the resonant excitation by coherent optical radiation of an electronic transition in a semiconductor , e.g. a valence- to conduction - band excitation , creates a quantum - mechanical coherent superposition of the initial and final states of the transition , called optical polarization .
the non - linear optical properties of this coherent superposition , together with its time evolution , can be used to provide a sensitive measurement of many fundamental parameters of the semiconductor material @xcite including elastic and inelastic scattering , energy level splittings between nearly degenerate states , energy relaxation , as well as associated information such as land g - factors and band - mixing .    in general
, non - linear laser spectroscopy is a very established and well understood means to probe these phenomena @xcite .
however , the description of the non - linear optical response of a semiconductor crystal can be considerably more complex than for simple isolated and non - interacting atoms @xcite .
this is particularly true for the case of the ultrafast optical spectroscopy used for the study of the sub - picosecond dynamics of photoexcited carriers in bulk systems as well as in semiconductor heterostructures @xcite .
the life - time of the coherent quantum - mechanical superposition generated by an ultrafast laser excitation , called `` dephasing time '' , determines the typical time - scale on which coherent phenomena can be observed .
such dephasing time reflects the role played by the various `` incoherent '' , i.e. phase - breaking , mechanisms in destroying the phase coherence induced by the laser photoexcitation .
since semiconductors are characterized by very short electron - hole dephasing times , of the order of few hundreds of femtoseconds @xcite , coherent phenomena manifest themselves only through ultrafast optical experiments with sub - picosecond time resolutions @xcite . on this time - scale , the ultrafast evolution of photoexcited electron - hole pairs will reflect the strong coupling between coherent and incoherent dynamics , thus providing invaluable information on the non - equilibrium relaxation processes occurring in the semiconductor , e.g. carrier - carrier and carrier - phonon scattering .
the aim of this paper is to review the basic aspects related to coherent phenomena in semiconductors .
in particular , we will focus on the ultrafast coherent vs. incoherent carrier dynamics as well as on coulomb - correlation effects in photoexcited semiconductors .
the paper is organized as follows . in the remainder of this section , after a brief historical account of coherent experiments in solids , we will try to gain more insight into the concept of coherence by introducing a simplified description of the light - matter interaction in terms of a two - level model . in section [ s.tb ]
we will discuss the theoretical approach commonly used for a realistic description of both coherent and incoherent phenomena in various semiconductor structures , e.g. bulk systems , semiconductor superlattices , quantum wells and wires .
section [ s.bulk ] deals with ultrafast carrier photoexcitation and relaxation in bulk semiconductors ; in particular , we will discuss the dominant role played by coherence on the carrier photogeneration process . in section [ s.sl ] we will review and discuss typical field - induced phenomena in superlattices , namely bloch oscillations and wannier - stark localization , as well as their dephasing dynamics .
section [ s.qwr ] is devoted to the analysis of the coherent optical response of quasi - one - dimensional systems ; more specifically , we will discuss the strong modifications induced by coulomb correlation on the linear and non - linear optical spectra of realistic quantum - wire structures .
finally , in section [ s.suco ] we will summarize and draw some conclusions .
coherent phenomena in atomic and molecular systems have been investigated for a long time @xcite .
the first spin echo experiment @xcite was performed in 1950 on protons in a water solution of fe@xmath0 ions .
pulses in the radio frequency range were generated by means of a gated oscillator with pulse widths between 20  @xmath1s and a few milliseconds . with
these pulses dephasing times of the order of 10 ms have been measured .    in the 1960s echo experiments
were brought into the visible range @xcite .
a q - switched ruby laser produced pulses of approximately 10 ns duration which were used to observe photon echoes from ruby . in this case
the dephasing times were of the order of 100 ns .
as already pointed out , for the observation of any coherent dynamics the pulse width has to be shorter than the typical dephasing time .
since in semiconductors electron - hole dephasing times are much shorter they are in the range of a few picoseconds down to some femtoseconds , coherent experiments in semiconductors had to wait until the development of suitable lasers able to generate sub - picosecond pulses .      the physical phenomena governing the ultrafast carrier dynamics in photoexcited semiconductors can be divided into two classes : _ coherent phenomena _ , i.e. phenomena related to the quantum - mechanical phase coherence induced by the laser photoexcitation , and _ incoherent phenomena _ ,
i.e. phenomena induced by the various phase - breaking scattering mechanisms .
the above classification in terms of coherent and incoherent phenomena is not purely academic ; it corresponds to rather different experimental techniques for the investigation of these two different regimes .
from an historical point of view , the optical spectroscopy in semiconductors started with the analysis of relatively slow incoherent phenomena ( compared to the electron - hole dephasing time - scale ) .
the investigation of nonequilibrium carriers started with the analysis of the incoherent energy - relaxation processes in the late 1960s using cw - lasers @xcite .
in the 1970s pulse sources for the study of photoexcited carriers became available @xcite and this initiated time - resolved studies of the energy - relaxation process .
many experiments based on different techniques have been performed @xcite : band - to - band luminescence @xcite which monitors the product of electron and hole distribution functions , band - to - acceptor luminescence @xcite which provides information on the electron distribution functions only , and pump - and - probe measurements @xcite where the measured differential transmission is proportional to the sum of electron and hole distribution functions .    the theoretical analysis of these relaxation phenomena is commonly based on the semiclassical boltzmann theory .
the boltzmann equations for both electron and hole distribution functions are commonly solved by means of semiclassical monte carlo simulations @xcite .    in addition to the analysis of incoherent energy - relaxation processes , the ultrafast optical spectroscopy has allowed the investigation of coherent phenomena . as already pointed out , a coherent laser field creates , in addition to a non - equilibrium carrier distribution , a coherent polarization .
the investigation of the coherent dynamics in semiconductors started in the 1980s .
different aspects have been investigated @xcite : the optical stark effect @xcite , the dephasing of free carriers @xcite and excitons @xcite , quantum beats related to various types of level splittings @xcite , charge oscillations in double - quantum - well systems @xcite and superlattices @xcite , many - particle effects @xcite , and the emission of coherent thz radiation @xcite .
these experiments can not be analyzed within the framework of the boltzmann equation .
the reason is that this coherent polarization reflects a well - defined phase relation between electrons and holes , which is neglected within the semiclassical boltzmann theory .
any proper description requires a quantum - mechanical treatment where , in addition to the distribution functions of electrons and holes , also the interband polarization is taken into account as an independent variable .
several approaches have been used in the literature @xcite : bogoliubov transformations @xcite , nonequilibrium green s functions @xcite , band - edge equations based on the real - space density matrix @xcite , and the density matrix formalism in momentum space @xcite .    during the last decade
the time resolution has been further improved down to few tens of femtoseconds @xcite .
on such extremely short time - scale coherent effects can no longer be neglected and are found to play a dominant role also for the case of typical incoherent measurements such as time - resolved and time - integrated luminescence . in such conditions , the carrier dynamics is the result of a strong interplay between coherent and incoherent phenomena .
therefore , the traditional separation between coherent and incoherent approaches for the theoretical investigation of photoexcited semiconductors is no longer valid .
what is needed is a comprehensive theoretical framework able to describe on the same kinetic level both classes of phenomena as well as their mutual coupling . to this purpose , a generalized monte carlo method for the analysis of both coherent and incoherent phenomena
has been recently proposed @xcite .
the spirit of the method is to combine the advantages of the conventional monte carlo approach @xcite in treating the incoherent , i.e. phase - breaking , dynamics with the strength of a quantum - kinetic approach in describing coherent phenomena @xcite . in particular ,
the coherent contributions are evaluated by means of a direct numerical integration while the incoherent ones are `` sampled '' by means of a conventional monte carlo simulation in the three - dimensional @xmath2-space .    this theoretical approach has ben applied successfully to the analysis of various ultrafast optical experiments , e.g. four - wave - mixing studies of many - body effects in bulk gaas @xcite and luminescence studies of the hot - carrier photogeneration process @xcite .      in order to clarify the concept of phase coherence ,
let us consider the simplest physical model for the description of light - matter interaction , i.e. an optically driven two - level system @xcite .
within a two - level picture , a ground state @xmath3 with energy @xmath4 and an excited state @xmath5 with energy @xmath6 are mutually coupled by a driving force , e.g. an external field , and/or by their mutual interaction , e.g. coulomb correlation .
the two - level - system hamiltonian @xmath7 is the sum of a free - level contribution @xmath8 and of a coupling term @xmath9 here , the usual second - quantization picture in terms of creation ( @xmath10 ) and destruction ( @xmath11 ) operators has been introduced @xcite .
the two terms forming the coupling hamiltonian @xmath12 will induce transitions from state @xmath3 to @xmath5 and vice versa according to the coupling constant @xmath13 .    as a starting point ,
let us consider a single - electron system . in the absence of interlevel coupling ( @xmath14 )
, we have two stationary states , @xmath15 ( @xmath16 being the vacuum state ) , corresponding to a single electron in level @xmath3 or @xmath5 , respectively . on the contrary , in the presence of interlevel coupling ,
the state of the system is , in general , a linear superposition of the non - interacting states in equation ( [ eq1.4 ] ) : @xmath17 whose coefficients obey the following equations of motion : @xmath18 again , we see that in the absence of interlevel coupling ( @xmath19 ) there is no time variation of the coefficients , i.e. if the system is prepared in state @xmath20 or @xmath21 it will remain in such eigenstate . on the contrary , the interlevel coupling induces a time variation of the coefficients .
the above two - level model provides the simplest description of light - matter interaction in atomic and molecular systems @xcite as well as in solids @xcite . the coupling term in equation ( [ eq1.3 ] )
has the same structure of a field - dipole interaction hamiltonian and the driving force @xmath22 can be regarded as a coherent light field .
we will now consider two limiting cases : the ultrashort- and continuous - excitation regimes .
an ultrashort optical excitation can be described in terms of a delta - like light pulse : @xmath23 . in this case , the equations of motion ( [ eq1.6 ] ) can be solved analytically : due to this excitation , the two - level system will undergo an instantaneous transition from its ground state @xmath24 to the excited state @xmath25 , with @xmath26 .
therefore , after the pulse the system will remain in the excited state @xmath27 which is a coherent quantum - mechanical superposition of the two non - interacting states .
in addition to a finite occupation probability @xmath28 of the excited state , there exists a well defined phase coherence between the ground- and the excited - state contributions , i.e. a part from their amplitudes , the coefficients @xmath29 and @xmath30 differ in phase by @xmath31 .
this is what is generally meant by optically induced phase coherence .
let us now consider a continuous optical excitation resonant with our two - level system : @xmath32 with @xmath33 .
also for this case , equations ( [ eq1.6 ] ) can be solved analytically . in particular , for the initial condition at @xmath34 given by the ground state @xmath24 , the solution is given by @xmath35 where @xmath36 is the so - called rabi frequency .
compared to the previous case , the continuous excitation gives rise to a periodic population and depopulation of the excited state according to @xmath37 .
this purely coherent phenomenon is known as `` rabi - oscillation regime '' . as for the previous case ,
the excited state in equation ( [ eq1.8 ] ) reflects a well - defined optically - induced phase coherence .
as mentioned above , the interlevel - coupling hamiltonian in equation ( [ eq1.3 ] ) may also describe , in addition to an optical excitation , some interlevel coupling due , e.g. to coulomb interaction .
also in this case , in the presence of this interlevel coupling the quantum state of the system will result in a coherent superposition of the two stationary states in ( [ eq1.4 ] ) .
