures .
@xcite comparatively little is known about the defect physics of si dopants in ( 311)-oriented p - type algaas / gaas heterostructures .
in addition to acting as a simple substitutional acceptor by occupying an as site , si has also been suggested to form an acceptor complex / deep trap known as si - x .
@xcite initial studies  @xcite suggested that si - x consisted of a si@xmath82 acceptor adjacent to a ga site vacancy v@xmath83 ( subscript denotes site occupied ) .
raman and ir spectroscopy regarding the existence of si - x in heavily si - doped ( 311)a gaas layers is controversial , with data suggesting that it does  @xcite and does not  @xcite exist .
further work , suggested modified structures for si - x , first as a v@xmath83-si@xmath82-as@xmath83 complex ,  @xcite later ruled out in favor of a perturbed si@xmath83-v@xmath83 center .
@xcite these studies were all for gaas ; the existence and properties of si - x - like complexes in al@xmath84ga@xmath85as is unknown .
we comment further on possibilities for si acceptor complexes and deep traps in section vi .    returning to hysteresis mechanisms ,
if the dopant layer traps are shallow or thermal energy is sufficient for a high detrapping rate , charge can migrate in response to the balance of charge between the gate and 2dhg .
for example , when @xmath51 it is energetically more favorable for the 2dhg side of the doping layer to be net negative and the gate side net positive . at pinch - off , the positively charged gate and depleted 2dhg favour the opposite ( 2dhg side net positive / gate side net negative ) .
this gate - induced ` tidal flow ' of doping layer charge is equivalent to negative charge accumulation between gate and 2dhg towards generating an counterclockwise hysteresis loop , as demonstrated in section v.
to better understand the comparative behavior of devices a and b , we prepared devices d and e on 1-e : device d has no al@xmath4o@xmath5 layer , device e has a @xmath21  nm al@xmath4o@xmath5 layer grown simultaneously with that in device b. figures  3(a / b ) present the electrical characteristics for devices d and e. in each case the apparent hysteresis is minimal and the loop direction is consistent with sweep lag ( n.b . ,
reflection of gate characteristics about @xmath51 due to sign - inversion reverses loop direction  for electrons sweep lag goes counterclockwise ) . on its own ,
the lack of device - induced hysteresis in devices d and e does not allow us to pinpoint the origin of the hysteresis solely to surface - states or charge migration , as the shift from 1-h to 1-e entails a change in both the surface orientation and the dopant physics . while the ( 100 ) gaas surface consists only of double - dangling bonds , the ( 311 ) surface contains equal densities of single- and double - dangling bonds .
@xcite     vs gate voltage @xmath35 for devices ( a ) without ( device d ) and ( b ) with a @xmath21  nm al@xmath4o@xmath5 gate insulator ( device e ) on 1-e .
the inset to ( b ) shows a close up of the data in the main panel to highlight the hysteresis .
the arrows indicate hysteresis loop direction .
the purple dot - dashed lines are guides to the eye highlighting the low - bias non - linearity.,width=302 ]    figure  3 has two notable features : the first is pinch - off bias , which increases from @xmath86  v to @xmath87  v upon addition of the al@xmath4o@xmath5 layer .
this @xmath88 increase in pinch - off bias is less than the @xmath89 found for holes , but more than double the @xmath90 expected from a parallel - plate capacitor model .
the second feature is the distinct non - linearity in @xmath32 versus @xmath35 at low bias in device e. although this low bias behavior in fig .
3(b ) looks different to that in fig .
2(a ) , in both cases it represents a reduced depletion rate for a given change in gate bias , and may have similar origin . a comparison of figs .
3(a ) and ( b ) suggests the low - bias non - linearity arises from the al@xmath4o@xmath5 layer ; we believe it is caused by competition between the filling of surface states and 2deg depletion .
this hypothesis is further supported by extrapolating the linear trend at moderate @xmath35 to lower @xmath35 , as per the purple dot - dash lines in fig .
3(a / b ) .
the vertical purple arrows indicate where the low - bias non - linearity ends ; @xmath91  v and @xmath92  v to the right of pinch - off in fig .
3(a ) and ( b ) , respectively .
the latter is @xmath93 the former , very close to the @xmath90 expected with the al@xmath4o@xmath5 layer .
the @xmath94 difference between the actual value of @xmath92  v for device e and the expected value of @xmath95  v is well explained by the @xmath94 difference in measured @xmath51 carrier density between devices d and e. the findings above suggest that most 2deg depletion occurs in the linear region in fig .
