the spatiotemporal dynamics of semiconductor lasers can be simulated successfully by semiclassical maxwell - bloch equations without including any quantum effects in the light field ( for an overview of the theory and modeling see @xcite and references therein ) .
the classical treatment of the light field is justified by the high intensity of the laser light well above threshold . however , the incoherent noise required by the uncertainty principle in both the electrical dipole of the semiconductor medium and the light field itself is of significant importance when several cavity modes compete or when the laser is close to threshold .
photon rate equations for multi - mode operation of semiconductor lasers show that the spontaneous emission terms may contribute significantly to the spectral characteristics of the light field emitted by the laser @xcite .
such models assume a fixed mode structure determined entirely by the empty cavity
. this assumption does not apply to gain guided lasers and to unstable resonators , however @xcite . in these cases
it is therefore desirable to explicitly describe the spatial coherence of spontaneous emission .
the spatial coherence of spontaneous emission and amplified spontaneous emission is even more important in devices close to threshold or devices with a light field output dominated by spontaneous emission such as superluminescent diodes and ultra low threshold semiconductor lasers @xcite .
ultra - low threshold lasers may actually operate in a regime of negative gain where spontaneous emission is the only source of radiation @xcite .
a description of the light field emitted by such devices therefore requires an explicit description of the spatial coherence in spontaneous emission as well .
an approach to the consistent inclusion of the quantum noise properties of the light field in the dynamics of semiconductor laser diodes using nonequilibrium green s functions has been presented in @xcite . in this approach , the linear optical response of the medium
is varied as a function of the time - dependent electron - hole distributions .
although the non - equilibrium green s function presents an elegant solution for the description of many - body effects@xcite , the representation of the interband dipole dynamics by green s functions causes a non - markovian memory effect which is difficult to handle and is therefore usually neglected @xcite . moreover , the need to determine the green s function corresponding to the dynamically varying carrier distribution requires a computational effort far greater than that required for the integration of the corresponding maxwell - bloch equations .
therefore , as stated in @xcite , an exact analytical investigation of the spatial mode structures in realistic cavities using non - equilibrium green s functions is out of reach . in order to simulate the spatiotemporal dynamics of multi mode operation , of lasers near threshold , low threshold lasers or superluminescent diodes , it is therefore desireable to formulate an alternative approach to the problem of spontaneous emission and amplified spontaneous emission in such devices which is based on maxwell - bloch equations . by including the spatiotemporal dynamics of the interband dipole in such equations ,
non - markovian terms are avoided and the quantum mechanical equations may be integrated in a straightforward manner .
the starting point for our description of quantum noise effects is the dynamics of quantum mechanical operators of the field and carrier system .
since the operator dynamics of the carrier system have been investigated in the context of maxwell - bloch equations before @xcite and the light field equations correspond exactly to the classical maxwell s equations , it is possible to focus only on the local light - matter interaction . once the properties of this interaction are formulated in terms of the expectation values of field - field correlations , dipole - field correlations , carrier densities , fields and dipoles , the dynamics of the carrier system and the light field propagation may be added .    in section [ sec : lci ] , the quantum dynamics of the interaction between the light field and the carrier system is formulated in terms of wigner distributions for the carriers and of spatially continuous amplitudes for the light field .
the equations are formulated for both bulk material and for quantum wells including the effects of anisotropic coupling to the polarization components of the light field .
section [ sec : cdyn ] summarizes the effects of the dynamics of the electron - hole system in the semiconductor material .
the light field dynamics are introduced in section [ sec : max ] . by quantizing maxwell s equation ,
the coupling constant @xmath1 introduced in section [ sec : lci ] is expressed in terms of the interband dipole matrix element .
the complete set of quantum maxwell - bloch equations is presented in section [ sec : qmbe ] .
based on this general formulation , specific approximate versions for quantum well edge emitting and vertical cavity surface emitting lasers are derived .
the possibility of including two time correlations in the quantum maxwell - bloch equations is discussed and equations are given for the case of vertical cavity surface emitting lasers . in section [ sec : ase ] , analytical results for the spectra of gain and spontaneous emission in quantum wells as well as the spontaneous emission factor @xmath0 and the far field pattern of amplified spontaneous emission in broad area quantum well lasers are presented .
section [ sec : concl ] concludes the article .
in following , we will describe the active semiconductor medium in terms of an isotropic two - band model where , for the case of the holes , a suitably averaged effective mass is taken @xcite .
a generalization to more bands is straightforward . in terms of the local annihilation operators for photons ( @xmath2 ) , electrons ( @xmath3 ) , and holes ( @xmath4 ) ,
the hamiltonian of the light - carrier interaction can be written as @xmath5 the operator dynamics associated with this hamiltonian are then given by    @xmath6    the discrete positions @xmath7 correspond to the lattice sites of the bravais lattice describing the semiconductor crystal .
each lattice site actually represents the spatial volume @xmath8 of the wigner - seitz cell of the lattice . for zincblende crystal structure , this volume is equal to one quarter of the cubed lattice constant . in the case of algaas structures
the lattice constant is about @xmath9 m and @xmath10 @xcite .
the photon annihilation operator @xmath2 therefore describes the annihilation of a photon within a volume @xmath8 . here , we will focus on the light - carrier interaction and the quantum noise contributions responsible for spontaneous emission .
for that purpose , we extend the semiclassical description by including not only the expectation values of the field and dipole operators , @xmath11 and @xmath12 , respectively , but also the field - field correlations @xmath13 and the field - dipole correlation @xmath14 . the factorized equations of motion then read    @xmath15    note that this set of equations already represents a closed description of the field dynamics . if , as in many experimental configurations , the absolute phase of the light field and dipole operators may be considered unknown , these equations are sufficient for a description of the light - carrier interaction .
however , when two time correlations are of interest or in the case of coherent excitation by injection of an external laser it may also be necessary to additionally consider the dynamics of the field and dipole expectation values , i.e. , @xmath16      in the following , we will briefly discuss the implications of the factorization performed in the derivation of ( [ eq : factdyn ] ) . in order to formulate the dynamics of the light - matter interaction without including higher order correlations ,
three terms have been factorized in the time derivative of the field - dipole correlation ( [ eq : factdynbcd ] ) .
the factorizations are    @xmath17    no additional factorizations are necessary in the density dynamics of photons , electrons and holes .
the three factorizations are based on the assumption of statistical independence between the densities of photons , electrons and holes .
since we are not considering fluctuations in the particle densities , this is a necessary assumption .
equations ( [ eq : fact1 ] ) and ( [ eq : fact2 ] ) separate the photon density from the carrier densities .
these terms represent stimulated emission processes .
therefore , a correlation of the photon density with the carrier densities would lead to a modified stimulated emission rate .
below threshold , this effect will be small because the amplified spontaneous emission is distributed over many modes such that the local correlations between photon and carrier densities are weak . above threshold , the photon number fluctuations in the lasing mode cause relaxation oscillations .
the photon number fluctuations are nearly ninety degrees out of phase with the carrier number fluctuations .
therefore , the time averaged correlation is still negligible .    equation ( [ eq : fact3 ] ) separates the electron and hole densities .
this term represents the spontaneous emission caused by the simultaneous presence of electrons and holes in the same location .
although it is reasonable to assume that the high rate of scattering at high carrier densities effectively reduce all electron - hole correlations to zero , it is important to note that the interband dipole @xmath18 implies a phase correlation between the electrons and the holes .