again , this coupling will induce a well - defined phase coherence between the two levels .    from the above considerations we see that coherent phenomena can be divided into two basic classes : _ optically - induced _ and _ coulomb - induced _ phenomena . in order to describe the optical response of an electron gas within a semiconductor crystal , the above analysis , based on a single two - level system ,
has to be replaced by a statistical - ensemble approach , i.e. a description based on a collection of independent two - level systems .
any statistical ensemble of quantum systems is properly described by its single - particle density matrix @xcite @xmath38 where @xmath39 denotes a generic set of quantum numbers .
its diagonal elements @xmath40 provide the average occupation numbers while the non - diagonal terms describe the degree of phase coherence between states @xmath39 and @xmath41 . for the case of our two - level system
, @xmath42 reduces to a two - by - two matrix : the diagonal elements @xmath43 and @xmath44 describe , respectively , the average occupation of levels @xmath3 and @xmath5 , while the non - diagonal terms @xmath45 and @xmath46 reflect the average degree of phase coherence between the ground and the excited state . starting from the heisenberg equations of motion for the creation and destruction operators , i.e. @xmath47 \ , \qquad i\hbar { d\over dt } a^ { } _
n = [ a^ { } _ n,{\bf h}]\ , \ ] ] we obtain the following equations of motion for the above density - matrix elements : @xmath48 they are known as optical bloch equations @xcite in analogy with the equations first derived by bloch @xcite for the spin systems .
this statistical - ensemble description reduces to the previous one for the case of a so called `` pure state '' , i.e. the case in which all the two - level systems forming the ensemble are in the same quantum - mechanical state @xmath49 . in this case , the above set of kinetic equations and the equations of motion ( [ eq1.6 ] ) are totally equivalent .
however , as we will discuss in section [ s.tb ] , the density - matrix approach introduced so far allows , in addition to the study of coherent phenomena , the analysis of incoherent phenomena , which is not possible within a simple schrdinger - equation formalism .
the optical bloch equations ( [ eq1.10 ] ) provide the simplest description of light - matter interaction .
let us consider again the case of a continuous optical excitation resonant with our two - level system : @xmath32 .
if we choose as initial condition at time @xmath34 the state @xmath50 , the solution of the above optical bloch equations is given by : @xmath51\ , \end{aligned}\ ] ] where @xmath52 .
as for the case of a single two - level system , the above solution describes a rabi - oscillation regime .
in particular , the interlevel density - matrix element @xmath53 originates from the superposition of the two frequency components @xmath54 and @xmath55 .
they differ from @xmath56 by the rabi frequency @xmath57 .
such modification of the two - level frequency @xmath56 due to its coupling with the external field is known as `` rabi splitting '' @xcite .    if we now rewrite the interlevel density - matrix element @xmath53 in ( [ eq1.12 ] ) as @xmath58 we see that , a part from the quantum - mechanical phase factor corresponding to the energy separation @xmath33 , its amplitude exhibits rabi oscillations according to @xmath59 .
more specifically , we obtain : @xmath60 i.e. the quantity @xmath61 is proportional to the product of the two occupation numbers , thus reflecting the total ( or macroscopic ) dipole moment of the two - level system at time @xmath62 .
this elucidates the link between optically - induced phase coherence and polarization : a coherent optical excitation gives rise to a coherent quantum - mechanical superposition of the two states which results in a macroscopic polarization of the system .
such polarization field is fully described by the non - diagonal matrix element @xmath53 in ( [ eq1.12 ] ) .
the above simplified description of light - matter interaction neglects any kind of incoherent , i.e. phase - breaking , phenomena . as we will see in section [ s.tb ]
, such dephasing processes will lead to a decay of the interband polarization @xmath53 , thus destroying the optically induced phase coherence in the carrier system .    as a final remark ,
let us discuss the concept of phase coherence in connection with the choice of representation .
on the basis of the density - matrix formalism considered so far , the phase coherence is described by the non - diagonal density - matrix elements @xmath42 in ( [ eq1.9 ] ) . however
, this separation in _ diagonal _ and _ non - diagonal _ terms is clearly representation dependent : what is diagonal in a given basis is in general not diagonal in a different basis and vice versa . if one considers , as basis set , the eigenstates of the total hamiltonian @xmath63 ( which includes the external driving force ) , the density matrix @xmath64 in ( [ eq1.9 ] ) is always diagonal , i.e. no phase coherence .
thus , in order to speak of phase coherence , we need to regard the total hamiltonian @xmath63 as the sum of the system hamiltonian @xmath65 plus a driving - force term @xmath12 ( see equation ( [ eq1.1 ] ) ) .
provided such separation between _ system of interest _ and _ driving force _ , the non - diagonal density - matrix elements within the representation given by the eigenstates of @xmath65 will describe the degree of coherence induced in the system by the driving force @xmath12 .
two typical cases , discussed respectively in sections [ s.sl ] and [ s.qwr ] , may help in clarifying the meaning of coherence .
the first case is that of a semiconductor superlattice in the presence of a constant and homogeneous electric field : as we will see , within the wannier - stark representation the bloch - oscillation dynamics is the result of phase coherence between the various wannier - stark states ; on the contrary , within the bloch representation the same phenomenon is purely described in terms of carrier populations , i.e. no off - diagonal density - matrix elements .
the second case is that of coulomb - induced phase coherence : within a free - particle representation , even at the simplest hartree - fock level , coulomb interaction induces phase coherence between free - carrier states .
this is clearly not the case within an exciton basis , where the density matrix is diagonal .
in this section we will review in a systematic way the basic ideas used in the theoretical analysis of ultrafast carrier dynamics in semiconductors .
the approach we are going to present is based on the density - matrix formalism introduced in section [ ss.moc ] .      in order to study the optical and transport properties of semiconductor bulk and heterostructures ,
let us consider a gas of carriers in a crystal under the action of an applied electromagnetic field .
the carriers will experience their mutual interaction as well as the interaction with the phonon modes of the crystal .
such physical system can be described by the following hamiltonian : @xmath66 the first term describes the noninteracting - carrier system in the presence of the external electromagnetic field while the second one refers to the free - phonon system .
the last three terms describe many - body contributions : they refer , respectively , to carrier - carrier , carrier - phonon , and phonon - phonon interactions .    in order to discuss their explicit form ,
let us introduce the usual second - quantization field operators @xmath67 and @xmath68 .
they describe , respectively , the creation and the destruction of a carrier in @xmath69 . in terms of the above field operators the carrier hamiltonian @xmath70 can be written as @xmath71   { \bf \psi}({\bf r})\ .\ ] ] here , @xmath72 denotes the periodic potential due to the perfect crystal while @xmath73 and @xmath74 denote , respectively , the vector and scalar potentials corresponding to the external electromagnetic field .
since we are interested in the electrooptical properties as well as in the ultrafast dynamics of photoexcited carriers , the electromagnetic field acting on the crystal and the corresponding electromagnetic potentials will be the sum of two different contributions : the high - frequency laser field responsible for the ultrafast optical excitation and the additional electromagnetic field acting on the photoexcited carriers on a longer time - scale . more specifically , by denoting with the labels @xmath75 and @xmath76 these two contributions , we can write @xmath77 and recalling that @xmath78 we have @xmath79 equation ( [ eq4 ] ) , which gives the electromagnetic fields in terms of the corresponding vector and scalar potentials , reflects the well known gauge freedom : there is an infinite number of possible combinations of @xmath80 and @xmath81 which give rise to the same electromagnetic field @xmath82 . we will use such freedom of choice for the laser field ( term @xmath75 ) : we assume a homogeneous ( space - independent ) laser field @xmath83 fully described by the scalar potential @xmath84 this assumption , which corresponds to the well known dipole approximation , is well justified as long as the space - scale of interest is small compared to the light wavelength .
the explicit form of the laser field considered here is @xmath85 where @xmath86 is the amplitude of the light field and @xmath56 denotes its central frequency .    with this particular choice of the electromagnetic potentials describing the laser field , the hamiltonian in ( [ eq2 ] )
can be rewritten as @xmath87 where @xmath88   { \bf \psi}({\bf r})\ ] ] describes the carrier system in the crystal under the action of the electromagnetic field @xmath76 only , while @xmath89 describes the carrier - light ( cl ) interaction due to the laser photoexcitation .    in analogy with the carrier system
, by denoting with @xmath90 and @xmath91 the creation and destruction operators for a phonon of mode @xmath92 and wavevector @xmath93 , the free - phonon hamiltonian takes the form @xmath94 where @xmath95 is the dispersion relation for the phonon mode @xmath92 .
let us now discuss the explicit form of the many - body contributions .
the carrier - carrier interaction is described by the two - body hamiltonian @xmath96 where @xmath97 denotes the coulomb potential .
let us now introduce the carrier - phonon interaction hamiltonian @xmath98 where @xmath99\ ] ] is the electrostatic phonon potential induced by the lattice vibrations . here , the explicit form of the coupling function @xmath100 depends on the particular phonon mode @xmath92 ( acoustic , optical , etc . ) as well as on the coupling mechanism considered ( deformation potential , polar coupling , etc . ) .
let us finally discuss the phonon - phonon contribution @xmath101 .
the free - phonon hamiltonian @xmath102 in ( [ eq11 ] ) , which describes a system of noninteracting phonons , by definition accounts only for the harmonic part of the lattice potential .
however , non - harmonic contributions of the interatomic potential can play an important role in determining the lattice dynamics in highly excited systems @xcite , since they are responsible for the decay of optical phonons into phonons of lower frequency . in our second - quantization picture ,
these non - harmonic contributions can be described in terms of a phonon - phonon interaction which induces , in general , transitions between free - phonon states . here
, we will not discuss the explicit form of the phonon - phonon hamiltonian @xmath101 responsible for such a decay .
we will simply assume that such phonon - phonon interaction is so efficient to maintain the phonon system in thermal equilibrium .
this corresponds to neglecting hot - phonon effects @xcite .
it is well known that the coordinate representation used so far is not the most convenient one in describing the electron dynamics within a periodic crystal . in general , it is more convenient to employ the representation given by the eigenstates of the noninteracting - carrier hamiltonian or a part of it since it automatically accounts for some of the symmetries of the system . for the moment we will simply consider an orthonormal basis set @xmath103 without specifying which part of the hamiltonian is diagonal in such representation
this will allow us to write down equations valid in any quantum - mechanical representation .
since the noninteracting - carrier hamiltonian is , in general , a function of time , also the basis functions @xmath104 may be time - dependent . here , the label @xmath39 denotes , in general , a set of discrete and/or continuous quantum numbers . in the absence of electromagnetic field
, the above wavefunctions will correspond to the well known bloch states of the crystal and the index @xmath39 will reduce to the wavevector @xmath2 plus the band ( or subband ) index @xmath105 . in the presence of a homogeneous magnetic field
the eigenfunctions @xmath104 may instead correspond to landau states .
finally , for the case of a constant and homogeneous electric field , there exist two equivalent representations : the accelerated bloch states and the wannier - stark picture . such equivalence results to be of crucial importance in understanding the relationship between bloch oscillations and wannier - stark localization and , for this reason , it will be discussed in more detail in section [ ss.qmp ] .
let us now reconsider the system hamiltonian introduced so far in terms of such @xmath104 representation . as a starting point , we may expand the second - quantization field operators in terms of the new wavefunctions : @xmath106 the above expansion defines the new set of second - quantization operators @xmath107 and @xmath108 ; they describe , respectively , the creation and destruction of a carrier in state @xmath39 .    for the case of a semiconductor structure ( the only one considered here ) ,
the energy spectrum of the noninteracting - carrier hamiltonian ( [ eq9 ] ) or a part of it is always characterized by two well - separated energy regions : the valence and the conduction band .