3(a / b ) , with surface - state filling dominant for @xmath96  v in device d and @xmath97  v in device e. another way to envision this is as threshold voltage shift induced by the surface - states ; as per oxide - insulated iii - v fets  @xcite and organic semiconductor fets .
@xcite a final point of note is that the data in fig .
3(a ) is not linear all the way to @xmath51 .
this suggests surface - states have a measurable impact on schottky - gated devices also .
this is not surprising ; one naturally expects a finite surface - state density for uninsulated gaas surfaces also .
one approach to reducing the surface - state density is chemical passivation , the aim being to remove the native oxide and covalently satisfy all of the ga- and as- dangling bonds .
this ideally shifts the surface - states out of the band - gap and into the valence or conduction bands .
@xcite passivation is commonly achieved using aqueous and alcoholic chalcogenide solutions , particularly those containing sulfur e.g. , na@xmath4s  @xcite or ( nh@xmath6)@xmath4s .  @xcite a comprehensive review of chemical passivation of iii - v surfaces is provided by lebedev .
@xcite     vs gate voltage @xmath35 for ( a ) device f on 1-h and ( b ) device g on 1-h with sulfur passivation .
the data in ( a ) is what we typically obtain with sulfur passivation , even with different treatments .
@xcite the data in ( b ) is a repeatable measurement , but to date , a non - reproducible device .
we are still working to establish reliable conditions that produce this outcome .
the solid black and dashed blue traces were obtained at sweep rates of @xmath49 and @xmath59  mv / s .
the arrows indicate hysteresis loop direction.,width=302 ]    the best approach to sulfur passivation involves difficult decisions amongst competing benefits .
for example , while na@xmath4s treatment produces a surface passivation that is more robust to light / oxygen than ( nh@xmath6)@xmath4s treatment ,  @xcite the latter produces surfaces with less o , more s and no traces of na .
@xcite alcoholic solutions
are more effective than aqueous solutions ,  @xcite but alcoholic solutions are incompatible with photolithography resist , making them difficult it implement with patterned gates .  @xcite the passivation treatment used here results from an extended study of different approaches to sulfur passivation of patterned - gate hole devices that will be reported elsewhere .
@xcite    figure  4(a / b ) shows gate hysteresis data from passivated devices on 1-h ( device f / g ) .
we usually obtain data like that in fig .
4(a ) on including sulfur passivation in the fabrication process ; pinch - off voltages between @xmath98 and @xmath99  v are typically obtained depending on the treatment formulation
.  @xcite the device g data in fig .
4(b ) represents an isolated instance where elimination of the current plateaus and a much lower pinch - off voltage @xmath100  v was observed .
note that a small counterclockwise hysteresis loop remains , consistent with that obtained when we examine the hysteresis generated by charge reorganization in the dopant layer in section v. it is also consistent with the hysteresis we observe at @xmath101  mk and the data in ref .
caution is needed with fig .
4(b ) because although the measurement itself is repeatable , i.e. , if we remeasure this device we get the same result , after several months work we are unable to produce another device showing the same behavior .
the loss of the current plateaus in fig .
4(b ) bears further discussion . comparing with fig .
4(a ) and earlier data , device g pinch - off occurs before the current plateau normally begins .
the initial depletion is very strong compared to the other devices ; by @xmath102  v the current has dropped to zero as opposed to the @xmath103 found in other devices without the @xmath51 conductivity being significantly less than normal .
the very similar @xmath32 at @xmath104 for devices f and g shows that the radically different pinch - off voltages are not due to a correspondingly large difference in @xmath105 carrier density . although the rapid initial depletion in device g shows a strong reduction in the effect of the surface states on @xmath32 versus @xmath35 , it is unclear this requires a major change in the surface state spectrum .
a reduction in surface state density in the tail of the distribution causing the current plateau may suffice to ensure that depletion is completed before current plateau onset , giving the radical difference in pinch - off voltage between devices f and g.    putting device g aside momentarily , our work suggests that passivation does little to reduce the hysteresis .
@xcite an apparent initial explanation is that the passivation solution is ineffective on ( 311 ) surfaces  there are no prior studies on this gaas surface , development has focussed on the more commonly used ( 100 ) , ( 110 ) and ( 111 ) surfaces .
@xcite we have performed comparative studies of the efficacy of sulfur passivation on ( 100 ) and ( 311 ) gaas surfaces using photoluminescence measurements ,  @xcite and find similar improvement in photoluminescence yield for both surfaces .