in fact , the spontaneous emission term factorized according to equation ( [ eq : fact3 ] ) originates from the dipole - dipole correlation @xmath19 . note that this term could also be factorized into the product of dipole operators @xmath20 .
the dynamics of the field - field and the field - dipole correlations are then identical to the dynamics of the products of the fields and dipoles . therefore ,
that factorization corresponds to the approximations of the conventional maxwell - bloch equations such as described in @xcite which do not rigorously include spontaneous emission .    generally , spontaneous emission must always arise from random phase fluctuations .
these are given by the product of electron and hole densities . while the phase dependent dipole relaxes quickly due to scattering events , the carrier densities are preserved during scattering .
therefore    @xmath21    is usually a good assumption in semiconductor systems .
note that this assumption does fail in the case of low carrier densities and high dipole inducing fields .
however , this case only occurs if the light field is injected from an external source . in semiconductor lasers and in light emitting diodes , the major contribution to the dipole - dipole correlations stems from the product of electron and hole densities . to check the statistical independence of photon , electron , and hole densities , it is also convenient to check the corresponding inequality for the three particle coherence represented by the field - dipole correlation , @xmath22    thus , if a calculation does not fulfill this requirement , particle density correlations additionally have to be taken into account .      in order to connect the light - carrier interaction to the highly dissipative carrier transport equations , it is practical to transform the carrier and dipole densities using wigner transformations @xcite .
replacing the discrete density matrices by continuous ones obtained by polynomial interpolation will allow e.g.  for numerical purposes an arbitrary choice of the discretization scales , which generally will be much larger than a lattice constant .
analytically , it permits an application of differential operators .
physically , the particle densities are smooth functions over distances of several lattice constants .
a coherence length shorter than e.g. ten lattice constants would require @xmath23 states with @xmath24 of at least one twentieth of the brilloin zone diameter . in typical laser devices ,
however , the electrons and holes all accumulate near the fundamental gap at @xmath25 .
therefore , it is simply a matter of convenience to define the continuous densities such that    @xmath26    these continuous functions may then be transformed into wigner functions by    @xmath27    the normalization of these wigner functions has been chosen in such a way that a value of one represents the maximal phase space density possible for fermions , that is one particle per state .
since the density of states in the six - dimensional phase space given by @xmath28 and @xmath23 is @xmath29 , a factor of @xmath29 will appear whenever actual carrier densities need to be obtained from the wigner functions .
however , the normalization in terms of the maximal possible phase space density is convenient because it represents the probability that a quantum state in a given region of phase space is occupied .
therefore , the wigner distribution corresponding to the thermal equilibrium of a given particle density is directly given by the fermi function .    to deal with the light field dynamics in the same manner
, the field and field - field correlation variables must also be defined on a continuous length scale . in order to obtain photon densities ,
we define    @xmath30    finally , the dipole - field correlation must be defined accordingly , such that @xmath31 with these new definitions , the light - carrier interaction dynamics can now be expressed in a form which considers both the position and the momentum of the electrons and holes .
the dynamics of emission and absorption now reads    @xmath32 \left.\frac{\partial}{\partial t}{\cal e } ( { \bf r})\right |_{cl } & = & -i g_0\frac{\sqrt{\nu_0}}{8\pi^3}\int d^3{\bf k}\ ; p({\bf r},{\bf k } ) \\
\left.\frac{\partial}{\partial t } p({\bf r},{\bf k})\right |_{cl } & = & ig_0\sqrt{\nu_0}\;\frac{1}{8\pi^3}\!\int\ !
d^3 { \bf x}\!\int\!d^3 { \bf q}\ ; e^{i{\bf qx } } \nonumber \\ & & \times               \left(f^e\left({\bf
r},{\bf k}+\frac{\bf q}{2}\right)+                     f^h\left({\bf r},-{\bf k}+\frac{\bf q}{2}\right)-1\right ) { \cal e}({\bf r}+{\bf x}).\end{aligned}\ ] ]      the integrals over @xmath33 and @xmath34 represent seemingly non - local effects introduced by the transformation into wigner functions .
this property of the wigner transformation retains the coherent effects in the carrier system . for the interaction of the carriers with the light field , it ensures momentum conservation by introducing a non - local phase correlation in the dipole field corresponding to the total momentum of the electron and hole concentrations involved .
effectively , the integral over @xmath34 converts the momentum part of the wigner distributions into a coherence length .
this coherence length then reappears in the spatial structure of the dipole field and the electromagnetic field generated by the carrier distribution .
however , the coherence length in the carrier system is usually much shorter than the optical wavelength .
it can therefore be approximated by a spatial delta function . here , we do this by noting that @xmath35 if the effects of the momentum shift @xmath34 in the wigner functions is neglected , the integrals may then be solved , yielding only local interactions between the carrier system and the light field :    @xmath36 \left.\frac{\partial}{\partial t}{\cal e } ( { \bf r})\right |_{cl } & = & -i g_0\frac{\sqrt{\nu_0}}{8\pi^3}\int d^3{\bf k}\ ; p({\bf r},{\bf k } ) \\ \label{eq : endbulk } \left.\frac{\partial}{\partial t } p({\bf r},{\bf k})\right |_{cl } & = & ig_0\sqrt{\nu_0}\ ; \left(f^e({\bf r},{\bf k})+f^h({\bf r},-{\bf k})-1\right){\cal e}({\bf r}).\end{aligned}\ ] ]    these equations now provide a compact description of the light - carrier interaction in a three dimensional semiconductor medium , including the incoherent quantum noise term which is the source of spontaneous emission .
similar equations may also be formulated for a quantum well structure by replacing the phase space density of @xmath29 with @xmath37 , reducing the spatial coordinates of the carrier system to two dimensions , and introducing a delta function for the coordinate perpendicular to the quantum well at the points where field coordinates correspond to dipole coordinates .
of course , the electromagnetic field remains three dimensional , even though the dipole it originates from is confined to two dimensions .
in particular , the correlation @xmath38 has both a three dimensional coordinate @xmath28 and a two dimensional coordinate @xmath39 .
it is therefore useful to distinguish the two dimensional and the three dimensional coordinates . in the following ,
the two dimensional carrier coordinates will be marked with the index @xmath40 .
note that in some cases , both @xmath28 and @xmath41 appear in the equations . in those cases ,
the in - plane coordinates @xmath42 and @xmath43 are equal , while the perpendicular coordinate @xmath44 must be equal to the quantum well coordinate @xmath45 .
the equations for the interaction of the three dimensional light field with the two dimensional electron - hole system in a single quantum well subband then read    @xmath46 \left.\frac{\partial}{\partial t}{\cal e } ( { \bf r})\right |_{cl } & = & -i g_0\frac{\sqrt{\nu_0}}{4\pi^2}\int d^2{\bf k}_\parallel\ ; p({\bf r}_\parallel,{\bf k}_\parallel)\delta(r_z - z_0 ) \\ \label{eq : endqw } \left.\frac{\partial}{\partial t } p({\bf r}_\parallel,{\bf k}_\parallel)\right |_{cl } & = &   ig_0\sqrt{\nu_0}\ ; \left(f^e({\bf r}_\parallel,{\bf k}_\parallel )       + f^h({\bf r}_\parallel,-{\bf k}_\parallel)-1\right ) { \cal e}({\bf r})_{r_z = z_0}.\end{aligned}\ ] ]    note that the value of @xmath1 will usually be slightly lower than the bulk value because the overlap of the spatial wavefunctions of the electrons and the holes in the lowest subbands is less than one .