also in the presence of an applied electromagnetic field , the periodic lattice potential @xmath109 gives rise to a large energy gap .
therefore , we deal with two energetically well - separated regions , which suggests the introduction of the usual electron - hole picture .
this corresponds to a separation of the set of states @xmath110 into conduction states @xmath111 and valence states @xmath112 .
thus , also the creation ( destruction ) operators @xmath107 ( @xmath108 ) introduced in equation ( [ eq15 ] ) will be divided into creation ( destruction ) electron and hole operators : @xmath113 ( @xmath114 ) and @xmath115 ( @xmath116 ) . in terms of the new electron - hole picture ,
the expansion ( [ eq15 ] ) is given by : @xmath117 { \bf \psi}^\dagger({\bf r } ) = & & \sum_i \phi^{e * } _ i({\bf r } ) c^\dagger_i   + \sum_j \phi^h_j({\bf r } ) d^ { } _ j \ .\end{aligned}\ ] ] if we now insert the above expansion into equation ( [ eq9 ] ) , the noninteracting - carrier hamiltonian takes the form @xmath118 where @xmath119 \phi^{e / h}_{l'}({\bf r})\ ] ] are just the matrix elements of the hamiltonian in the @xmath120-representation .
the @xmath121 sign refers , respectively , to electrons and holes while @xmath122 denotes the conduction - band edge . here
, we neglect any valence - to - conduction band coupling due to the external electromagnetic field and vice versa .
this is well fulfilled for the systems and field - regimes we are going to discuss in this paper .
as already pointed out , the above hamiltonian may be time - dependent .
we will discuss this aspect in the following section , where we will derive our set of kinetic equations .
let us now write in terms of our electron - hole representation the carrier - light interaction hamiltonian ( [ eq10 ] ) : @xmath123\ .\ ] ] the above expression has been obtained within the well known rotating - wave approximation @xcite by neglecting intraband transitions , absent for the case of optical excitations . here
, @xmath124 denotes the optical dipole matrix element between states @xmath125 and @xmath126 .
similarly , the carrier - carrier hamiltonian ( [ eq12 ] ) can be rewritten as : @xmath127 where @xmath128 are the coulomb matrix elements within our @xmath120-representation .
the first two terms describe the repulsive electron - electron and hole - hole interaction while the last one describes the attractive electron - hole interaction . here , we neglect terms that do not conserve the number of electron - hole pairs , i.e. impact - ionization and auger - recombination processes @xcite , as well as the interband exchange interaction . this monopole - monopole approximation is justified as long as the exciton binding energy is small compared to the energy gap .
finally , let us rewrite the carrier - phonon interaction hamiltonian introduced in equation ( [ eq13 ] ) : @xmath129 \nonumber \\ & & - \sum\limits_{jj',{\bf q}\lambda } \left [ g^h_{jj',{\bf q}\lambda }   d^\dagger_j b^ { } _ { { \bf q}\lambda } d^ { } _ { j ' } + g^{h * } _ { jj',{\bf q}\lambda }   d^\dagger_{j ' } b^\dagger_{{\bf q}\lambda } d^ { } _ j \right]\end{aligned}\ ] ] with @xmath130 in equation ( [ eq22 ] ) we can clearly recognize four different contributions corresponding to electron and hole phonon absorption and emission .
our kinetic description of the ultrafast carrier dynamics in semiconductors is based on the density - matrix formalism introduced in section [ ss.moc ] . since
this approach has been reviewed and discussed in several papers @xcite and text - books @xcite , here we will simply recall in our notation the kinetic equations relevant for the analysis of carrier dynamics in semiconductor heterostructures , generalizing the approach presented in @xcite to the case of a time - dependent quantum - mechanical representation .
the set of kinetic variables is the same considered in @xcite .
given our electron - hole representation @xmath131 , we will consider the intraband electron and hole single - particle density matrices @xmath132 as well as the corresponding interband density matrix @xmath133 here , the diagonal elements @xmath134 and @xmath135 correspond to the electron and hole distribution functions of the boltzmann theory while the non - diagonal terms describe intraband polarizations . on the contrary , the interband density - matrix elements @xmath136 describe interband ( or optical ) polarizations .    in order to derive the set of kinetic equations , i.e. the equations of motion for the above kinetic variables , the standard procedure starts by deriving the equations of motion for the electron and hole operators introduced in ( [ eq16 ] ) : @xmath137 by applying the heisenberg equation of motion for the field operator @xmath138 , i.e. @xmath139\ , \ ] ] it is easy to obtain the following equations of motion : @xmath140 +   \frac{1}{i\hbar}\sum_{i ' } z^e_{ii ' } c^ { } _ { i ' } \nonumber \\[1ex ] \frac{d}{dt } d^ { } _ j = & & \frac{1}{i\hbar } \left[d^ { } _ j,{\bf h}\right ] +   \frac{1}{i\hbar}\sum_{j ' } z^h_{jj ' } d^ { } _ { j'}\\end{aligned}\ ] ] with @xmath141 as for the case of equation ( [ eq17 ] ) , here we neglect again valence - to - conduction band coupling and vice versa . compared to the more conventional heisenberg equations of motion , they contain an extra - term , the last one .
it accounts for the possible time dependence of our @xmath120-representation which will induce transitions between different states according to the matrix elements @xmath142 .    by combining the above equations of motion with the definitions of the kinetic variables in ( [ eq24]-[eq25 ] ) , the resulting set of kinetic equations can be schematically written as : @xmath143 \frac{d}{dt } f^h_{j_1j_2 } = & & \frac{d}{dt }
f^h_{j_1j_2}\biggl|_{\bf h } +   \frac{d}{dt } f^h_{j_1j_2}\biggl|_\phi \nonumber \\[1ex ] \frac{d}{dt } p^ { } _ { j_1i_1 } = & & \frac{d}{dt } p^ { } _ { j_1i_1}\biggl|_{\bf h } +   \frac{d}{dt } p^ { } _ { j_1i_1}\biggl|_\phi \ .\end{aligned}\ ] ] they exhibit the same structure of the equations of motion ( [ eq28 ] ) for the electron and hole creation and destruction operators : a first term induced by the system hamiltonian @xmath63 ( which does not account for the time variation of the basis states ) and a second one induced by the time dependence of the basis functions @xmath120 .
let us start discussing this second term , whose explicit form is : @xmath144 f^e_{i_3i_4 }   \nonumber \\[1ex ] \frac{d}{dt } f^h_{j_1j_2}\biggl|_\phi = & & \frac{1}{i\hbar } \sum\limits_{j_3j_4}\left[z^h_{j_2j_4}\delta_{j_1j_3 } - z^h_{j_3j_1}\delta_{j_2j_4 } \right ] f^h_{j_3j_4 } \nonumber \\[1ex ] \frac{d}{dt } p^ { } _ { j_1i_1}\biggl|_\phi = & & \frac{1}{i\hbar }   \sum\limits_{i_2j_2}\left[z^h_{j_1j_2}\delta_{i_1i_2 } + z^e_{i_1i_2}\delta_{j_1j_2 } \right ] p^ { } _ { j_2i_2 } \ .\end{aligned}\ ] ] as we will see in section [ ss.qmp ] , these contributions play a central role for the description of zener tunneling within the vector - potential representation .
let us now come to the first term .
this , in turn , is the sum of different contributions , corresponding to the various parts of the hamiltonian .
the total hamiltonian can be regarded as the sum of two terms , a single - particle contribution plus a many - body one : @xmath145 the explicit form of the time evolution due to the single - particle hamiltonian @xmath146 ( non - interacting carriers plus carrier - light interaction plus free phonons ) is given by : @xmath147 f^e_{i_3i_4 } \nonumber \\ & & + \sum\limits_{j_1}\left[u_{i_2j_1 } p^*_{j_1i_1 } -u^*_{i_1j_1 } p^ { } _ { j_1i_2}\right ] \bigg\ } \nonumber \\ \frac{d}{dt } f^h_{j_1j_2}\biggl|_{sp } = & & \frac{1}{i\hbar } \bigg\ { \sum\limits_{j_3j_4}\left[\epsilon^h_{j_2j_4}\delta_{j_1j_3 } - \epsilon^h_{j_3j_1}\delta_{j_2j_4 } \right ] f^h_{j_3j_4 } \nonumber \\ & & + \sum\limits_{i_1}\left[u_{i_1j_2 } p^*_{j_1i_1 } -u^*_{i_1j_1 } p^ { } _ { j_2i_1 } \right ] \bigg\ } \nonumber \\   \frac{d}{dt }
p^ { } _ { j_1i_1}\biggl|_{sp } = & & \frac{1}{i\hbar } \bigg\ { \sum\limits_{i_2j_2}\left[\epsilon^h_{j_1j_2}\delta_{i_1i_2 } + \epsilon^e_{i_1i_2}\delta_{j_1j_2 } \right ] p^ { } _ { j_2i_2 } \nonumber \\ & & + \sum\limits_{i_2j_2 } u^ { } _ { i_2j_2 } \left[\delta_{i_1i_2}\delta_{j_1j_2 } - f^e_{i_2i_1}\delta_{j_1j_2 } - f^h_{j_2j_1}\delta_{i_1i_2 } \right ] \bigg\}\end{aligned}\ ] ] with @xmath148 .
this is a closed set of equations , which is a consequence of the single - particle nature of @xmath146 .
in addition , we stress that the structure of the two contributions entering equation ( [ eq30 ] ) is very similar : one can include the contribution ( [ eq31 ] ) into ( [ eq33 ] ) by replacing @xmath149 with @xmath150 .
let us finally discuss the contributions due to the many - body part of the hamiltonian : carrier - carrier and carrier - phonon interactions ( the phonon - phonon one is not explicitly considered here ) . as discussed in @xcite , for both interaction mechanisms one can derive a hierarchy of equations involving higher - order density matrices .
in order to close such equations with respect to our set of kinetic variables , approximations are needed .
the lowest - order contributions to our equations of motion are given by first - order terms in the many - body hamiltonian : hartree - fock level .
since we will neglect coherent - phonon states , the only hartree - fock contributions will come from carrier - carrier interaction .
they simply result in a renormalization @xmath151 of the single - particle energy matrices @xmath152 as well as in a renormalization @xmath153 of the external field @xmath154 .
we stress that the hartree - fock approximation , which consists in factorizing average values of four - point operators into products of two density matrices , is independent from the quantum - mechanical picture .
it is then clear that the above kinetic equations are valid in any quantum - mechanical representation .
all the contributions to the system dynamics discussed so far describe a fully coherent dynamics , i.e. no scattering processes . in order to treat incoherent phenomena , e.g. energy relaxation and dephasing
, one has to go one step further in the perturbation expansion taking into account also second - order contributions ( in the perturbation hamiltonian @xmath155 ) .
the derivation of these higher - order contributions , discussed in @xcite , will not be repeated here .
again , in order to obtain a closed set of equations ( with respect to our set of kinetic variables ( [ eq24]-[eq25 ] ) ) additional approximations are needed , namely the mean - field and markov approximations . as for the hartree - fock case
, the mean - field approximation allows to write the various higher - order density matrices as products of single - particle ones .
the markov approximation allows to eliminate the additional higher - order kinetic variables , e.g. phonon - assisted density matrices , providing a closed set of equations still local in time , i.e. no memory effects @xcite .