@xcite thus , while it is evident that passivation significantly affects the surface states , as expected from earlier work ,  @xcite this does not translate into a substantial change in the observed hysteresis .
a possible explanation is that the single - dangling bonds present on the ( 311 ) surface interrupt the surface chemistry , reducing passivation treatment effectiveness .
the importance of dangling - bond presentation to surface chemistry is well known ; for example , it affects the incorporation probability of si into al / ga sites versus as sites during growth .
@xcite xps studies show that ammonium sulfide treatment of ( 100 ) gaas surfaces leads to disulfide bridges between adjacent surface as atoms .
@xcite it would be interesting to investigate whether this changes for the ( 311 ) surface ; the corresponding effect on surface - state spectrum could be established using deep level transient spectroscopy ( dlts ) .
@xcite a focused surface chemistry study may ultimately reveal a passivation formulation that produces the improvement found for device g consistently .
device g shows that passivation does not eliminate the hysteresis entirely and that surface - states are not the whole story .
there is additional data supporting this , for example : the addition of the al@xmath4o@xmath5 layer to a ( 100)-oriented n - type heterostructure ( fig .
3 ) causes a threshold shift consistent with a large change in surface - state spectrum but does not introduce hysteresis ; yet hysteresis is reported for ( 100)-oriented p - type heterostructures  @xcite with a loop direction ( counterclockwise ) consistent with our observations .
these results suggest that dopants also play a role in the hysteresis ; we now explore this possibility .
the key to the remarkable stability and performance of n - type algaas / gaas heterostructures is the dx center , a deep trap consisting of a lattice - distorted si@xmath83 site .
@xcite if an n - type heterostructure is warmed above @xmath80  k , the dx centers begin releasing their electrons allowing the doping layer charge distribution to change .
@xcite this provides an ideal system for studying whether charge motion in the doping layer generates hysteresis similar to that observed for p - type heterostructures .
gate hysteresis data from device d at @xmath106 and @xmath9  k is shown in figure  5(a / b ) .
the @xmath107  k data looks like an intermediate between that in fig .
3(a ) and fig .
3(b ) ; the pinch - off voltage is slightly higher ( @xmath108  v rather than @xmath109  v ) due to the increased temperature . while the apparent hysteresis in fig .
3 runs counterclockwise , indicative of sweep - lag , the hysteresis in fig .
5(a ) runs clockwise , the direction corresponding to that observed in p - type heterostructures .
the hysteresis becomes more pronounced at @xmath9  k and its shape is interesting . as fig .
5(c ) illustrates , if one takes the characteristic shape obtained for holes , e.g. , fig .
1(b ) , removes the current plateaus ( green dotted segments ) , closes the gap and mirrors about @xmath51 to account for carrier charge inversion , then a hysteresis loop with the same shape as that in fig .
5(a ) is obtained .
the loss of the current plateaus is consistent with the lack of hysteresis in fig .
3(a / b ) .
this suggests the current plateaus are specific to holes , and likely a surface - state effect , consistent with figs .  2 and 4(b ) . a notable feature of fig .
5(a ) is that the slow cycle ( dashed blue trace ) has a much higher pinch - off voltage than the fast cycle ( solid black trace ) ; this also occurs for p - type heterostructures at @xmath110  k , as discussed below .
vs gate voltage @xmath35 for device c on 1-e without al@xmath4o@xmath5 at @xmath111 ( a ) @xmath9  k and ( b ) @xmath107  k. ( c ) a schematic illustrating an evident relationship between the hysteresis loop shape in hole ( left ) and electron devices ( right ) , as discussed in the text .
( d - g ) @xmath55 vs @xmath35 for device d on 1-e with a @xmath21  nm al@xmath4o@xmath5 layer at @xmath112 ( d ) @xmath72  k , ( e ) @xmath9  k , ( f ) @xmath107  k , and ( g ) @xmath113  k. in ( a , b , d - g ) the solid black and dashed blue traces were obtained at sweep rates of @xmath49 and @xmath59  mv / s .
the arrows indicate hysteresis loop direction .
, width=302 ]    unfortunately , the gates in device d begin to leak directly to the 2deg for @xmath114  k , preventing higher temperature measurements . to go higher in @xmath115 and further explore this behavior
, we performed the same study using device e ( fig .
5(d - g ) ) .
starting at @xmath116  k , no hysteresis appears ; the data resembles that in fig .