the equations derived above represent the interaction of a single conduction band and a single valence band with a single scalar light field . neither the spin degeneracy of the carriers nor the polarization of the light field has been considered .
since the geometry of light field emission is highly dependent on polarization effects such effects should also be taken into account in the framework of this theory . the basic interaction between a single conduction band , a single valence band and a single light field polarization
are accurately represented by equations ( [ eq : bulk]-[eq : endbulk ] ) and ( [ eq : qw]-[eq : endqw ] ) . by adding the contributions of separate transitions , any many band system may be described based on these equations . in semiconductor quantum wells
the situation is considerably simplified if only the lowest subbands are considered .
then there are only two completely separate transitions involving circular light field polarizations coupled to a single one of the two electron and hole bands
. the quantum well structure does not interact with light fields which are linearly polarized in the direction perpendicular to the plane of the quantum well .
the equations for quantum wells are therefore completed by adding an index of @xmath47 or @xmath48 to each variable .
the situation in the bulk system is much more involved .
the transitions occur between the two fold degenerate spin 1/2 system of the electrons and the four fold degenerate spin 3/2 system of the holes .
all three polarization directions of the light field are equally possible , connecting each of the electron bands with three of the four hole bands . however , since the effective mass of the two heavy hole bands is much larger than the effective mass of the light holes ( e.g.  by a factor of eight in gaas ) , only a small fraction of the holes will be in the light - hole bands ( about 6% in gaas for equilibrium distributions ) .
consequently , the carrier subsystem can again be separated into two pairs of bands .
however , the light field polarization emitted by the electron - heavy hole transitions in bulk material is circularly polarized with respect to the relative momentum @xmath49 of the electron and the heavy hole . since usually there is no strong directional anisotropy in the @xmath23 space distribution of the carriers , it can be assumed that one third of the @xmath23 space volume contributes to each polarization direction and the equations may be formulated accordingly .    in the following
, we will assume that the wigner distributions of the two pairs of bands considered are approximately equal at all times .
note that this means that hole burning effects in the spin and polarization dynamics which may occur in vertical cavity surface emitting lasers @xcite are ignored .
however , such effects have been investigated in several other studies @xcite and are found to be fairly weak in some devices @xcite .
the complete set of dynamical equations can now be formulated by adding the carrier dynamics and the linear part of maxwell s equations to the light - carrier interaction .
modeling the carrier dynamics of a semiconductor system can be a formidable task all by itself .
a number of approximations and models have been developed to deal with the effects of many - particle interactions and correlations and with the dissipation caused by the electron - phonon interactions @xcite . in the following ,
we choose a simple diffusion model .
many particle effects such as the band gap renormalization or the coulomb enhancement are not mentioned explicitly , but can be added in a straightforward manner @xcite .
we assume that the electron and hole densities will be kept equal by the coulomb interaction , which will induce a current whenever charges are separated .
therefore , it is possible to define the ambipolar carrier density @xmath50 with @xmath51 note that the two fold degeneracy of the electron and heavy hole bands has been included by choosing a density of states of @xmath52 instead of @xmath53 .
this includes the assumption that the wigner distribution does not depend on the spin variable of the electrons and holes as mentioned above .
the light carrier interaction of this carrier density is @xmath54 where the index @xmath55 denotes the component of the light field or dipole density corresponding to the linear polarization direction of @xmath56 . in the case of @xmath57
the index @xmath55 refers to the field polarization and the second index @xmath58 denotes the vector component of the dipole vector .
equation ( [ eq : trans ] ) shows how the field - dipole correlation converts electron - hole pairs into photons .
the total carrier density dynamics can now be formulated as @xmath59 where @xmath60 is the ambipolar diffusion constant , @xmath61 is the injection current density , and @xmath62 is the rate of spontaneous recombinations by non - radiative processes and/or spontaneous emission into modes not considered in @xmath63 , e.g. if the paraxial approximation is applied .    the @xmath23 dependence of the distribution functions @xmath64 and @xmath65 may be approximated by assuming that the electrons and holes will always be in thermal equilibrium .
the distribution functions are then given by fermi functions @xmath66 + 1 \right)^{-1},\ ] ] where @xmath67 are the effective masses of electrons and heavy holes , respectively .
the chemical potential @xmath68 is a function of the carrier density @xmath50 . a useful estimate of this relationship is given by the pade approximation @xcite .
spectral holeburning may be taken into account by introducing a relaxation time @xmath69 and converting the dynamics of the distribution function due to the light - carrier interaction into a deviation from the equilibrium distribution by adiabatic elimination of the relaxation dynamics : @xmath70    finally , the carrier dynamics of the dipole @xmath71 and the dipole part of the field - dipole correlation @xmath72 needs to be formulated .
since both depend on a correlation of the electrons with the holes , they will necessarily relax rather quickly at a rate of @xmath73 which should be of the same order of magnitude as @xmath74 .
physically , @xmath73 may be interpreted as the total momentum dependent scattering rate in the carrier system .
the remainder of the dynamics can be derived from the single particle dynamics .
this unitary contribution to the evolution of the dipole may be expressed by a momentum dependent frequency @xmath75 . for parabolic bands and isotropic effective masses @xmath76
, this frequency is given by @xmath77 many - particle effects due to the coulomb interaction between the carriers may be included by introducing a carrier density dependence in @xmath78 and @xmath79 .
such renormalization terms representing the mean field effects of the carrier - carrier interaction have been derived and discussed e.g. in @xcite . in the following , this many particle renormalization
will not be mentioned explicitly , although it can be included in a straightforward manner .    with the rates @xmath73 and @xmath75 the dipole dynamics reads    @xmath80    note that the phase dynamics is formulated relative to the band gap frequency @xmath81 .
the real physical phase oscillations of @xmath71 would include an additional phase factor of @xmath82 $ ] .
however , the only physical effect of this oscillation is to establish resonance with the corresponding frequency range in the electromagnetic field , the dynamics of which we consider next .
the heisenberg equations of motion describing the operator dynamics of the electromagnetic field operators are identical to the classical maxwell s equations . in terms of the electromagnetic field @xmath83 and the dipole densities @xmath84 , the equation reads @xmath85 where @xmath86 and @xmath87 are the dielectric constant and the speed of light in vacuum , respectively , and @xmath88 is the dielectric constant in the background semiconductor medium .
maxwell s equation describes the light field dynamics for all frequencies .
since we are only interested in frequencies near the band gap frequency @xmath81 , it is useful to separate the phase factor of @xmath82 $ ] , defining @xmath89{\bf e_0}({\bf r})$ ] .
now @xmath90 can be considered to vary slowly in time relative to @xmath82 $ ] .
therefore , the time derivatives may be approximated by @xmath91 \frac{\partial^2}{\partial t^2}\exp[-i\omega_0 t]{\bf e}_0({\bf r } ) \approx -\omega_0 ^ 2 { \bf e}_0({\bf r } ) - 2i\omega_0 \frac{\partial}{\partial t } { \bf e}_0({\bf r}).\ ] ] similarly , @xmath92 may be defined such that @xmath93{\bf p}_0({\bf r})$ ] .