this last approximation is not performed in the quantum - kinetic theory discussed in @xcite where , in addition to our single - particle variables , one considers two - particle @xcite and phonon - assisted @xcite density matrices .
while the mean - field approximation is representation - independent , this is unfortunately not the case for the markov limit .
this clearly implies that the validity of the markov approximation is strictly related to the quantum - mechanical representation considered .
the above kinetic description , based on intra- and interband density matrices , allows us to evaluate any single - particle quantity .
in particular , for the analysis of the ultrafast carrier dynamics in photoexcited semiconductors two physical quantities play a central role : the intra- and interband total ( or macroscopic ) polarizations : @xmath156 where @xmath157 and @xmath158 denote , respectively , the intra- and interband dipole matrix elements in our @xmath120-representation .
the time derivative of the intraband polarization @xmath159 describes the radiation field induced by the bloch - oscillation dynamics ( which for a superlattice structure is in the terahertz range ) while the fourier transform of the interband ( or optical ) polarization @xmath160 provides the linear and non - linear optical response of the system .
in this section , we will discuss the dominant role played by optically - induced phase coherence on the ultrafast generation and relaxation of photoexcited carriers in bulk semiconductors .
in particular , we will compare the description based on the theoretical approach discussed above with the more conventional picture based on the boltzmann theory .      in order to study the ultrafast carrier dynamics in bulk systems ,
let us consider a two - band semiconductor model .
for the case of a homogeneous system , the only relevant terms of the single - particle density matrix in @xmath2-space are the diagonal ones .
this property , due to the translational symmetry of the hamiltonian , reduces the set of kinetic variables ( [ eq24]-[eq25 ] ) to the following electron and hole distribution functions ( intraband density - matrix elements ) @xmath161 together with the corresponding polarizations ( interband density - matrix elements ) has been applied to our plane - wave states . in particular , due to the charge - conjugation symmetry , the hole states are still labeled in terms of the corresponding valence - electron states , i.e. @xmath162 . ] @xmath163 the explicit form of the kinetic equations ( [ eq30 ] ) within the above two - band picture is given by @xmath164 \nonumber \\
\frac{d}{dt } f_{\bf k}^h = & & g_{\bf -k}(t )   - \sum_{\bf k ' } \left [ w^h_{\bf k'k } f_{\bf k}^h \left ( 1 - f_{\bf k'}^h \right ) - w^h_{\bf kk ' } f_{\bf k'}^h \left ( 1 - f_{\bf k}^h \right ) \right ] \nonumber \\ \frac{d}{dt } p_{\bf k}^ { } = & & \frac{1}{i\hbar}\left [ \left ( \epsilon_{\bf k}^e + \epsilon_{\bf -k}^h \right ) p_{\bf k}^ { } + u_{\bf k}\left ( 1 - f_{\bf k}^e - f_{\bf -k}^h \right ) \right ] \nonumber \\ & & { }   - \sum_{\bf k ' } \left [ w^p_{\bf k'k } p_{\bf k}^ { } - w^p_{\bf kk ' } p_{\bf k'}^ { } \right ] \ , \end{aligned}\ ] ] with the generation rate @xmath165 \ .\ ] ] here , the incoherent contributions are treated within the usual markov limit as described in @xcite . within such approximation scheme , the incoherent contributions to the polarization dynamics exhibit the same structure as for the distribution functions in terms of the following in- and out - scattering rates @xmath166 \ , \ ] ] where @xmath167 are the usual scattering rates of the semiclassical boltzmann theory .
this boltzmann - like structure of the scattering term in the polarization equation is the starting point of the generalized monte carlo method discussed in section [ s.int ] @xcite .
the above kinetic equations are known as _ semiconductor bloch equations _ ( sbe ) ) reduce to the optical bloch equations introduced in section [ ss.moc ] , i.e. they describe a collection of independent ( non - interacting ) two - level systems . ] .
as we can see , here the carrier photogeneration is a two - step process : the external field @xmath154 induces a coherent polarization @xmath53 which , in turn , generates electron - hole pairs via its coupling with the field according to equation ( [ eq4bulk ] ) .
the generation rate is thus determined by the interband polarization @xmath168 which , in turn , is influenced by the various density - dependent scattering mechanisms , e.g. carrier - carrier processes .
therefore , in contrast to the semiclassical case discussed below , the generation rate within the sbe model is clearly density dependent .
the conventional boltzmann model is obtained from the above sbe by performing an adiabatic elimination of the interband polarization @xmath168 , i.e. by inserting a formal solution of the polarization equation into the generation rate ( [ eq4bulk ] ) and then performing a markov limit with respect to the electron and hole distribution functions @xcite .
this corresponds to assuming that the carrier distributions are slowly - varying functions on the time - scale of the laser photoexcitation , i.e. the carrier generation and relaxation are treated as independent processes . within such approximation scheme , except for phase - space - filling effects ,
the generation rate entering the semiclassical boltzmann equations ( be ) for electrons and holes is fully determined by the temporal and spectral characteristics of the laser pulse .
contrary to the sbe case , all effects related to the optically induced phase coherence and to its temporal decay are neglected .      in order to compare the different models of carrier dynamics in photoexcited semiconductors ,
let us review some simulated experiments @xcite based on the generalized monte carlo solution of the sbe @xcite discussed in section [ s.int ] .
the corresponding be has been solved , for comparison , by a standard ensemble monte carlo ( emc ) simulation @xcite . both be and sbe have been solved numerically for the case of gaas bulk excited by a 150  fs laser pulse .    in figure [ fig1bulk ] the generation rate at different times as obtained from the sbe is plotted as a function of the carrier wave vector for three different densities . at the lowest density
the behavior is essentially the same as in the case without carrier - carrier scattering : energy - time uncertainty leads to an initially very broad generation rate ; with increasing time the line narrows and , in the tails , exhibits negative parts due to a stimulated recombination of carriers initially generated off - resonance @xcite . after the pulse
, the distribution function of the generated carriers is in good agreement with the be result .
scattering processes destroy the coherence between electrons and holes which is necessary for the stimulated recombination processes . as a consequence , with increasing density the negative tails
are strongly reduced and the generation remains broad for all times resulting in a much broader carrier distribution than in the be case .
hot carrier luminescence has proven to be a powerful technique to study the ultrafast dynamics of photoexcited carriers in semiconductors @xcite . in band - to - acceptor ( ba ) luminescence experiments @xcite , due to their high sensitivity
, carrier densities as low as several @xmath169  @xmath170 have been reached .
thus , the transition between a dynamics dominated by carrier - phonon scattering to a dynamics dominated by carrier - carrier scattering ( with its consequences for the generation process discussed above ) is experimentally accessible .    in the ba luminescence experiment reviewed here @xcite ,
a 3  @xmath1 m thick gaas layer doped with be acceptors of a concentration of @xmath171 @xmath170 is excited at a photon energy of 1.73  ev by transform limited 150 fs pulses from a mode - locked ti : sapphire laser .
time - integrated luminescence spectra are recorded @xcite .
the right column of figure [ fig2bulk ] shows measured ba luminescence spectra for three different values of the carrier density . at low density
we observe an initial peak of the generated carriers ( marked bold ) and pronounced replicas due to the emission of an integer number of optical phonons . with increasing density
the peaks become broader and at the highest density only a slight structure related to the phonons is still visible .    these measured spectra
are compared with corresponding simulated experiments based on the be and sbe models @xcite ( left and middle column in figure [ fig2bulk ] ) .
we find several pronounced differences between the two models . in the semiclassical model
the unrelaxed peak is clearly visible up to the highest density in contrast to the coherent model , where , in agreement with the experiment , this peak is strongly broadened . at the higher densities
the semiclassical spectra exhibit an increase in the broadening of subsequent replicas which is not present in the bloch - model calculations as well as in the experimental results .    to illustrate this difference quantitatively , in figure [ fig3bulk ]
we have plotted the full width at half maximum ( fwhm ) of the three highest peaks in the spectra . from the semiclassical model we obtain a strong increase in the density dependence of subsequent peaks .
this behavior can be easily understood : due to the emission time of an optical phonon of about @xmath172  fs , the carriers populate subsequent replicas at increasing times and , therefore , the efficiency of carrier - carrier scattering processes in broadening the peaks increases .
however , the measured spectra exhibit a different behavior which is quantitatively reproduced by the sbe model : already the unrelaxed peak exhibits a strong increase with increasing density and the density dependence of all replicas is approximately the same .
the reason is that the broadening of the generation process as discussed above obviously dominates over the broadening due to subsequent scattering processes .
as discussed in @xcite , this is due to the fact that the generation process is strongly influenced by the decay of the interband polarization which , in turn , is due to electron plus hole scattering , while the broadening of the electron distribution during the relaxation process is due to electron scattering only .
the above theoretical and experimental analysis constitutes a clear demonstration of the importance of dephasing processes for the analysis of luminescence spectra .
the density dependence of the spectra in the interesting transition region between carrier - phonon and carrier - carrier dominated dynamics can only be explained by a coherent modeling of the carrier generation including the dynamics of the interband polarization .
the main mechanism determining the width of the peaks is the broadening of the generation rate .
it can be shown that for band - to - acceptor spectra the broadening of the recombination process , neglected in the present model , plays a minor role @xcite . however , for band - to - band spectra also this phenomenon should be taken into account .
for the case discussed above the background due to band - to - band luminescence has been found to be of negligible importance @xcite .
ever since the initial applications of quantum mechanics to the dynamics of electrons in solids , the analysis of bloch electrons moving in a homogeneous electric field has been of central importance . by employing semiclassical arguments , in 1928
bloch @xcite demonstrated that , a wave packet given by a superposition of single - band states peaked about some quasimomentum , @xmath173 , moves with a group velocity given by the gradient of the energy - band function with respect to the quasimomentum and that the rate of change of the quasimomentum is proportional to the applied field @xmath174 .
this is often referred to as the `` acceleration theorem '' : @xmath175 thus , in the absence of interband tunneling and scattering processes , the quasimomentum of a bloch electron in a homogeneous and static electric field will be uniformly accelerated into the next brillouin zone in a repeated - zone scheme ( or equivalently undergoes an umklapp process back in to the first zone ) .
the corresponding motion of the bloch electron through the periodic energy - band structure , shown in figure [ fig1sl ] , is called `` bloch oscillation '' ; it is characterized by an oscillation period @xmath176 , where @xmath177 denotes the lattice periodicity in the field direction .
there are two mechanisms impeding a fully periodic motion : interband tunneling and scattering processes .
interband tunneling is an intricate problem and still at the center of a continuing debate .
early calculations of the tunneling probability into other bands in which the electric field is represented by a time - independent scalar potential were made by zener @xcite using a wentzel - kramers - brillouin generalization of bloch functions , by houston @xcite using accelerated bloch states ( houston states ) , and subsequently by kane @xcite and argyres @xcite who employed the crystal - momentum representation .
their calculations lead to the conclusion that the tunneling rate per bloch period is much less than unity for electric fields up to @xmath178v / cm for typical band parameters corresponding to elemental or compound semiconductors .    despite the apparent agreement among these calculations , the validity of employing the crystal - momentum representation or houston functions to describe electrons moving in a non - periodic ( crystal plus external field ) potential has been disputed .
the starting point of the controversy was the original paper by wannier @xcite .
he pointed out that , due to the translational symmetry of the crystal potential , if @xmath179 is an eigenfunction of the scalar - potential hamiltonian ( corresponding to the perfect crystal plus the external field ) with eigenvalue @xmath149 , then any @xmath180 is also an eigenfunction with eigenvalue @xmath181 , where @xmath182 is the so - called wannier - stark splitting ( @xmath183 being the primitive lattice vector along the field direction ) .
he concluded that the translational symmetry of the crystal gives rise to a discrete energy spectrum , the so - called wannier - stark ladder .
the states corresponding to these equidistantly spaced levels are localized states , as schematically shown in figure [ fig2sl ] for the case of a semiconductor superlattice .
the existence of such energy quantization was disputed by zak @xcite , who pointed out that for the case of an infinite crystal the scalar potential @xmath184 is not bounded , which implies a continuous energy spectrum .
thus , the main point of the controversy was related to the existence ( or absence ) of wannier - stark ladders . more precisely , the point was to decide if interband tunneling ( neglected in the original calculation by wannier @xcite ) is so strong to destroy the wannier - stark energy quantization ( and the corresponding bloch oscillations ) or not .
it is only during the last decade that this controversy came to an end . from a theoretical point of view ,
most of the formal problems related to the non - periodic nature of the scalar potential ( superimposed to the periodic crystal potential ) were finally removed by using a vector - potential representation of the applied field @xcite . within such vector - potential picture , upper boundaries for the interband tunneling probability
have been established at a rigorous level , which show that an electron may execute a number of bloch oscillations before tunneling out of the band @xcite , in qualitatively good agreement with the earlier predictions of zener and kane @xcite .
the second mechanism impeding a fully periodic motion is scattering by phonons , impurities , etc .