3(b ) from device d , albeit with a slightly higher pinch - off voltage . as @xmath115
is increased very similar hysteresis to that in device d emerges for @xmath117  k. the pinch - off voltage increases markedly with @xmath115 , this limited the measurements to @xmath118  k. beyond this , the pinch - off voltage exceeds al@xmath4o@xmath5 layer breakdown causing gate leakage .
device e gives similar results to device d , both in terms of the overall hysteresis loop shape and direction of travel , and the trend for higher pinch - off voltage at lower sweep - rate .     versus gate voltage @xmath35 for device
f on 2-h without al@xmath4o@xmath5 at @xmath119 ( a ) @xmath120  k and ( b ) @xmath121  k , ( c ) @xmath122  k , ( d ) @xmath123  k , ( e ) @xmath124  mk , ( f ) @xmath125  mk , ( g ) @xmath126  mk and ( h ) @xmath127  k. ( i ) @xmath32 versus @xmath35 for device h on the @xmath13-doped heterostructure 3-h without al@xmath4o@xmath5/passivation at @xmath37  k. the solid black and dashed blue traces were obtained at sweep rates of @xmath49 and @xmath59  mv / s .
the arrows indicate hysteresis loop direction.,width=302 ]    in fig .
6(a - h ) we show the corresponding behavior for holes .
as @xmath115 is reduced from @xmath128  k to @xmath129  mk , two obvious changes result : first , the current plateau shortens and drops to lower @xmath32 .
the plateau shortening and lowering are linked  if plateau onset shifts to higher @xmath35 then the low @xmath35 depletion proceeds further before the plateau appears .
second , for @xmath130  k the pinch - off voltage for the slow trace significantly exceeds that for the fast trace .
a careful inspection of figs .
6(c - e ) reveals that this caused by loss of the fast trace current plateau , while the slow trace current plateau remains until @xmath131  mk . for the fast trace hysteresis loop at @xmath130  k , the hysteresis remains despite the loss of the current plateau and strongly resembles that in fig .  5 and 4(b ) .
this behavior clearly indicates that two processes are involved in generating the hysteresis  surface - state trapping and charge redistribution amongst the dopants  each with different time and energy scales . attributing the current plateau to surface state trapping
, it appears that the surface - states ` freeze out ' at @xmath110  k leaving the dopant effects behind .
this might explain the lack of hysteresis in the hfo@xmath4-insulated hole qpc studied by csontos _
@xcite compared to our al@xmath4o@xmath5 device ( fig .
the data shown in fig .
3(a ) of ref .
@xcite was obtained at @xmath132  mk ; here the surface - state component of the hysteresis is likely quenched leaving only the hysteresis due to charge migration in the doping layer .
this is why the hysteresis occurs primarily closer to pinch - off , consistent with fig .
4(b ) where surface - state hysteresis also appears to be quenched . the hysteresis loop direction in ref .
@xcite is consistent with this explanation ; data at higher @xmath115 for this device would be enlightening . to further demonstrate the influence of dopants in the hysteresis we discuss one final device . in figure  6(i ) we present hysteresis data from device h , made on the @xmath13-doped heterostructure 3-h with schottky - gates on an unpassivated surface .
the key difference is that the dopants only have a vertical spread @xmath133  nm in device h , compared to @xmath134  nm for devices a - g .
the 2dhg is closer to the surface ( @xmath135  nm for 3-h versus @xmath107  nm for 1-h ) and the @xmath12  nm gaas cap in 3-h is si doped unlike heterostructures 1 and 2 .
doping of the cap is normally performed to improve ohmic contact formation ; however , the doping level is necessarily limited to prevent shorting of gates and ohmic contacts . comparing fig .
6(i ) with fig .
5(a / b ) there are two notable differences . first and foremost
, the hysteresis loop s vertical extent is reduced from @xmath136 to @xmath137 .
this reduction is likely due to the @xmath138-fold reduction in dopant layer spread for device h. second , the pinch - off voltage and width of the current plateau are increased .
a cap doping of @xmath139  @xmath140 corresponds to replacing only roughly 1 in every @xmath141 surface atoms with si .
considered alongside the sulfur passivation results , the cap doping is unlikely to be the dominant cause for the increase in current plateau width .
it is more likely that the shallower 2dhg in 3-h exacerbates the surface - state contribution to the hysteresis .
this would be consistent with scattering studies in shallow undoped n - type heterostructures where the surface - charge scattering contribution increased with reduced 2deg depth .
we set out to identify the exact origin of the gate hysteresis in p - type algaas / gaas heterostructures
several divergent explanations exist in the literature and a better understanding will enable development of low - dimensional hole devices with improved stability / performance .
a commonly accepted explanation is that gates on p - type heterostructures are inherently leaky .
we show that this not the case ; schottky gates on p - type heterostructures are not significantly more leaky than schottky gates on n - type heterostructures under reverse bias conditions .
hysteresis due to gate leakage in p - type heterostructures should give a clockwise hysteresis loop and the hysteresis we observe runs counterclockwise .
we also find that the hysteresis becomes drastically worse rather than much better if the gates are insulated .
we note that hysteresis was also still observed in qpcs with hfo@xmath4-insulated gates on c - doped p - type heterostructures ,  @xcite despite these producing improved tunability compared to equivalent schottky - gated devices .
the direction of the hysteresis loop in ref .