the approximation used here may even be of zero order , since we are primarily interested in the dynamics of the electromagnetic field : @xmath91 \frac{\partial^2}{\partial t^2}\exp[-i\omega_0 t]{\bf p}_0({\bf r } ) \approx -\omega_0 ^ 2 { \bf p}_0({\bf r}).\ ] ] the temporal evolution of the electromagnetic field now reads @xmath94 where @xmath95 is the vacuum wavevector length corresponding to @xmath81 . in ( [ eq : edynparax1 ] ) ,
the field dynamics is described in terms of electromagnetic units , that is the fields represent forces acting on charges . to switch scales to the photon densities represented by @xmath96
, energy densities have to be considered .
since the energy of each photon will be close to the bandgap energy @xmath97 , the energy density of the electromagnetic field is given by @xmath98 therefore , the field may be expressed as photon density amplitude using @xmath99 the dipole density @xmath92 may be expressed in terms of @xmath100 and @xmath101 by noting that the density @xmath100 is the dipole density in units of one - half the atomic dipole given by the interband dipole matrix element @xmath102 at @xmath103 .
the factor of one - half is a logical consequence of the property that @xmath104 .
thus , a fully polarized lattice would have a dipole density of @xmath105 which must correspond to @xmath106 .
note that @xmath102 contains an arbitrary phase factor depending only on the definition of the states used for its determination . for convenience ,
we assume a definition of phases such that @xmath102 is real .
the dipole density @xmath92 may then be written as @xmath107 written in terms of @xmath108 and @xmath101 , the complete field dynamics now reads @xmath109 the coupling frequency @xmath1 introduced in equation([eq : hamilton ] ) may be expressed in terms of the dipole matrix element @xmath110 : @xmath111 with this equation , the operator dynamics of the light field operator @xmath2 corresponds to the field dynamics of the maxwell - bloch equations for classical fields . by applying the linear propagation dynamics of the field to @xmath112 and @xmath57 as well , it is now possible to formulate a complete set of quantum maxwell - bloch equations .
on the basis of the discussion in the previous sections , the quantum maxwell - bloch equations for a bulk gain medium in three dimensions read    @xmath113 \frac{\partial}{\partial t }           p_i({\bf r},{\bf k } ) & = &        - \left(\gamma ( { \bf k } ) + i\omega({\bf k})\right )                p_i({\bf r},{\bf k } )   \nonumber \\        & & + i g_0\frac{2\sqrt{\nu_0}}{3}\ ;                \left ( f^e_{eq}\left(k;n({\bf r})\right )                     + f^h_{eq}\left(k;n({\bf r})\right ) -1 \right ) { \cal e}_i({\bf r } ) \\
\frac{\partial}{\partial t } { \cal e}_i({\bf r } ) & = &         i\frac{\omega_0}{2k_0 ^ 2}\left(\sum_k                \frac{\partial}{\partial r_k}\epsilon_r^{-1 }                \frac{\partial}{\partial r_k } { \cal e}_i({\bf r } )               -\frac{\partial}{\partial r_i}\epsilon_r^{-1 }                \frac{\partial}{\partial r_k}{\cal e}_k({\bf r } )                                      + k_0 ^ 2 { \cal e}_i({\bf r})\right ) \nonumber \\       & & - i g_0\frac{\sqrt{\nu_0}}{8\pi^3 }                               \int d^3{\bf k } \ ; p_i({\bf r},{\bf k}).\end{aligned}\ ] ]    in order to describe a realistic diode one needs to describe not only the volume of the active region but also the propagation of light out of this region .
this may either be achieved by defining realistic boundary conditions or by setting all material properties equal to zero outside a finite active volume and calculating the light field propagation into the outside medium by varying @xmath114 in space .
next , we will formulate the equations for a quantum well structure .
for this case , we will also describe different cavity structures and the appropriate paraxial approximations possible for the various types of laser devices . using the terminology of equations ( [ eq : qw]-[eq : endqw ] ) , the quantum maxwell - bloch equations for a multi quantum well structure with q quantum wells read    @xmath115 & &       + i g_0 q \sqrt{\nu_0}\;\delta({\bf r}_\parallel-{\bf r^\prime}_\parallel )        \delta(r_z - z_0 ) \delta_{ij_\parallel }        f^e_{eq}\left(k_\parallel;\frac{n({\bf r}_\parallel)}{q}\right ) \cdot
f^h_{eq}\left(k_\parallel;\frac{n({\bf r}_\parallel)}{q}\right ) \\
\frac{\partial}{\partial t }          i_{ij}({\bf r};{\bf r^\prime } ) & = & - i\frac{\omega_0}{2k_0 ^ 2 }     \sum_k\left(\frac{\partial}{\partial r_k}\epsilon_r^{-1 }                       \frac{\partial}{\partial r_k }                -\frac{\partial}{\partial r^\prime_k}\epsilon_r^{-1 }                       \frac{\partial}{\partial r^\prime_k}\right )   i_{ij}({\bf r};{\bf r^\prime } ) \nonumber \\ & & + i\frac{\omega_0}{2k_0 ^ 2}\sum_k\left (                 \frac{\partial}{\partial r_i}\epsilon_r^{-1 }                       \frac{\partial}{\partial r_k }                  i_{kj}({\bf r};{\bf r^\prime } )               - \frac{\partial}{\partial r^\prime_j}\epsilon_r^{-1 }                       \frac{\partial}{\partial r^\prime_k }                  i_{ik}({\bf r};{\bf r^\prime})\right ) \nonumber \\ & &       -i g_0\frac{\sqrt{\nu_0}}{4\pi^2 }           \int d^2{\bf k}_\parallel \left (   c_{ij_\parallel}({\bf r};{\bf r^\prime}_\parallel,{\bf k}_\parallel ) \delta(r_z^\prime - z_0 ) \right .
\nonumber \\ & & \left . \hspace{3 cm } -c_{ji_\parallel}^*({\bf r^\prime};{\bf r}_\parallel,{\bf k}_\parallel ) \delta(r_z - z_0 ) \right ) \\[1 cm ] \frac{\partial}{\partial t }          p_{i_\parallel}({\bf r}_\parallel,{\bf k}_\parallel ) & = & - \left(\gamma ( { \bf k}_\parallel ) + i\omega({\bf k}_\parallel)\right )           p_{i_\parallel}({\bf r}_\parallel,{\bf k}_\parallel )   \nonumber \\        & & + i g_0 q \sqrt{\nu_0}\ ;      \left ( f^e_{eq}\left(k_\parallel;\frac{n({\bf r}_\parallel)}{q}\right )           + f^h_{eq}\left(k_\parallel;\frac{n({\bf r}_\parallel)}{q}\right ) -1 \right )   { \cal e}_i({\bf r})_{r_z = z_0 } \\
\frac{\partial}{\partial t } { \cal e}_i({\bf r } ) & = &         i\frac{\omega_0}{2k_0 ^ 2}\left(\sum_k                \frac{\partial}{\partial r_k}\epsilon_r^{-1 }                \frac{\partial}{\partial r_k } { \cal e}_i({\bf r } )               -\frac{\partial}{\partial r_i}\epsilon_r^{-1 }                \frac{\partial}{\partial r_k}{\cal e}_k({\bf r } )                                      + k_0 ^ 2 { \cal e}_i({\bf r})\right ) \nonumber \\       & & - i g_0\frac{\sqrt{\nu_0}}{4\pi^2 }                               \int d^2{\bf k}_\parallel \ ;       p_{i_\parallel}({\bf r}_\parallel,{\bf k}_\parallel)\delta(r_z - z_0).\end{aligned}\ ] ]    note that @xmath116 is the total carrier density .