( see figure [ fig1sl ] ) .
this results in lifetimes shorter than the bloch period @xmath185 for all reasonable values of the electric field , so that bloch oscillations should not be observable in conventional solids .    in superlattices , however , the situation is much more favourable because of the smaller bloch period @xmath185 resulting from the small width of the mini - brillouin zone in the field direction @xcite .
indeed , the existence of wannier - stark ladders as well as bloch oscillations in superlattices has been confirmed by a number of recent experiments @xcite .
the photoluminescence and photocurrent measurements of the biased gaas / gaalas superlattices performed by mendez and coworkers @xcite , together with the electroluminescence experiments by voisin and coworkers @xcite , provided the earliest evidence of the field - induced wannier - stark ladders in superlattices .
a few years later , feldmann and coworkers @xcite were able to measure bloch oscillations in the time domain through a four - wave - mixing experiment originally suggested by von plessen and thomas @xcite .
a detailed analysis of the bloch oscillations in the four - wave - mixing signal ( which reflects the interband dynamics ) has been also performed by leo and coworkers @xcite .
in addition to the above interband - polarization analysis , bloch oscillations have been also detected by monitoring the intraband polarization which , in turn , is reflected by anisotropic changes in the refractive index @xcite .
measurements based on transmittive electrooptic sampling ( teos ) have been performed by dekorsy and coworkers @xcite . finally bloch oscillations were recently measured through a direct detection of the terahertz ( thz ) radiation in semiconductor superlattices @xcite .
let us now apply the theoretical approach presented in section [ s.tb ] to the case of a semiconductor superlattice in the presence of an uniform ( space - independent ) electric field .
the non - interacting carriers within the superlattice crystal will then be described by the hamiltonian @xmath186 in equation ( [ eq9 ] ) , where now the electrodynamic potentials @xmath187 and @xmath188 ( in the following simply denoted with @xmath80 and @xmath81 ) correspond to a homogeneous electric field @xmath189 .    as pointed out in section [ ss.ps ] , the natural quantum - mechanical representation is given by the eigenstates of this hamiltonian : @xmath190 \phi_n({\bf r } ) = \epsilon_n \phi_n({\bf r})\ .\ ] ] however , due to the gauge freedom discussed in section [ ss.ps ] , there is an infinite number of possible combinations of @xmath80 and @xmath81 and therefore of possible hamiltonians which describe the same homogeneous electric field @xmath191 . in particular , one can identify two independent choices : the vector - potential gauge @xmath192 and the scalar - potential gauge @xmath193    as shown in @xcite , the two independent choices correspond , respectively , to the well known bloch - oscillation and wannier - stark pictures .
they simply reflect two equivalent quantum - mechanical representations and , therefore , any physical phenomenon can be described in both pictures .
more specifically , within the vector - potential picture ( [ eq3sl ] ) , the eigenfunctions @xmath104 in ( [ eq2sl ] ) are the so - called accelerated bloch states ( or houston states ) @xcite .
as discussed in @xcite , such time dependent representation constitutes the natural basis for the description of bloch oscillations , i.e. it provides a rigorous quantum - mechanical derivation of the acceleration theorem ( [ eq1sl ] ) , thus showing that this is not a simple semiclassical result . ) and the corresponding bloch - oscillation dynamics are usually regarded as a semiclassical result compared to the wannier - stark picture . on the contrary , they correspond to two different fully quantum - mechanical pictures . ] within such representation , bloch oscillations are fully described by the diagonal terms of the intraband density matrix ( [ eq24 ] ) ( semiclassical distribution functions ) .
therefore , non - diagonal elements , describing phase - coherence between different bloch states , do not contribute to the intraminiband dynamics . however , they are of crucial importance for the description of interminiband dynamics , i.e. field - induced zener tunneling , which in this bloch - state representation originates from the time variation of our basis states ( see equation ( [ eq31 ] ) ) .    on the contrary , within the scalar - potential picture ( [ eq4sl ] ) ,
the eigenfunctions @xmath104 in ( [ eq2sl ] ) are the well - known wannier - stark states @xcite . contrary to the previous bloch picture , within such representation
the intraminiband bloch dynamics originates from a quantum interference between different wannier - stark states , thus involving non - diagonal elements of the intraband density matrix ( [ eq24 ] ) .      in this section
, we will review recent simulated experiments of the ultrafast carrier dynamics in semiconductor superlattices @xcite .
they are based on a generalized monte carlo solution @xcite of the set of kinetic equations ( so - called semiconductor bloch equations ) derived in section [ ss.kd ] . in this case , the bloch representation discussed in section [ ss.qmp ] has been employed limiting the set of interband density - matrix elements in ( [ eq25 ] ) to the diagonal ones , i.e. @xmath194 .
in addition , incoherent scattering processes have been treated within the usual markov limit as discussed in @xcite . within such approximation scheme , the explicit form of the kinetic equations ( [ eq30 ] ) coincides with the sbe ( [ eq3 ] ) ( obtained for the bulk case ) @xcite , provided we replace the wavevector @xmath2 with @xmath195 , @xmath105 being the superlattice miniband index .    in the simulated experiments reviewed here
the following superlattice model has been employed : the energy dispersion and the corresponding wavefunctions along the growth direction ( @xmath196 ) are computed within the well known kronig - penney model @xcite , while for the in - plane direction ( @xmath197 ) an effective - mass model has been used .
starting from these three - dimensional wavefunctions @xmath198 , the various carrier - carrier as well as carrier - phonon matrix elements are numerically computed ( see equations ( [ eq21 ] ) and ( [ eq23 ] ) ) .
they are , in general , functions of the various miniband indices and depend separately on @xmath196 and @xmath197 , thus fully reflecting the anisotropic nature of the superlattice structure .
only coupling to gaas bulk phonons has been considered .
this , of course , is a simplifying approximation which neglects any superlattice effect on the phonon dispersion , such as confinement of optical modes in the wells and in the barriers , and the presence of interface modes @xcite .
however , while these modifications have important consequences for phonon spectroscopies ( like raman scattering ) , they are far less decisive for transport phenomena
.    we will start discussing the scattering - induced damping of bloch oscillations .
in particular , we will show that in the low - density limit this damping is mainly determined by optical - phonon scattering @xcite while at high densities the main mechanism responsible for the suppression of bloch oscillations is found to be carrier - carrier scattering @xcite .
this bloch - oscillation analysis in the time domain is also confirmed by its counterpart in the frequency domain .
as pointed out in section [ ss.qmp ] , the presence of bloch oscillations , due to a negligible scattering dynamics , should correspond to wannier - stark energy quantization .
this is confirmed by the simulated optical - absorption spectra , which clearly show the presence of the field - induced wannier - stark ladders@xcite .
all the simulated experiments presented in this section refer to the superlattice structure considered in ref .
@xcite : @xmath199   gaas wells and @xmath200   al@xmath201ga@xmath202as barriers .
for such a structure there has been experimental evidence for a thz - emission from bloch oscillations @xcite .    in the first set of simulated experiments an initial distribution of photoexcited carriers ( electron - hole pairs )
is generated by a @xmath203 fs gaussian laser pulse in resonance with the first - miniband exciton ( @xmath204 mev ) .
the strength of the applied electric field is assumed to be @xmath205 kv / cm , which corresponds to a bloch period @xmath176 of about @xmath206 fs .    in the low - density limit ( corresponding to a weak laser excitation ) , incoherent scattering processes do not alter the bloch - oscillation dynamics .
this is due to the following reasons : in agreement with recent experimental @xcite and theoretical @xcite investigations , for superlattices characterized by a miniband width smaller than the lo - phonon energy as for the structure considered here and for laser excitations close to the band gap , at low temperature carrier - phonon scattering is not permitted .
moreover , in this low - density regime carrier - carrier scattering plays no role : due to the quasi - elastic nature of coulomb collisions , in the low - density limit the majority of the scattering processes is characterized by a very small momentum transfer ; as a consequence , the momentum relaxation along the growth direction is negligible . as a result , on this picosecond time - scale the carrier system exhibits a coherent bloch - oscillation dynamics , i.e. a negligible scattering - induced dephasing .
this can be clearly seen from the time evolution of the carrier distribution as a function of @xmath196 ( i.e. averaged over @xmath207 ) shown in figure [ fig3sl ] . during the laser photoexcitation ( @xmath34 )
the carriers are generated around @xmath208 , where the transitions are close to resonance with the laser excitation . according to the acceleration theorem ( [ eq1sl ] ) ,
the electrons are then shifted in @xmath2-space .
when the carriers reach the border of the first brillouin zone they are bragg reflected .
after about @xmath206 fs , corresponding to the bloch period @xmath185 , the carriers have completed one oscillation in @xmath2-space .
as expected , the carriers execute bloch oscillations without loosing the synchronism of their motion by scattering .
this is again shown in figure [ fig3sl ] , where we have plotted : ( b ) the mean kinetic energy , ( c ) the current , and ( d ) its time derivative which is proportional to the emitted far field , i.e. the thz - radiation .