@xcite is counterclockwise and is inconsistent with gate leakage . the measurements by csontos _
et al _ were obtained at very low temperature @xmath142  mk and based on our data , we propose that this hysteresis may be due to charge redistribution in the dopant layer .
our work focussed on the investigation of devices with insulated / uninsulated gates on custom - grown , matched electron and hole heterostructures .
this relies on si being an n - type dopant on ( 100 ) substrates and a p - type dopant on ( 311)a substrates .
@xcite despite the strong hysteresis in p - type devices at @xmath37  k , we observe no hysteresis in n - type devices until the temperature exceeds @xmath106  k , where the si dx centers in the n - type heterostructure begin to detrap and migration of charge within the doping layer occurs .
@xcite the hysteresis that emerges at @xmath143  k for electrons bears a strong resemblance to that in holes at lower temperatures , particularly at @xmath110  k , where the current plateau at intermediate @xmath35 drops to @xmath144 and is quenched .
this correspondence , and the lack of hysteresis for electrons at @xmath145  k , strongly suggests that surface states are not the sole cause of the hysteresis ; migration of charge in the dopant layer is likely involved as well .
we return to surface states following a discussion of dopants .    comparatively little
is known about the physics of si acceptors in ( 311)a heterostructures .
although si clearly acts as a substitutional acceptor , the presence and properties of acceptor complexes such as si - x is debated .
@xcite our data can not provide insight at the atomic level , but there are clearly no acceptor sites in a p - type heterostructure s doping layer that act like the deep - trapping dx centers in n - type heterostructures . regarding si - x specifically , we can draw two conclusions : if si - x exists in al@xmath84ga@xmath85as in ( 311)a heterostructures , then it must be a very shallow trap ( more than 100 times shallower than dx ) if present at high density , and only a deep - trap if it is present at such low density that it can not ` freeze ' the doping layer s charge configuration . while the lack of dx - like deep traps answers the obvious question of why p - type heterostructures are so unstable / hysteretic under gating
, it is interesting to invert the thinking and consider instead why n - type heterostructures are often so impressively stable .
the answer is clear  the deep - trapping dx centers ` lock down ' the vast majority of free charge in the dopant layer  but inspirational : one way to stabilize modulation - doped p - type heterostructures may be to deliberately poison the modulation doping layer with deep trapping sites , perhaps by engineering the growth conditions to obtain a high density of deep - trapping si acceptor complexes , or failing that , by co - doping with transition metal impurities , e.g. , cu , fe , ni or zn .
@xcite cu is probably more optimal than fe or ni , which may bring magnetic side - effects , and zn , which is a rapid diffuser in gaas and may be incompatible with ohmic contact formation .
the changes in hysteresis obtained by changing insulator composition or surface passivation are small compared to the differences arising between the presence / absence of a gate insulator .
one possible explanation is that the metal / gaas interface quenches the surface - state density , either chemically by forming ti - o - ga or ti - o - as bonds ( or ti - s - ga or ti - s - as bonds ) , or physically by providing a nearby high electron density that partially screens the surface states .
@xcite this is in the same spirit as the addition of a doping layer to compensate the surface - states in ultra - high mobility n - type algaas / gaas heterostructures .
@xcite this idea could be applied here with the lightly - doped cap in 3-h replaced by adding a uniformly doped layer between the cap and modulation - doping for surface - state compensation .
another alternative is to abandon schottky - gates and use a degenerately - doped cap as a semiconductor gate .
@xcite this effectively places the gate underneath the semiconductor surface , enabling the gate to screen the 2dhg from the surface - states . indeed , this explains the high stability and lack of hysteresis in undoped p - type semiconductor - insulator - semiconductor field - effect transistor ( sisfet ) devices .
@xcite there both hysteresis contributions are dealt with  the modulation doping is removed and the gate screens the surface - states .
given the success of undoped sisfets , one might ask : why bother making semiconductor - gated modulation - doped devices ?
in undoped sisfets it is essential that the gate overlaps the ohmic contacts ; this makes fabrication more difficult and lowers yield .