therefore , the density per quantum well which determines the chemical potential of the carrier distribution functions is @xmath117 .
again , the structure of an external cavity may be considered either by boundary conditions or by spatially varying @xmath114 . in particular laser diodes
may be described by distinguishing between reflective and non - reflective edges .
if the reflective surface is perpendicular to the plane of the quantum wells , the laser is an edge emitter .
if the reflectivity is very high on the surface planes parallel to the quantum wells , the laser is a vertical cavity surface emitting laser ( vcsel ) .      in an edge emitting laser , the laser light field propagates in the plane of the quantum well .
since the @xmath118-direction is already defined as the one perpendicular to the quantum well we will define the @xmath119-direction as the direction along which the laser light propagates .
a schematic representation of this type of laser geometry is shown in figure [ edge ] .
it is possible to drastically reduce the dimensionality of the equation describing the edge emitting laser geometry by noting that the light field polarization of the amplified fields will be in the plane of the quantum well and by limiting the analysis to a single longitudinal mode .
effectively , this corresponds to a light field @xmath108 with the following properties :    @xmath120    the envelope function @xmath121 describes both the propagation along the @xmath119-direction and the confinement along the @xmath118-direction .
it represents an approximate solution of the wave equation in the @xmath122-plane normalized by @xmath123    the equations are then limited to light field modes with the two dimensional envelope @xmath121 .
spontaneous emission into other light field modes must be considered by including the rate of emission in the carrier recombination rate @xmath62 . since
the length @xmath124 of the laser in the @xmath119-direction is also an important property of the device , it is included by considering the openness of the optical cavity . with the reflectivities of the laser mirrors given by @xmath125 and @xmath126 , the light field in the cavity
is damped by losses through the mirrors at a rate of @xmath127.\ ] ] the new one - dimensional variables are now defined as follows :    @xmath128    the carrier density is now given in terms of a one dimensional density . to obtain the two dimensional carrier density per quantum well ,
this density is to be divided by @xmath129 .
note that the intensity is also given in terms of photons per unit length .
the dynamics of the edge emitter then reads    @xmath130 \frac{\partial}{\partial t } p_0(r_x,{\bf k}_\parallel ) & = & - \left(\gamma ( { \bf k}_\parallel ) + i\omega({\bf k}_\parallel)\right )               p_0(r_x,{\bf k}_\parallel )   \nonumber \\        & & + i g_0 \sigma \sqrt{\nu_0}\ ;      \left (   f^e_{eq}\left(k_\parallel;\frac{n_{1d}(r_x)}{ql}\right )            + f^h_{eq}\left(k_\parallel;\frac{n_{1d}(r_x)}{ql}\right ) -1 \right )   { \cal e}_0(r_x ) \\
\label{eq:1ddynamics_b } \frac{\partial}{\partial t } { \cal e}_0(r_x ) & = & -\kappa { \cal e}_0(r_x )        + i\frac{\omega_0}{2k_0 ^ 2\epsilon_r }                \frac{\partial^2}{\partial r_x^2 }                { \cal e}_0(r_x )        -i g_0\frac{\sqrt{\nu_0}}{4\pi^2 }                               \int d^2{\bf k}_\parallel \ ;       p_0(r_x,{\bf k}_\parallel),\end{aligned}\ ] ]    where @xmath131 is the confinement factor which determines the overlap between the quantum wells and the light field mode , @xmath132      in a vcsel the light field is strongly confined by highly reflective mirrors above and below the quantum wells .
the light field propagates perpendicular to the quantum well structure as shown in figure [ vcsel ] .
therefore both the possible polarization directions and the spatial dynamics remain two dimensional .
only the @xmath118-direction may be eliminated by averaging over a single longitudinal mode .
coupling terms between the polarization directions should be taken into account , even if they are small . for vcsels ,
the assumptions read    @xmath133    the latter condition takes into account the divergence of @xmath134 caused by the polarization @xmath135 .
this is an important contribution to the quantum maxwell - bloch equations , since it coherently couples orthogonal polarizations .
the properties of the envelope function @xmath136 are defined as @xmath137    the cavity loss rate @xmath138 is defined as in equation ( [ eq : kappa ] ) .
however , the experimentally observed polarization stability is taken into account by using slightly different reflectivities for the x and y polarizations .
the cavity loss rate is therefore given by @xmath139 and @xmath140 .
experimental results @xcite suggest that @xmath141 .
a birefringence of @xmath142 is also included to denote the difference between the band gap frequency and the longitudinal frequencies of the confined light field for the two polarization directions .
the birefringence @xmath143 is usually in the ghz range .
since all coordinates are two dimensional , the index @xmath144 which marked the two dimensional coordinates in the quantum well equations will be omitted . instead
, the two dimensional variables are marked with a tilde .
all indices and coordinates of such variables are only defined in two dimensions .
the variables are defined as    @xmath145    note that the dipole variable @xmath146 is rescaled by the field density of the envelope function @xmath136 at @xmath147 .
the dipole given by @xmath148 is therefore the average dipole density within the whole cavity , not just within the quantum wells .
the quantum maxwell - bloch equations for the vcsel now read    [ eq : qmbevcsel ] @xmath149 & &       + i g_0 \sigma \sqrt{\nu_0}\;\delta({\bf r}-{\bf r^\prime})\delta_{ij }        f^e_{eq}\left(k;\frac{\tilde{n}({\bf r})}{q}\right ) \cdot
f^h_{eq}\left(k;\frac{\tilde{n}({\bf r})}{q}\right ) \\
\frac{\partial}{\partial t } \tilde{i}_{ij}({\bf r};{\bf r^\prime } ) & = & - ( \kappa_i + \kappa_j)\tilde{i}_{ij}({\bf r};{\bf r^\prime } - i\frac{\omega_0}{2k_0 ^ 2\epsilon_r }     \left(\delta_{\bf r}-\delta_{\bf r^\prime}\right )   \tilde{i}_{ij}({\bf r};{\bf r^\prime } ) \nonumber \\ & &       -i g_0\frac{\sqrt{\nu_0}}{4\pi^2 }           \int d^2{\bf k } \left (   \tilde{c}_{ij}({\bf r};{\bf r^\prime},{\bf k } ) -\tilde{c}_{ji}^*({\bf r^\prime};{\bf r},{\bf k})\right .