( it can be shown that , by neglecting zener tunneling , the intraband polarization @xmath159 in equation ( [ eq37 ] ) is proportional to the current . )
all these three quantities exhibit oscillations characterized by the same bloch period @xmath185 . due to the finite width of the carrier distribution in @xmath2-space
( see figure [ fig3sl](a ) ) , the amplitude of the oscillations of the kinetic energy is somewhat smaller than the miniband width .
since for this excitation condition the scattering - induced dephasing is negligible , the oscillations of the current are symmetric around zero , which implies that the time average of the current is equal to zero , i.e. no dissipation .    as already pointed out , this ideal bloch - oscillation regime is typical of a laser excitation close to gap in the low - density limit .
let us now discuss , still at low densities , the case of a laser photoexcitation high in the band .
figure [ fig4sl](a ) shows the thz - signal as obtained from a set of simulated experiments corresponding to different laser excitations @xcite .
the different traces correspond to the emitted thz - signal for increasing excitation energies .
we clearly notice the presence of bloch oscillations in all cases .
however , the oscillation amplitude and decay ( effective damping ) is excitation - dependent .    for the case of a laser excitation resonant with the first - miniband exciton considered above ( see figure [ fig3sl ] ) , we have a strong thz - signal .
the amplitude of the signal decreases when the excitation energy is increased .
additionally , there are also some small changes in the phase of the oscillations , which are induced by the electron - lo phonon scattering .    when the laser energy comes into resonance with the transitions between the second electron and hole minibands ( @xmath209 mev ) , the amplitude of the thz - signal increases again .
the corresponding thz - transients show an initial part , which is strongly damped and some oscillations for longer times that are much less damped . for a better understanding of these results ,
we show in figure [ fig4sl](b ) the individual thz - signals , originating from the two electron and two heavy - hole minibands for the excitation with @xmath210 mev .
the bloch oscillations performed by the electrons within the second miniband are strongly damped due to intra- and interminiband lo - phonon scattering processes @xcite .
since the width of this second miniband ( @xmath211 mev ) is somewhat larger than the lo - phonon energy , also intraminiband scattering is possible , whenever the electrons are accelerated into the high - energy region of the miniband .
the thz - signal originating from electrons within the first miniband shows an oscillatory behavior with a small amplitude and a phase which is determined by the time the electrons need to relax down to the bottom of the band .    at the same time , the holes in both minibands exhibit undamped bloch oscillations , since the minibands are so close in energy that for these excitation conditions no lo - phonon emission can occur .
the analysis shows that at early times the thz - signal is mainly determined by the electrons within the second miniband . at later times
the observed signal is due to heavy holes and electrons within the first miniband .
the above theoretical analysis closely resembles experimental observations obtained for a superlattice structure very similar to the one modelled here @xcite . in these experiments ,
evidence for thz - emission from bloch oscillations has been reported .
for some excitation conditions these oscillations are associated with resonant excitation of the second miniband .
the general behavior of the magnitude of the signals , the oscillations and the damping are close to the results shown in figure [ fig4sl ] .
finally , in order to study the density dependence of the bloch - oscillation damping , let us go back to the case of laser excitations close to gap .
figure [ fig5sl](a ) shows the total ( electrons plus holes ) thz - radiation as a function of time for three different carrier densities . with increasing carrier density , carrier - carrier scattering becomes more and more important : due to coulomb screening , the momentum transfer in a carrier - carrier scattering increases ( its typical value being comparable with the screening wavevector ) .
this can be seen in figure [ fig5sl](a ) , where for increasing carrier densities we realize an increasing damping of the thz - signal .
however , also for the highest carrier density considered here we deal with a damping time of the order of @xmath212 fs , which is much larger than the typical dephasing time , i.e. the decay time of the interband polarization , associated with carrier - carrier scattering .
the dephasing time is typically investigated by means of four - wave - mixing ( fwm ) measurements and such multi - pulse experiments can be simulated as well @xcite . from a theoretical point of view , a qualitative estimate of the dephasing time is given by the decay time of the `` incoherently summed '' polarization ( isp ) @xcite .
figure [ fig5sl](b ) shows such isp as a function of time for the same three carrier densities of figure [ fig5sl](a ) .
as expected , the decay times are always much smaller than the corresponding damping times of the thz - signals ( note the different time - scale in figures [ fig5sl](a ) and ( b ) ) . this difference , discussed in more detail in @xcite , can be understood as follows : the fast decay times of figure [ fig5sl](b ) reflect the interband dephasing , i.e. the sum of the electron and hole scattering rates .
in particular , for the coulomb interaction this means the sum of electron - electron , electron - hole , and hole - hole scattering . as for the case of bulk gaas discussed in section [ s.bulk ] , this last contribution is known to dominate and determines the dephasing time - scale . on the other hand ,
the total thz - radiation in figure [ fig5sl](a ) is the sum of the electron and hole contributions .
however , due to the small value of the hole miniband width compared to the electron one , the electron contribution will dominate .
this means that the thz damping in figure [ fig5sl](a ) mainly reflects the damping of the electron contribution .
this decay , in turn , reflects the intraband dephasing of electrons which is due to electron - electron and electron - hole scattering only , i.e. no hole - hole contributions .    from the above analysis
we can conclude that the decay time of the thz - radiation due to carrier - carrier scattering differs considerably from the corresponding dephasing times obtained from a fwm experiment : the first one is a measurement of the intraband dephasing while the second one reflects the interband dephasing .
for the case of bulk semiconductors , where the broadening of the photoexcited carrier distribution is mainly determined by the decay of the interband polarization ( interband dephasing ) while the subsequent energy broadening of the electron distribution is due to electron scattering only ( intraband dephasing ) ( see figure [ fig2bulk ] ) . ]
let us now discuss the frequency - domain counterpart of the bloch - oscillation picture considered so far .
similar to what happens in the time domain , for sufficiently high electric fields , i.e. when the bloch period @xmath176 becomes smaller than the dephasing time , the optical spectra of the superlattice are expected to exhibit the frequency - domain counterpart of the bloch oscillations , i.e. the wannier - stark energy quantization discussed in section [ ss.qmp ] . in the absence of coulomb interaction , the wannier - stark ladder absorption increases as a function of the photon energy in a step - like fashion .
these steps are equidistantly spaced .
their spacing , named wannier - stark splitting , is proportional to the applied electric field .
the simulated linear - absorption spectra corresponding to a superlattice structure with @xmath213   gaas wells and @xmath214   al@xmath201ga@xmath202as barriers are shown in figure [ fig6sl ] @xcite . as we can see , the coulomb interaction gives rise to excitonic peaks in the absorption spectra and introduces couplings between these wannier - stark states . such exciton peaks , which are no longer equidistantly spaced , are often referred to as excitonic wannier - stark ladders @xcite of the superlattice .    since for the superlattice structure considered in this simulated experiment @xcite the combined miniband width is larger than the typical two- and three - dimensional exciton binding energies , it is possible to investigate the quasi - three dimensional absorption behavior of the delocalized miniband states as well as localization effects induced by the electric field .    for the free - field case
, the electron and hole states are completely delocalized in our three - dimensional @xmath2-space .
the perturbation induced by the application of a low field ( here @xmath215 kv / cm ) , couples the states along the field direction and in the spectra the franz - keldysh effect , well known from bulk materials @xcite , appears : one clearly notices oscillations which increase in amplitude with the field and shift with @xmath216 from the @xmath217 and @xmath218 levels toward the center of the combined miniband .    for increasing field the potential drop over
the distance of a few quantum wells eventually exceeds the miniband width and the electronic states become more and more localized . despite the field - induced energy difference @xmath219 , the superlattice potential is equal for quantum wells separated by @xmath220 .
therefore , the spectra decouple into a series of peaks corresponding to the excitonic ground states of the individual electron - hole wannier - stark levels .
each wannier - stark transition contributes to the absorption with a pronounced @xmath221 exciton peak , plus higher bound exciton and continuum states .
the oscillator strength of a transition @xmath39 is proportional to the overlap between electron and hole wavefunctions centered at quantum wells @xmath41 and @xmath222 , respectively .
the analysis shows that this oscillator strength is almost exclusively determined by the amplitude of the electron wavefunction in quantum well @xmath223 since for fields in the wannier - stark regime the hole wavefunctions are almost completely localized over one quantum well due to their high effective mass ( see figure [ fig2sl ] ) .
thus , the oscillator strengths of transitions to higher @xmath224 become smaller with increasing @xmath224 and field .    at high fields ( here @xmath225 kv / cm )
the separation between the peaks is almost equal to @xmath226 .
for example , the peak of the @xmath227 transition which is shifted by the wannier - stark exciton binding energy with respect to the center of the combined miniband , demonstrates that the increasing localization also increases the exciton binding energy .
this increased excitonic binding reflects the gradual transition from a three- to a two - dimensional behavior , discussed in detail in @xcite .    for intermediate fields
there is an interplay between the wannier - stark and the franz - keldysh effect .
coming from high fields , first the wannier - stark peaks are modulated by the franz - keldysh oscillations . however , as soon as the separation @xmath228 between neighboring peaks becomes smaller than their spectral widths , the peaks can no longer be resolved individually so that only the franz - keldysh structure remains .
the importance of coulomb - correlation effects in optical spectra of semiconductors and their dependence on dimensionality has now been long recognized @xcite .
more recently , increasing interest has been devoted to one - dimensional ( 1d ) systems @xcite , prompted by promising advances in quantum - wire fabrication and application , e.g. quantum - wire lasers .
the main goal is to achieve structures with improved optical efficiency as compared to two - dimensional ( 2d ) and three - dimensional ( 3d ) ones .
a common argument in favour of this effort is based on the well known van hove divergence in the 1d joint density - of - states ( dos ) , which is expected to give rise to very sharp peaks in the optical spectra of 1d structures .
such prediction is however based on free - carrier properties of ideal 1d systems and it ignores coulomb - correlation effects .
early theoretical investigations by ogawa and coworkers @xcite , based on a 1d single - subband model of the wires , showed that the inverse - square - root singularity in the 1d dos at the band edge is smoothed when excitonic effects are taken into account .    in this section
, we will review recent theoretical results @xcite based on a full 3d description of realistic quantum - wire structures made available by the present technology , such as structures obtained by epitaxial growth on non - planar substrates ( v - shaped wires ) @xcite or by cleaved - edge quantum well overgrowth ( t - shaped wires ) @xcite . on the one hand
, this approach allows an accurate determination of 1d - exciton binding energies ; on the other hand , it allows us to investigate also the non linear ( gain ) regime . in both cases ,
one finds a strong suppression of the 1d band - edge singularity , in agreement with previous results based on simplified 1d models @xcite .
this theoretical approach @xcite is based on the general kinetic theory presented in section [ s.tb ] , which allows a full 3d description of coulomb interaction within a multiminiband scheme . in particular , we focus on the quasi - equilibrium regime where the solution of the coupled kinetic equations ( [ eq30 ] ) simply reduces to the solution of the interband - polarization equation .
this is performed by direct numerical evaluation of the polarization eigenvalues and eigenvectors @xcite , which fully determine the absorption spectrum as well as the exciton wavefunctions .
the main ingredients entering this calculation are the single - particle energies and wavefunctions , obtained numerically for the 2d confinement potential deduced , e.g. , from tem as in @xcite .
the above theoretical scheme has been applied to realistic v- and t - shaped wire structures . in particular , here we show results for the gaas / algaas v - wire structure of ref .