@xcite this overlap is unnecessary in modulation - doped devices .
hence , if the doping layer charge migration issue described earlier can be successfully overcome , modulation - doped semiconductor - gated structures may provide a formidable platform for studying low - dimensional hole devices .
this work was funded by australian research council grants dp0772946 , dp0877208 , ft0990285 and ft110100072 .
dr and adw acknowledge support from dft spp1285 and bmbf quahl - rep 01bq1035 .
this work was performed in part using the nsw and act nodes of the australian national fabrication facility ( anff ) .
we thank l. eaves for helpful discussions on dx centers , and l.h . ho for the initial measurements that motivated our interest in this problem .
@xmath146 : dw and dc contributed equally to the work .
experiments were performed on five separate algaas / gaas heterostructures grown by molecular beam epitaxy ( mbe ) , denoted 1-e , 1-h , 2-e , 2-h and 3-h .
the first four were produced in two separate growth runs , each performed onto side - by - side halves of 2 " diameter semi - insulating gaas substrate , one ( 100)-oriented and the other ( 311)-oriented , to give ` matched ' electron ( -e ) and hole ( -h ) heterostructures , respectively .
production of electron and hole heterostructures in a single growth is enabled by the facet - specific amphoteric nature of si dopants in algaas ( n - type on ( 100 ) and p - type on ( 311 ) )  @xcite .
both growth runs have a nominally identical epilayer structure , the active region consisting of @xmath147  nm undoped gaas , @xmath14  nm undoped al@xmath148ga@xmath149as , @xmath11  nm si - doped al@xmath148ga@xmath149as and a @xmath12  nm undoped gaas cap . the @xmath13-doped wafer 3-h begins with @xmath150  nm undoped gaas and @xmath15  nm undoped al@xmath84ga@xmath85as grown at @xmath151c .
growth is then interrupted and the substrate cooled to @xmath152c .
the si source is opened for @xmath153  s and then @xmath12  nm of undoped al@xmath84ga@xmath85as is grown .
growth is interrupted again to return the substrate to @xmath151c before finishing the device with @xmath154  nm of undoped al@xmath84ga@xmath85as and a @xmath12  nm gaas cap .
the devices have typical carrier densities @xmath155  @xmath17 and mobilities @xmath18  @xmath19/vs at temperature @xmath37  k ; see table i for specific values for each heterostructure at @xmath20  mk using four - terminal shubnikov - de haas and hall resistivity measurements .
all measurements were performed in the dark .
details for each of the eight devices studied are presented in table ii .
[ cols="^,^,^,^,^",options="header " , ]     hall bars with a @xmath72  nm high mesa were produced using photolithography and a @xmath156 buffered hf : h@xmath4o@xmath4:h@xmath4o wet etch .
the buffered hf solution is @xmath157  nh@xmath6f : hf .
the photolithographically defined ohmic contacts consist of @xmath158  nm aube alloy for p - type contacts and a stack containing @xmath12  nm ni , @xmath14  nm ge , @xmath159  nm au , @xmath160  nm ni and @xmath38  nm au for n - type contacts .
contacts were annealed at @xmath161c for @xmath162  s ( p - type ) and @xmath163c for @xmath164  s ( n - type ) .
the photolithographically defined gates consist of @xmath21  nm ti and @xmath26  nm au deposited after the ohmic contact anneal .
figure  7(a ) shows an optical micrograph of a completed device .
ohmic contacts ( three at each end and four near the middle ) and a single top - gate covering the midsection of the hall bar with interconnects at top and bottom .
the remaining four metal gates were not used .
( b ) nomarski phase - contrast optical micrograph showing four etched penetrations ( off - white ) in the @xmath21  nm al@xmath4o@xmath5 layer ( pink ) obtained using a buffered hf etch .
these correspond to the four central ohmic contacts in ( a ) .
( c ) scanning electron micrograph of the etch penetration ( dark ) in the al@xmath4o@xmath5 layer ( light ) for the ohmic contact at the far right of the hall bar in ( a ) .