\nonumber \\ & & + \sum_k \frac{1}{k_0 ^ 2\epsilon_r}\left.\left (    \frac{\partial^2}{\partial r^\prime_j r^\prime_k }    \tilde{c}_{ik}({\bf r};{\bf r^\prime},{\bf k } ) - \frac{\partial^2}{\partial r_i r_k }   \tilde{c}_{jk}^*({\bf r^\prime};{\bf r},{\bf k } ) \right)\right ) \\[1 cm ] \frac{\partial}{\partial t } \tilde{p}_{i}({\bf r},{\bf k } ) & = & - \left(\gamma ( { \bf k } ) + i\omega({\bf k})\right )               \tilde{p}_{i}({\bf r},{\bf k } )   \nonumber \\        & & + i g_0 \sigma \sqrt{\nu_0}\ ;      \left (   f^e_{eq}\left(k;\frac{\tilde{n}({\bf r})}{q}\right )            + f^h_{eq}\left(k;\frac{\tilde{n}({\bf r})}{q}\right ) - 1 \right )   \tilde{\cal e}_i({\bf r } ) \\
\frac{\partial}{\partial t } \tilde{\cal e}_i({\bf r } ) & = &        -(\kappa_i+i\delta\omega_i ) \tilde{\cal e}_i({\bf r } )        + i\frac{\omega_0}{2k_0 ^ 2\epsilon_r}\delta \tilde{\cal e}_i({\bf r } ) \nonumber \\ & & -
i g_0\frac{\sqrt{\nu_0}}{4\pi^2 }     \int d^2{\bf k}\;\left(\tilde{p}_{i}({\bf r},{\bf k } )         + \sum_j \frac{1}{k_0 ^ 2\epsilon_r}\frac{\partial^2}{\partial r_i r_j }                            \tilde{p}_{j}({\bf r},{\bf k})\right),\end{aligned}\ ] ]    with @xmath131 being the confinement factor along the @xmath118-direction , @xmath150 equations ( [ eq : qmbevcsel ] ) present a starting point for the study of spatial polarization patterns and fluctuations in vcsels . for more realistic models , it may also be desirable to include a spatial dependence of the birefringence and the dichroism . also , nonlinear effects may be introduced , e.g.  by separating the carrier densities for right and left circular polarization @xcite .      using the equations presented above
, it is now possible to calculate the emergence of a spatially coherent light field in semiconductor laser diodes both above and below threshold .
note that the average light field @xmath151 will remain zero at all times due to the random phases of spontaneous emission processes .
the ( average ) spatial coherence of the light field , however , does not vanish and is fully described by the non - local field - field correlations @xmath152 which emerge due to the propagation and/or amplification of the originally incoherent local spontaneous emissions . this emergence of coherence as a concequence of incoherent emissions has been discussed in a temporal context using nonequilibrium green s functions in @xcite .    in order to understand the physical implications of the well known absence of an average light field in lasers , it should be recalled that all the results of the quantum maxwell - bloch equations represent averages which have to be interpreted in terms of statistical physics .
for example , the field - field correlation @xmath153 represents a variance of the probability distribution with respect to the possible spatial electromagnetic field values .
the coherent field observed in experimental time - resolved measurements will vary randomly from measurement to measurement according to this probability distribution .
indeed , the intensity distribution itself will vary depending on the random phase interference of the eigenmodes given by @xmath153 .
the calculated average spatial intensity distribution @xmath154 only describes the average near field pattern , which is likely to be close to but not identical with the one actually observed .
the fluctuations of the actual intensity distribution around this average , however , are disregarded as a consequence of the factorization performed in section [ sec : lci ] . moreover ,
the fluctuations in the carrier density distribution induced by spatial holeburning associated with these fluctuations of the intensity distribution have also been disregarded .    while the average spatial coherence of the light field is fully described by the quantum maxwell - bloch equations ,
the average expected temporal coherence has not yet been explicitly considered .
indeed , it is not necessary to consider temporal coherence in the closed sets of quantum maxwell - bloch equations given above because all the information required to obtain the correct emission and absorption rates are incorporated in the field - dipole correlation @xmath155 . as shown in section [ sec : ase ] , the spectra of gain and spontaneous emission are implicitly given by the coherent dipole dynamics which enters into the temporal evolution of this field - dipole correlation .
if explicit information about the two time correlations is desired , however , such correlations may be included in the dynamics by noting that the temporal evolution of the two time correlations of the field @xmath156 and the two time correlations of the field - dipole correlation @xmath157 is equivalent to the dynamics of the field and dipole expectation values@xcite .
while the quantum maxwell - bloch equations for the correlations at @xmath158 remain unchanged , the evolution of the two time correlations as a function of @xmath159 is then given by an additional pair of equations which depend on the carrier dynamics given by the solution of the original system of quantum maxwell - bloch equations as presented above . in the case of vcsels these additional equations supplementing equations ( [ eq : qmbevcsel ] ) read    [ eq : lin ] @xmath160    if the carrier density changes slowly , the equations describe the linear response of the medium caused by the initial intensity distribution @xmath161 and the initial field - dipole correlation @xmath162 determined from equations ( [ eq : qmbevcsel ] ) . in this case
it is possible to derive the spectrum and the gain from the eigenmodes and the associated eigenvalues of the quasi - stationary linear optical system .
note that the eigenmodes of the linearized dynamics are not necessarily identical with the eigenmodes of the intensity distribution @xmath161 , since fast variations in the carrier density distribution may have induced phase locking between the dynamical eigenmodes .    in general ,
the frequency spectra of the light field are given by fourier transforms of the two - time correlations obtained from equations ( [ eq : lin ] ) .
however , as noted above , such spectra do not comprise any effects which arise from carrier density fluctuations .
these effects are known to be quite significant .
well known examples of carrier fluctuation effects in the frequency spectrum of semiconductor lasers are the linewidth enhancement phenomenologically described by the linewidth enhancement factor @xmath163 and the relaxation oscillation sidebands observed in stable single mode operation . moreover
, spatial carrier density fluctuations may also significantly modify the multi mode spectra of semiconductor laser devices , as pointed out recently for the case of semiconductor laser arrays @xcite .
for a given carrier distribution @xmath164 , the dynamics of the optical field @xmath108 and the dipole density @xmath165 are linear . in this case
, it is possible to integrate the equations of motion to obtain a green s function for the field dynamics .
the equation for bulk material reads    @xmath166    correspondingly , the equation for a multi quantum well structure of @xmath167 quantum wells has the form @xmath168    an expression for the rate @xmath169 at which a light field mode of frequency @xmath170 is amplified can be derived by solving the integral over @xmath171 using @xmath172 .
the real part of the result is the gain spectrum given in terms of amplification per unit time , @xmath169 . for bulk material ,
this amplification rate is given by    @xmath173    and for quantum wells , the corresponding amplification rate reads @xmath174    the gain per unit length can be obtained by dividing the rate @xmath169 by the speed of light in the semiconductor medium , @xmath175 . however , in order to establish the connection between the gain spectrum and the spectral density of spontaneous emission , it is more convenient to use the amplification rate as a starting point .    the quantum maxwell - bloch equations for the field - dipole correlation @xmath176 show that the ratio between the spontaneous contributions and the stimulated contributions is @xmath177 in this equation , @xmath178 corresponds to a photon density of one photon per mode .
the spectral density of the spontaneous emission may therefore be obtained by replacing @xmath179 with @xmath180 in equations ( [ eq : bulkgain ] ) and ( [ eq : qwgain ] ) , respectively , and multiplying the resulting rates with twice the density of light field modes which couple to the medium ( the factor of two being a result of considering intensities instead of fields ) . at the band edge frequency @xmath81 ,
the density of light field modes per volume and frequency interval in a continuous medium is @xmath181 the density of the spontaneous emission rate for bulk material @xmath182 thus reads    @xmath183    for quantum wells , the density of modes is only @xmath184 of @xmath185 , since the dipole component perpendicular to the quantum well is zero .
also , the delta function @xmath186 may be omitted to obtain the emission density per area .