@xcite , whose cross - section is shown in figure [ fig1qwr ] .
let us start considering the optical response of the system in the low - density limit . in figure [ fig2qwr ]
we show the linear - absorption spectra obtained when taking into account the lowest wire transition only .
results of our coulomb - correlated ( cc ) approach are compared to those of the free - carrier ( fc ) model . as we can see
, electron - hole correlation introduces two important effects : first , the excitonic peak arises below the onset of the continuum , with a binding energy of about @xmath229  mev , in excellent agreement with recent experiments @xcite .
second , one finds a strong suppression of the 1d dos singularity .
a detailed analysis of the physical origin of such suppression @xcite has shown that the quantity which is mainly modified by cc is the oscillator strength ( os ) . in figure [ fig3qwr](a )
the ratio between the cc and fc os is plotted as a function of excess energy ( solid line ) .
this ratio is always less than one and goes to zero at the band edge , and reflects a sort of hole in the electron - hole correlation function @xmath230 as shown in figure [ fig3qwr](b ) .
such vanishing behaviour is found to dominate the 1d dos singularity and , as a result , the absorption spectrum exhibits a regular behaviour at the band edge ( solid line in figure [ fig2qwr ] ) .
the above analysis shows that also for realistic quantum - wire structures electron - hole correlation leads to a strong suppression of the 1d band - edge singularity in the linear - absorption spectrum , contrary to the 2d and 3d cases .
most of the potential quantum - wire applications , i.e. 1d lasers and modulators , operate in strongly non - linear - response regimes @xcite . in such conditions ,
the above linear - response analysis has to be generalized taking into account additional factors as : ( i ) screening effects , ( ii ) band renormalization , ( iii ) space - phase filling .
figure [ fig4qwr ] reports quantitative results for non - linear absorption spectra of realistic v - shaped wire structures at different carrier densities at room temperature . as a reference
we also show the results obtained by including the lowest subband only [ figure [ fig4qwr](a ) ] . in the low - density limit (
case a : @xmath231 @xmath232 ) we clearly recognize the exciton peak .
with increasing carrier density , the strength of the excitonic absorption decreases due to phase - space filling and screening of the attractive electron - hole interaction , and moreover the band renormalization leads to a red - shift of the continuum . at a density of @xmath233 @xmath232 ( case d ) the spectrum already exhibits a negative region corresponding to stimulated emission , i.e. gain regime .
as desired , the well pronounced gain spectrum extends over a limited energy region ( smaller than the thermal energy ) ; however , its shape differs considerably from the ideal fc one ( curve marked with diamonds in the same figure ) .
in particular , the band - edge singularity in the ideal fc gain spectrum is clearly smeared out by electron - hole correlation .
the overall effect is a broader and less pronounced gain region .
finally , figure [ fig4qwr](b ) shows the non - linear spectra corresponding to the realistic case of a 12-subband v - shaped wire . in comparison with the single - subband case [ figure [ fig4qwr](a ) ] ,
the multisubband nature is found to play an important role in modifying the typical shape of the gain spectra , which for both cc and fc models result to extend over a range much larger than that of the single - subband case for the present wire geometry .
in addition , the coulomb - induced suppression of the single - subband singularities , here also due to intersubband - coupling effects , tends to reduce the residual structures in the gain profile .
therefore , even in the ideal case of a quantum wire with negligible disorder and scattering - induced broadening , our analysis indicates that , for the typical structure considered , the shape of the absorption spectra over the whole density range differs considerably from the sharp fc spectrum of figure [ fig2qwr ] .
this tells us that , in order to obtain sharp gain profiles , one of the basic steps in quantum - wire technology is to produce structures with increased subband splitting .
however , the disorder - induced inhomogeneous broadening , not considered here , is known to increase significantly the spectral broadening and this effect is expected to increase with increasing subband splitting .
therefore , extremely - high - quality structures ( e.g. single - monolayer control ) seem to be the only possible candidates for successful quantum - wire applications .
a review of coherent phenomena in optically - excited semiconductors has been presented .
our analysis has allowed the identification of two classes of phenomena : _ optically - induced _ and _ coulomb - induced _ coherent phenomena .
we have shown that both classes can be described in terms of a unique theoretical framework based on the density - matrix formalism . due to its generality
, such quantum - kinetic approach allows a realistic description of coherent as well as incoherent , i.e. phase - breaking , processes , thus providing quantitative information on the coupled coherent vs. incoherent carrier dynamics in photoexcited semiconductors .
the primary goal of the paper was to discuss the concept of quantum - mechanical phase coherence as well as its relevance and implications on semiconductor physics and technology .
in particular , we have analyzed the dominant role played by optically induced phase coherence on the process of ultrafast carrier photogeneration .
we have then discussed typical field - induced coherent phenomena in semiconductor superlattices , e.g. bloch oscillations and the corresponding thz radiation , as well as their dephasing dynamics . finally , we have analyzed the dominant role played by coulomb correlation on the linear and non - linear optical spectra of realistic quantum - wire structures , namely the coulomb - induced suppression of ideal 1d - band - edge singularities .
our analysis shows that the conventional separation between coherent and incoherent regimes is no longer valid for most of the recent ultrafast optical experiments in semiconductors .
the reason is that on such extremely short time - scales the carrier dynamics is the result of a strong interplay between coherence and relaxation , thus preventing a time - scale separation between photogeneration and relaxation dynamics .
similar considerations apply to the various coulomb - induced phenomena : the strong modifications induced by coulomb correlation on the optical response of low - dimensional semiconductors play a significant role on the phase - breaking relaxation dynamics as well .
it is thus evident that any theoretical analysis of the optical response of semiconductor heterostructures must provide a proper description of both coherent and incoherent phenomena as well as of their mutual coupling on the same kinetic level .
i am particularly grateful to tilmann kuhn for his essential contribution in understanding most of the ideas and concepts discussed in this topical review .
i wish to thank stephan w. koch , torsten meier , and peter thomas , as well as elisa molinari , for their relevant contributions to the research activity reviewed in the paper .
i am also grateful to roberto cingolani , thomas elsaesser , alfred leitenstorfer , and peter e. selbmann for stimulating and fruitful discussions .
j. shah , _ ultrafast spectroscopy of semiconductors and semiconductor nanostructures _
( springer , berlin , 1996 ) .
l. allen , j.h .
eberly , _ optical resonance and two - level atoms _ ( interscience , new york 1975 ) .
m. sargent iii , m.o .
scully , w.e .
lamb jr . , _ laser physics _ ( addison - wesley , new york 1977 ) .
shen , _ the principles of nonlinear optics _ ( wiley , new york 1984 ) .
levenson , s.s .
kano , _ introduction to nonlinear laser spectroscopy _
( academic , boston 1988 ) .
p. meystre , m. sargent iii , _ elements of quantum optics _ , 2nd edn .
( springer , berlin , heidelberg 1991 ) .
mills , _ nonlinear optics _ ( springer , berlin , heidelberg 1991 ) .
h. haug and s.w .
koch , _ quantum theory of the optical and electronic properties of semiconductors _
, 3rd edn .
( world scientific , singapore 1994 ) .
w. demtroeder , _ laser spectroscopy _ ,
( springer , berlin , heidelberg 1996 ) .
f. henneberger , s. schmitt - rink , e.o .
gbel ( eds . ) , _ optics of semiconductor nanostructures _
( akademie verlag , berlin 1993 ) .
phillips ( ed . ) _ coherent optical processes in semiconductors _ , nato asi series b : physics , vol .
30 ( plenum , new york 1994 ) .
hahn , phys .
rev . * 80 * , 580 ( 1950 ) .
kurnit , i.d .
abella , and s.r .
hartmann , phys .
* 13 * , 567 ( 1964 ) .
abella , n.a .
kurnit , and s.r .
hartmann , phys .
* 141 * , 391 ( 1966 ) .
j. shah and r.c . c. leite , phys .
rev . lett . * 22 * , 1304 ( 1969 ) .
shank , r.l .
fork , r.f .
leheny , and j. shah , phys .
* 42 * , 112 ( 1979 ) . j. shah , b. deveaud , t.c .
damen , w.t .
tsang , a.c .
gossard , and p. lugli , phys .
59 * , 2222 ( 1987 ) .
t. elsaesser , j. shah , l. rota , and p. lugli , phys .
lett . * 66 * , 1757 ( 1991 ) .
ulbrich , j.a .
kash , and j.c .
tsang , phys .
lett . * 62 * , 949 ( 1989 ) .
peterson and s.a .
lyon , phys .
65 * , 760 ( 1990 ) .
snoke , w.w .
rhle , y .- c .
lu , and e. bauser , phys .
. lett . * 68 * , 990 ( 1992 ) .
oudar , a. migus , d. hulin , g. grillon , j. etchepare , and a. antonetti , phys .
rev . lett .
* 53 * , 384 ( 1984 ) .
foing , d. hulin , m. joffre , m.k .
jackson , j .- l .
oudar , c. tanguy , and m. combescot , phys .
lett . * 68 * , 110 ( 1992 ) .
a. leitenstorfer , c. frst , a. laubereau , w. kaiser , g. trnkle , and g. weimann , phys .
. lett . * 76 * , 1545 ( 1996 ) .
s. lutgen , r. kaindl , m. woerner , t. elsaesser , a. hase , h. knzel , m. gulia , d. meglio , and p. lugli , phys .
lett . * 77 * , 3657 ( 1996 ) .
m. joschko , m. woerner , t. elsaesser , e. binder , t. kuhn , r. hey , h. kostial , and k. ploog , phys . rev .
* 78 * , 737 ( 1997 ) . c. jacoboni and p. lugli , _ the monte carlo method for semiconductor device simulations _
( springer , wien 1989 ) .
s.m . goodnick and p. lugli , in _ hot carriers in semiconductor nanostructures : physics and applications _ , edited by j. shah ( academic , san diego 1992 ) , p. 191
. f. rossi , p. poli , and c. jacoboni , semicond .
* 7 * , 1017 ( 1992 ) .
a. mysyrowicz , d. hulin , a. antonetti , a. migus , w.t .
masselink , and h. morko , phys .
56 * , 2748 ( 1986 ) .
n. peyghambarian , s.w .
koch , m. lindberg , b.d .
flgel , m. joffre , phys .
* 62 * , 1185 ( 1989 ) .
knox , d.s .
chemla , d.a.b .
miller , j.b .
stark , and s. schmitt - rink , phys .
* 1989 * , 1189 ( 1989 ) .
kundiff , a. knorr , j. feldmann , s.w .
koch , e.o .
gbel , h. nichel , phys .
73 * , 1178 ( 1994 ) .
becker , h.l .
fragnito , c.h .
brito cruz , r.l .
fork , j.e .
cunningham , j.e .
henry , and c.v .
shank , phys .
lett . * 61 * , 1647 ( 1988 ) .
y. masumoto , s. shionoya , and t. takagahara , phys .
lett . * 51 * , 923 ( 1983 ) .
l. schultheis , j. kuhl , a. honold , and c.w .
tu , phys .
57 * , 1635 ( 1986 ) ; phys .
* 57 * , 1797 ( 1986 ) .
g. noll , u. siegner , s.g .
shevel , and e.o .
gbel , phys .
lett . * 64 * , 792 ( 1990 ) .
v. langer , h. stolz , and w. von  der osten , phys .
lett . * 64 * , 854 ( 1990 ) .
gbel , k. leo , t.c .
damen , j. shah , s. schmitt - rink , w. schfer , j.f .
mller , and k. khler , phys .
rev . lett . * 64 * , 1801 ( 1990 ) .
d. frhlich , a. kulik , b. uebbing , a. mysyrowicz , v. langer , h. stolz , and w. von  der osten , phys .
* 67 * , 2343 ( 1991 ) . h. stolz , v. langer , e. schreiber , s.a .
permogorov , w. von der osten , phys .
lett . * 67 * , 679 ( 1991 ) .
k. leo , j. shah , e.o .
gbel , t.c .
damen , s. schmitt - rink , w. schfer , and k. khler , phys . rev .
lett . * 66 * , 201 ( 1991 ) .
j. feldmann , t. meier , g. von plessen , m. koch , e.o .
gbel , p. thomas , g. bacher , c. hartmann , h. schweizer , w. schfer , and h. nickel , phys .