( b ) and ( c ) were obtained after the buffered hf etch and before ohmic metallization.,width=226 ]    al@xmath4o@xmath5 insulated gate samples were produced by adding the following steps between mesa etch and ohmic contact metallization . a @xmath21
nm al@xmath4o@xmath5 layer was deposited using ( ch@xmath5)@xmath5al and h@xmath4o gaseous precursors at @xmath22c in a cambridge nanotech savannah @xmath26 atomic layer deposition ( ald ) system .
access to the heterostructure for the ohmic contacts was obtained by a @xmath165  s buffered hf etch ( @xmath157  nh@xmath6f : hf in h@xmath4o ) following photolithographic definition of the contact regions and prior to metallization . in the absence of h@xmath4o@xmath4 this etch self - terminates , stripping the native gaas surface oxide in the process .
the openings in the al@xmath4o@xmath5 layer are visible optically ( fig .
7(b ) ) , but are clearer using scanning electron microscopy ( fig .
although traces of residual oxide remain , they do not adversely affect ohmic contact formation .
the polyimide insulated gate sample was produced with an added step between the ohmic contact anneal and gate deposition .
a @xmath72  nm layer of patterned polyimide is obtained by spin - coating a diluted mixture ( 1:1.4 ) of photo - processable polyimide ( hd microsystems hd-4104 ) in thinner ( hd microsystems t-9039 ) , performing a @xmath166c soft - bake for @xmath162  s , exposing / developing aligned ohmic contact openings , and finishing with a @xmath167c hard - bake for @xmath165  min under @xmath168  atm n@xmath4 .
the sulfur passivation treatment was performed immediately before gate deposition . a stock solution of ( nh@xmath6)@xmath4s@xmath7 was prepared by adding @xmath25  g of elemental sulfur ( aldrich ) to @xmath26  ml of @xmath27 ( nh@xmath6)@xmath4s solution ( aldrich ) and mixing until completely dissolved .
the passivation solution was a @xmath24 dilution of the stock solution in deionized water ( millipore ) .
passivation was performed by immersion for @xmath23  min in @xmath169  ml of passivation solution heated to @xmath28c in a water bath , followed by a deionized water rinse .
the sample is stored under deionized water during transfer to the vacuum evaporator .
the total time between passivation and sample at vacuum was @xmath170  min , with the sample exposed to air for no longer than a few minutes during evaporator loading and pump - down .
electrical measurements at @xmath29  k were obtained using a liquid helium dip - station , with @xmath171  k achieved using the natural stratification of the he atmosphere inside the dewar .
data at @xmath172  k was obtained using an oxford instruments heliox @xmath31he cryostat .
standard two- and four - terminal ac lock - in techniques were used to measure the conducting channel s drain current @xmath32 , typically with a @xmath33v constant voltage excitation at @xmath34  hz applied to the source .
pinch - off ( i.e. , @xmath76 ) is interpreted as @xmath173  pa ; this triggers the software to commence the downsweep to avoid pointlessly driving the device beyond pinch - off .
the gate bias @xmath35 was applied using a keithley 2400 source - measure unit enabling continuous measurement of gate leakage current @xmath36 down to @xmath26  pa .
this instrument has a built - in current limiter , with @xmath35 curtailed to keep @xmath36 at a specified limit even if a higher @xmath35 if requested .
on a linear axis vs gate bias @xmath35 for a schottky - gated modulation - doped p - type heterostructure .
the data matches that shown in fig .
1(a ) . at positive @xmath35 ,
@xmath36 remains less than @xmath38  pa to @xmath174  v , sufficient to achieve pinch - off for all uninsulated gate devices studied . in an n - type heterostructure ,
gate leakage would normally occur at @xmath175  v ( indicated by the arrow ) and is suppressed for negative @xmath35.,width=302 ]    figure  8 shows the data in fig .
1(a ) plotted on a linear - linear scale for comparison . the
gate leakage current @xmath36 is @xmath176  pa for the entire range @xmath177  v.
and ( b ) the numerical transconductance @xmath178 for the upsweeps vs gate voltage @xmath35 . the traces in ( b )
are sequentially offset vertically by @xmath179 with increasing sweep rate for clarity.,width=302 ]    figure  9 shows the vertical extent of the hysteresis loop and the slope of the upsweeps versus @xmath35 .
the slope curves for the down sweeps are very similar to those in fig .