the spontaneous emission density @xmath187 is then given by @xmath188    the total rate of spontaneous emission per unit volume or area may be obtained by integrating over all frequencies .
this integral removes the dependence on @xmath73 . for bulk material ,
@xmath189    and for quantum wells , @xmath190    for zero temperature , the spontaneous emission rate may be derived by noting that @xmath191 .
the integral over @xmath23 may thus be solved , resulting in    @xmath192    for bulk material and @xmath193    for quantum wells . for both bulk and quantum wells the density of spontaneous emission now may be expressed as @xmath194 where @xmath195 is the rate of spontaneous emission given by @xmath196 using equation ( [ eq : gd ] ) , the rate of spontaneous emission may also be expressed in terms of the dipole matrix element @xmath197 , @xmath198 where @xmath199 is the classical power radiated by an oscillating dipole of the amplitude @xmath197 .
note that the factor of @xmath200 is consistent with a quantum noise interpretation of spontaneous emission such as the one represented by the semiclassical langevin equations .
according to this interpretation , the fluctuations of each dipole are given by @xmath201 because both the real and the imaginary part of the dipole contribute .
the spontaneous emission of an excited atom is then composed of one half amplified field noise and one half dipole fluctuations
. therefore , each one of the two dipole components contributes one quarter of the total spontaneous emission of an excited state .
numerical values of @xmath202 and @xmath1 for gaas may be determined by assuming a spontaneous lifetime of @xmath203  ns , a band gap of @xmath204 ev and @xmath205 .
the dipole matrix element is then @xmath206 which corresponds to a distance of @xmath207 m times the electron charge and the coupling frequency is @xmath208 .    for quantum wells at zero temperature ,
the integrals over @xmath209 can be solved analytically using equation ( [ eq : bandshape ] ) and assuming that @xmath210 is independent of @xmath209 .
the resulting gain spectrum is then given by @xmath211 where @xmath212 is the transition frequency at the fermi surface of the electrons and holes .
it is related to the carrier density @xmath213 by @xmath214 the spectral density of spontaneous emission is thus given by @xmath215    typical spectra of gain and spontaneous emission of an active layer containing @xmath216 quantum wells obtained from the analytic approximations ( [ eq : wqw ] ) and ( [ eq : sqw ] ) , respectively , are presented in fig .
[ spectra ] for characteristic values of the carrier density . for the spectra in fig .
[ spectra ] we have assumed a total spontaneous emission lifetime of @xmath203 ns and a band gap of @xmath217 ev .
other parameters are the effective mass of electrons ( @xmath218 ) and holes ( @xmath219 ) , given in units of the electron mass @xmath220 as well as the dipole damping rate @xmath221 mev , and dielectric constant @xmath205 .
gain and spontaneous emission are both displayed relative to the peak values @xmath222 and @xmath223 .
the gain value may be interpreted by calculating the gain of a light beam of width @xmath224  cm with an incidence perpendicular with respect to the quantum well and traveling at a speed of @xmath225 in the plane of the quantum well .
the maximal gain is then given by @xmath226 .
the five spectra displayed in fig .  [ spectra ] are the gain at @xmath227 ( @xmath1 ) , the gain at @xmath228 ( @xmath229 ) , the spontaneous emission at @xmath228 ( @xmath230 ) , the gain at @xmath231 ( @xmath232 ) and the spontaneous emission at @xmath233 ( @xmath234 ) .
[ spectra ] clearly shows the influence of the carrier density @xmath213 . in the absence of charge carriers ( @xmath1 ) , the laser is purely absorptive . with increasing carrier density @xmath213 , transparency is reached at @xmath228 ( @xmath229 ) .
this density is characterized by vanishing gain ( i.e.  there is neither gain nor absorption ) at a frequency of @xmath235 .
at the same time , however , there is a significant contribution of spontaneous emission ( @xmath230 ) with a maximum at a frequency of @xmath236  mev . finally , at high values of the carrier density ( @xmath233 ) , both gain ( @xmath232 ) and spontaneous emission ( @xmath234 )
have a maximum above the band - gap frequency .      in the optical cavity of a laser
the equations for gain and spontaneous emission are modified by the mode structure .
in particular , the total linear response of an electromagnetic field mode inside the cavity includes the cavity loss rate @xmath138 . for the edge emitting semiconductor laser ,
the gain function of the cavity modes is given by @xmath237 where the confinement factor @xmath131 is defined according to equation ( [ eq:1dsigma ] ) .
spontaneous emission into the cavity modes passes through the gain medium and is thereby absorbed or amplified accordingly .
thus for an edge emitting laser , the rate of spontaneous emission into a cavity mode of frequency @xmath170 is given by @xmath238 this rate represents the total rate of spontaneous emission events per mode , regardless of the actual width of the laser . on the other hand , equation ( [ eq : stot ] ) gives the total rate of spontaneous emission per quantum well area .      in a laser of length @xmath124 and total width @xmath239 ( c.f .
[ edge ] ) , the spontaneous emission rate into free space is @xmath240 .
the spontaneous emission factor @xmath0 , which is generally defined as the fraction of spontaneous emission being emitted into the cavity mode @xcite , is on the basis of our theory given by the expression @xmath241 note that the two dimensional carrier density @xmath213 in the quantum well is related to the one dimensional carrier density @xmath242 by @xmath243 .
the spontaneous emission factor @xmath0 is a function of both frequency and carrier density .
consequently , the common assumption of the spontaneous emission factor @xmath0 being independent of the carrier density @xcite may be regarded as an approximation similar to the assumption of linear gain .
an analytical expression for the spontaneous emission factor may be obtained for zero temperature .
the k - space integrals may then be solved analytically using equation ( [ eq : bandshape ] ) and assuming that @xmath210 is independent of @xmath209 . for the spontaneous emission factor @xmath0
, the analytical result reads @xmath244 the fermi frequency @xmath212 is defined by equation([eq : fermif ] ) and expresses , in particular , the carrier density dependence of @xmath0 .
for @xmath245 we recover the result typically given in the literature ( e.g. @xcite ) which does not depend on @xmath213 .
[ beta ] shows the deviation of the spontaneous emission factor from this value as the fermi frequency @xmath212 passes the point of resonance with the cavity mode .
[ beta ] illustrates , in particular , the carrier density dependence of @xmath0 for three modes with frequencies above the band gap frequency given by ( a )  @xmath246 , ( b )  @xmath247 , and ( c ) @xmath248 .
most notably , @xmath0 is always smaller than the usual estimate given by @xmath249 , which is based on the assumption of ideal resonance between the transition frequency and the cavity mode .      with equations ( [ eq:1dgain ] ) and ( [ eq:1dspont ] ) , it is possible to find the steady state intensity @xmath250 of a mode with frequency @xmath170 , @xmath251 note that this result may also be obtained directly from equations ( [ eq:1ddynamics_a]-[eq:1ddynamics_b ] ) . in a wide cavity ,
the cavity modes are approximately plane wave modes and the relation between @xmath252 and @xmath253 in that case reads @xmath254 the steady state intensity distribution is characterized by the spatial coherence derived from the intensity distribution of the plane wave modes of the cavity .
generally , the intensity distribution of plane waves corresponds in the far field to an optical field at angles relative to the axis of emission in the plane of the quantum well .
the angular distribution of intensity and coherence in the far field is thus given by @xmath255 therefore , the far field intensity distribution may be determined directly from the frequency dependence of the intensities by @xmath256 the intensity is given in units of @xmath257 per unit angle .    for @xmath258
we may in analogy to ( [ eq : beta ] ) solve the integral in ( [ eq:1dspont ] ) by assuming @xmath210 to be independent of @xmath23 . as an analytical expression
we then obtain for the far - field intensity distribution of a broad area semiconductor laser @xmath259 the parameter @xmath260 represents the ratio between the cavity loss rate @xmath138 and the maximum amplification rate of the gain medium .
laser activity is only possible if @xmath261 .
the classical laser threshold is defined by the carrier density for which the denominator of @xmath262 is zero for a single specific frequency @xmath263 .
consequently , the carrier density at which this occurs is pinned .
figure [ farfield ] shows the far field intensity distribution for different carrier densities below this pinning density . in fig .