* 70 * , 3027 ( 1993 ) . c. waschke , h.g .
roskos , r. schwedler , k. leo , h. kurz , and k. khler , phys .
lett . * 70 * , 3319 ( 1993 ) .
k. leo , m. wegener , j. shah , d.s .
chemla , e.o .
gbel , t.c .
damen , s. schmitt - rink , and w. schfer , phys .
65 * , 1340 ( 1990 ) .
s. weiss , m .- a .
mycek , j .- y . bigot , s. schmitt - rink , and d.s .
chemla , phys .
* 69 * , 2685 ( 1992 ) . d .- s .
kim , j. shah , j.e .
cunningham , t.c .
damen , w. schfer , m. hartmann , and s. schmitt - rink , phys .
* 68 * , 1006 ( 1992 ) . d .- s .
kim , j. shah , t.c .
damen , w. schfer , f. jahnke , s. schmitt - rink , and k. khler , phys .
* 69 * , 2725 ( 1992 ) .
roskos , m.c .
nuss , j. shah , k. leo , d.a.b .
miller , a.m. fox , s. schmitt - rink , and k. khler , phys .
lett . * 68 * , 2216 ( 1992 ) .
planken , m.c .
nuss , i. brener , k.w .
goossen , m.s.c .
luo , s.l .
chuang , and l. pfeiffer , phys .
lett . * 69 * , 3800 ( 1992 ) . c. comte and g. mahler , phys .
rev.b * 34 * , 7164 ( 1986 ) .
s. schmitt - rink , c. ell , and h. haug , phys .
rev . b*33 * , 1183 ( 1986 ) .
s. schmitt - rink , d.s .
chemla , and h. haug , phys .
b*37 * , 941 ( 1988 ) .
k. henneberger and h. haug , phys .
b*38 * , 9759 ( 1988 ) .
kuznetsov , phys .
rev . b*44 * , 8721 ( 1991 ) .
h. haug and c. ell , phys .
b*46 * , 2126 ( 1992 ) .
i. balslev , r. zimmermann , and a. stahl , phys .
b*40 * , 4095 ( 1989 ) .
s. schmitt - rink and d.s .
chemla , phys .
* 57 * , 2752 ( 1986 ) .
m. lindberg and s.w .
koch , phys .
b*38 * , 3342 ( 1988 ) .
m. wegener , d.s .
chemla , s. schmitt - rink , and w. schfer , phys .
rev . a*42 * , 5675 ( 1990 ) .
w. schfer , f. jahnke , and s. schmitt - rink , phys .
rev . b*47 * , 1217 ( 1993 ) .
e. binder , t. kuhn , and g. mahler , phys . rev . * b50 * , 18319 ( 1994 ) . o.  hess and t.  kuhn , phys .
a * 54 * , 3347 ( 1996 ) ; ibid . 3360 ( 1996 ) .
t. kuhn , in _ theory of transport properties of semiconductor nanostructures _ , edited by e. schll ( chapman & hall , london 1997 ) .
r.l . fork , c.h .
brito cruz , p.c .
becker , and c.v .
shank , phys .
* 12 * , 483 ( 1987 ) .
t. kuhn and f. rossi , phys .
lett . * 69 * , 977 ( 1992 ) .
t. kuhn and f. rossi , phys .
b * 46 * , 7496 ( 1992 ) .
f. rossi , s. haas , and t. kuhn , semicond .
* 9 * , 411 ( 1994 ) .
f. rossi , s. haas , and t. kuhn , phys .
lett . * 72 * , 152 ( 1994 ) .
s. haas , f. rossi , and t. kuhn , phys .
b * 53 * , 12855 ( 1996 ) .
a. lohner , k. rick , p. leisching , a. leitenstorfer , t. elsaesser , t. kuhn , f. rossi , and w. stolz , phys .
lett . * 71 * , 77 ( 1993 ) .
a. leitenstorfer , a. lohner , k. rick , p. leisching , t. elsaesser , t. kuhn , f. rossi , w. stolz , and k. ploog , phys .
b * 49 * , 16372 ( 1994 ) .
a. leitenstorfer , a. lohner , t. elsaesser , s. haas , f. rossi , t. kuhn , w. klein , g. boehm , g. traenkle , and g. weimann , phys .
lett . * 73 * , 1687 ( 1994 ) .
t. kuhn , f. rossi , a. leitenstorfer , a. lohner , t. elsaesser , w. klein , g. boehm , g. traenkle , and g.w .
weimann , in _ hot carriers in semiconductors _ , edited by k. hess , j .-
leburton , and u. ravaioli ( plenum press , new york , 1996 ) , p.  199 .
a. leitenstorfer , t. elsaesser , f. rossi , t. kuhn , w. klein , g. boehm , g. traenkle , and g.w .
weimann , phys .
b * 53 * , 9876 ( 1996 ) .
f. bloch , phys .
rev . * 70 * , 460 ( 1946 ) .
kash and j.c .
tsang , in _ light scattering in solids vi _ , edited by m.  cardona and g.gntherodt , springer , berlin ( 1989 ) , p.  423 .
w. ptz and p. kocevar , phys .
b * 28 * , 7040 ( 1983 ) .
w. quade , e. schll , f. rossi , and c. jacoboni , phys .
b * 50 * , 7398 ( 1994 ) .
f. rossi , r. brunetti , and c. jacoboni , in _ hot carriers in semiconductor nanostructures : physics and applications _ , edited by j. shah ( academic press inc .
, boston , 1992 ) , p.  153 .
r. brunetti , c. jacoboni , and f. rossi , phys .
b * 39 * , 10781 ( 1989 )
tran thoai and h. haug , phys .
b * 47 * , 3574 ( 1993 ) .
sayed , l. bnyai , and h. haug , phys .
rev . * b50 * , 1541 ( 1994 ) .
j. schilp , t. kuhn , and g. mahler , phys .
b * 50 * , 5435 ( 1994 ) . v. meden , c. whler , j. fricke , and k. schnhammer , phys . rev . * b52 * , 5624 ( 1995 ) .
kane , k.w .
sun , and s.a .
lyon , semicond .
* 9 * , 697 ( 1994 )
kash , phys . rev . * b51 * , 4680 ( 1995 ) .
f. bloch , z. phys .
* 52 * , 555 ( 1928 ) . c. zener , proc .
* 145 * , 523 ( 1934 ) .
houston , phys . rev . * 57 * , 184 ( 1940 ) . e.o .
kane , j. phys .
solids * 12 * , 181 ( 1959 ) p.n .
argyres , phys . rev . * 126 * , 1386 ( 1962 ) . g.h .
wannier , phys . rev . * 117 * , 432 ( 1960 ) .
j. zak , phys .
lett . * 20 * , 1477 ( 1968 ) . c. kittel , _ quantum theory of solids _
( wiley , new york , 1963 ) , p. 190 . j.b . krieger and g.j .
iafrate , phys .
b * 33 * , 5494 ( 1986 )
. g. nenciu , rev .
phys . * 63 * , 91 ( 1991 ) .
g. bastard , _ wave mechanics of semiconductor heterostructures _ ,
les editions de physique ( les ulis , france , 1989 ) .
mendez , f. agullo - rueda , and j.m .
hong , phys .
lett . * 60 * , 2426 ( 1988 ) .
p. voisin , j. bleuse , c. bouche , s. gaillard , c. alibert , and a , regreny , phys .
lett . * 61 * , 1639 ( 1988 ) .
j. feldmann , k. leo , j. shah , d.a.b .
miller , j.e .
cunningham , t. meier , g. von plessen , a. schulze , p. thomas , and s. schmitt - rink , phys .
b * 46 * , 7252 ( 1992 ) . g. von plessen and p. thomas , phys . rev .
b * 45 * , 9185 ( 1992 ) .
k. leo , p.h .
bolivar , f. brggemann , r. schwedler , solid state commun . * 84 * , 943 ( 1992 ) .
p. leisching , p. haring bolivar , w. beck , y. dhaibi , f. bruggemann , r. schwedler , h. kurz , k. leo , and k. khler , phys .
b * 50 * , 14389 ( 1994 ) .
t. dekorsy , p. leisching , k. kohler , and h. kurz , phys .
b * 50 * , 8106 ( 1994 ) .
t. dekorsy , r. ott , h. kurz , and k. kohler , phys .
b * 51 * , 17275 ( 1995 ) .
roskos , c. waschke , r. schwedler , p. leisching , y. dhaibi , h. kurz , and k. khler , superlattices and microstructures * 15 * , 281 ( 1994 ) . f. rossi , in _ theory of transport properties of semiconductor nanostructures _ , edited by e. schll ( chapman & hall , london 1997 ) .
f. rossi , t. meier , p. thomas , s.w .
koch , p.e .
selbmann , and e. molinari , phys .
b * 51 * , 16943 ( 1995 ) .
f. rossi , t. meier , p. thomas , s.w .
koch , p.e .
selbmann , and e. molinari , in _ hot carriers in semiconductors _ , edited by k. hess , j .-
leburton , and u. ravaioli ( plenum press , new york , 1996 ) , p.  157 .
t. meier , f. rossi , p. thomas , and s.w .
koch , phys .
lett . * 75 * , 2558 ( 1995 ) .
je , t. meier , f. rossi , and s.w .
koch , appl .
lett . * 67 * , 2978 ( 1995 ) .
koch , t. meier , t. stroucken , a. knorr , j. hader , f. rossi , and p. thomas , in _ microscopic theory of semiconductors : quantum kinetics , confinement and lasers _
, edited by s.w .
koch ( world scientific , singapore , 1995 ) , p.  81 .
f. rossi , m. gulia , p.e .
selbmann , e. molinari , t. meier , p. thomas , and s.w .
koch , in _ proc .
23rd icps , berlin , germany _ , edited by m. scheffler and r. zimmermann ( world scientific , singapore , 1996 ) , p.  1775 .
h. rcker , e. molinari , and p. lugli , phys .
b * 45 * , 6747 ( 1992 ) .
e. molinari , in _ confined electrons and photons : new physics and applications _ , edited by e. burstein and c. weisbuch ( plenum , new york , 1994 ) .
g. von plessen , t. meier , j. feldmann , e.o .
gbel , p. thomas , k.w .
goossen , j.m .
kuo , and r.f .
kopf , phys .
b * 49 * , 14058 ( 1994 ) . m.m .
dignam and j.e .
sipe , phys .
* 64 * , 1797 ( 1990 ) .
see e.g. _ proc .
4th internat . conf . on optics of excitons in confined systems _
, il nuovo cimento d vol .
17 ( 1995 ) . for a review see : r.  cingolani and r.  rinaldi , rivista nuovo cimento * 16 * , 1 ( 1993 ) .
t. ogawa and t. takagahara , phys . rev .
* b43 * , 14325 ( 1991 ) .
t. ogawa and t. takagahara , phys . rev . * b44 * , 8138 ( 1991 ) .
f. rossi and e. molinari , phys .
76 * , 3642 ( 1996 ) . f. rossi and e. molinari , phys .
rev . * b53 * , 16462 ( 1996 ) .
f. rossi and e. molinari , in _ proc .
23rd icps , berlin , germany _ , edited by m. scheffler and r. zimmermann ( world scientific , singapore , 1996 ) , p.  1161 .
r.  rinaldi , r. cingolani , m. lepore , m. ferrara , i.m .
catalano , f. rossi , l. rota , e. molinari , p. lugli , u. marti , d. martin , f. morrier - gemoud , p. ruterana , and f.k .
reinhart , phys .
lett . * 73 * , 2899 ( 1994 ) .
t. someya , h. akiyama , and h. sakaki , phys .
76 * , 2965 ( 1996 ) .