9 except there is less structure at low @xmath35 and the peak at higher @xmath35 is sharper and shifted to more positive @xmath35 .
if the hysteresis is caused by sweep lag , one would expect the maximum vertical extent in the hysteresis to coincide in @xmath35 with the maximum slope @xmath178 .
this is clearly not the case , supporting our assessment that the hysteresis is not caused by sweep lag .
vs gate voltage @xmath35 for 22 hysteresis loop sweeps of device b2 .
the first sweep is show in blue , the @xmath23nd to @xmath180nd sweeps evolve continuously in color from green to magenta .
the sweep rate in each case is @xmath12  mv / s .
the points of discontinuity at high @xmath35 are where gate voltage current limiting comes on / off for the up / downsweep.,width=302 ]    figure  10 shows hysteresis loop data for device b2 , which is nominally identical to device b aside from a change in the gate design used .
the gate in device b2 covers less area . in both cases the gate does not extend to the edges of the al@xmath4o@xmath5 layer ; hence in neither case is leakage by proximal direct shorting between gate and ohmic contact .
the characteristics are very similar to those in device b , and the breakdown voltage is of a similar magnitude @xmath181  v. repeated sweeps appear to increase the breakdown voltage , enabling the device to slowly progress towards pinch - off .
the exact cause for this is unclear .     and ( b ) gate leakage current @xmath36 vs gate voltage @xmath35 at two different gate sweep rates for a device c featuring a @xmath72  nm polyimide layer on 2-h .
the horizontal arrows indicate the direction of travel around the hysteresis loop . in ( b )
the left / right axis and lower / upper set of data are for the sweep to / from positive @xmath35 , respectively .
note that once @xmath36 reaches @xmath38  na the gate voltage source implements current limiting by holding @xmath35 fixed .
hence for @xmath182  v the data in ( a ) should be considered as @xmath55 versus time @xmath56 at fixed @xmath35 . to aid in converting the data at @xmath182  v into time , each @xmath57  v minor tick in the figure corresponds to @xmath58 and @xmath21  s for sweep rates of @xmath12 and @xmath49  mv / s , respectively.,width=302 ]    the radical effect that the composition and properties of the insulator - semiconductor interface can have on transistor performance is well - known for organic fets .
@xcite due to high interface - state densities , inorganic oxide insulators are particularly troublesome , causing significant hysteresis and shifts in threshold voltage .
polymeric insulators such as polyimide often bring significant improvement . to explore whether the current plateau and difficulty in attaining pinch - off in device b is tied to insulator composition we studied device c containing gates insulated with a @xmath72  nm thick polyimide layer on 2-h .
figures  11(a / b ) show @xmath55 and @xmath36 versus @xmath35 for this device .
pinch - off can not be achieved in device c , largely due to the much lower breakdown field for the polyimide insulator .
breakdown occurs for @xmath73  v , and once @xmath36 reaches @xmath38  na at @xmath183  v the voltage source holds the gate bias fixed , as in fig .  2 .
thus the data at @xmath184  v in fig .
11(a ) should instead be considered as @xmath55 versus time @xmath56 at constant @xmath35 . here
each minor sub - tick corresponds to a time of @xmath49  s for the @xmath49  mv / s trace and @xmath21  s for the @xmath12  mv / s trace .
we show the data obtained beyond pinch - off in fig .
11 to better facilitate comparison with fig .  2 , and to highlight the equilibration behavior that occurs when
a sweep is stopped . the @xmath55 versus @xmath35 characteristics for device
c bear a striking resemblance to those of device b ( figs .  2 and 10 ) .
on the upsweep there is an initial drop in current that plateaus for intermediate @xmath35 , followed by a recovery in @xmath55 when @xmath35 is held constant .
this is consistent with slow accumulation of net negative charge between the gate and 2dhg , as per the explanation for hysteresis loop shape / direction in section iii - d .
the downsweep gives an initial rapid rise in @xmath55 that plateaus as @xmath35 approaches zero again , and as in fig .
2 , there is a distinct asymmetry between the upsweeps and downsweeps regarding the dependence of the path taken on sweep rate .
pinch - off occurs beyond @xmath183  v , thus the shift in pinch - off bias must exceed @xmath185 .
the capacitive conversion factor for this device @xmath186 assuming @xmath72  nm of polyimide with dielectric constant @xmath187 , giving an anticipated pinch - off voltage @xmath188  v.                                                                              b.c .
scannell , i. pilgrim , a.m. see , r.d .
montgomery , p.k .
morse , m.s .
fairbanks , c.a .
marlow , h. linke , i. farrer , d.a .
ritchie , a.r .
hamilton , a.p .
micolich , l. eaves and r.p .
taylor , phys .
b * 85 * , 195319 ( 2012 ) .
a.m. see , i. pilgrim , b.c .
scannell , r.d .
montgomery , o. klochan , a.m. burke , m. aagesen , p.e .
lindelof , i. farrer , d.a .
ritchie , r.p .
taylor , a.r .
hamilton and a.p .
micolich , phys .
lett . * 108 * , 196807 ( 2012 ) .