[ farfield ]  ( a ) , the wide intensity distribution of amplified spontaneous emission for carrier densities is much lower than the pinning density .
the intensity maximum is clearly located at @xmath264 .
figure [ farfield](a ) shows the intensity distribution for carrier densities halfway towards threshold .
already , the intensity maxima move to angles of @xmath265 , corresponding to the frequency at which the gain spectrum has its maximum . in the case of fig .
[ farfield](c ) , the threshold region is very close to the pinning density .
the peaks in the far field pattern narrow as the laser intensity is increased .
consequently the far field pattern indeed is a measure of the spatial coherence
similar as the linewidth of the laser spectrum is a measure of temporal coherence .
it is therefore desirable to consider quantum noise effects in the spatial patterns of optical systems . in the context of squeezing
, such patterns have been investigated by gatti and coworkers @xcite based on the general formulation of lugiato and castelli @xcite .
the laser patterns presented here are based on the same principles .
usually , however , the strong dissipation prevents squeezing in laser systems unless the pump - noise fluctuations are suppressed @xcite .
the quantum maxwell - bloch equations ( qmbe ) for spatially inhomogeneous semiconductor lasers derived in this paper take into account the quantum mechanical nature of the light field as well as that of the carrier system .
the only approximation used in the derivation of the intensity and correlation dynamics is that of statistical independence between the two carrier systems and the light field . in the qmbe presented here ,
the effects of coherent spatiotemporal quantum fluctuations which are generally not considered in the semiclassical maxwell - bloch equations for semiconductor laser devices have thus been taken into account .
the spontaneous emission term appears side by side with the gain and absorption term in the dynamics of the field - dipole correlation . in this way
the spatial coherence of spontaneous emission and amplified spontaneous emission is consistently described by the quantum maxwell - bloch equations .
typical features of the model have been illustrated by the spectra of gain and spontaneous emission .
an example of the spatial coherence characteristics described by the quantum maxwell - bloch equations has been presented by analytically obtaining the spontaneous emission factor @xmath0 and the far field distribution for the example of a broad area edge emitting laser . in general the quantum maxwell - bloch equations derived for edge emitting and vertical cavity surface emitting lasers
provide a starting point for a detailed analysis of spatial coherence patterns in diverse semiconductor laser geometries such as broad area or ultra - low threshold lasers .
as explained at the end of section [ sec : qmbe ] , the field average of zero is an expression of our lack of knowledge about the actual physical field present in the laser device .
this lack of knowledge could be removed by performing a measurement on the light field .
for example , the phase information could be obtained by measuring the interference of the light field from the diode with light from a separate laser .
a simple theoretical simulation of such a measurement is obtained by assuming that @xmath153 defines the variance of a gaussian distribution of coherent states ( gaussian p representation ) .
the measurement of the actual field @xmath266 may then be simulated by randomly selecting a coherent field from this gaussian distribution .
since the field and the dipole density are correlated , the statistical selection of @xmath266 shifts the dipole density average @xmath101 from zero to @xmath267 because the field has been determined with a precision equal to the quantum limit , the correlations factorize and the new values of @xmath153 and @xmath268 are given by the respective products of @xmath266 and @xmath101 .
the drastic changes in the intensity distribution and in the dipole dynamics which may result from such a simulated measurement cause spatial holeburning and give rise to relaxation oscillations . by performing several stochastical simulations starting from the same initial probability distribution , the statistics of the carrier density fluctuations may be obtained .
it is then possible to derive the correct linewidth enhancement factor @xmath163 as well as the relaxation oscillation sidebands directly from the dynamics of the quantum maxwell - bloch equations .
an alternative approach to the problem of quantum noise is given by the langevin equations @xcite .
langevin equations simulate quantum noise by adding classical noise sources which reproduce the statistical properties given by the uncertainty relations .
in particular , the exponential damping terms given by the cavity loss rate @xmath138 and the dipole relaxation rate @xmath210 must be compensated by a noise input maintaining the quantum fluctuations in the field and dipole densities . for quantum well lasers ,
these fluctuations are given by      note that the variables @xmath270 and @xmath271 are classical quantities in this context .
the langevin equations presented in the following do not describe quantum mechanical coherent states . instead , semiclassical light fields and dipole densities are calculated with a precision violating the uncertainty relations . while the statistics thus derived correspond to the quantum statistics , the theory applied is fully classical .
@xmath272 \frac{\partial}{\partial t } \tilde{p}_{i}({\bf r},{\bf k } )   & = & - \left(\gamma ( { \bf k } ) + i\omega({\bf k})\right )                \tilde{p}_{i}({\bf r},{\bf k } )   \nonumber \\        & & + i g_0 \sigma \sqrt{\nu_0}\ ;      \left (   f^e_{eq}\left(k;\frac{\tilde{n}({\bf r})}{q}\right )            + f^h_{eq}\left(k;\frac{\tilde{n}({\bf r})}{q}\right ) - 1   \right )    \tilde{\cal e}_i({\bf r } )   + q^p_i ( { \bf r},{\bf k},t ) \\
\frac{\partial}{\partial t } \tilde{\cal e}_i({\bf r } ) & = &         -(\kappa_i+i\delta\omega_i ) \tilde{\cal e}_i({\bf r } )         + i\frac{\omega_0}{2k_0 ^ 2\epsilon_r}\delta \tilde{\cal e}_i({\bf r } ) \nonumber \\ & &   - i g_0\frac{\sqrt{\nu_0}}{4\pi^2 }       \int d^2{\bf k}\;\left(\tilde{p}_{i}({\bf r},{\bf k } )         + \sum_j \frac{1}{k_0 ^ 2\epsilon_r}\frac{\partial^2}{\partial r_i r_j }                    \tilde{p}_{j}({\bf r},{\bf k})\right )         + q^{\cal e}_i({\bf r},t)\end{aligned}\ ] ]        these langevin equations allow a stochastical simulation of quantum noise in a semiclassical context .
however , it is necessary to perform a large number of runs before statistical results can be obtained . in particular
, the unrealistic intensity fluctuations of the light field vacuum need to average out before the results are consistent with quantum theory .
6 o. hess and t. kuhn , prog .
electr . * 20 * , 85 ( 1996 ) .
ebeling , _ integrated optoelectronics _
( springer , berlin 1993 ) .
t. lee , c.a .
burrus , j.a .
copeland , a.g .
dentai and d. marcuse , ieee j. quantum electron .
qe-*18 * , 1101 ( 1982 ) .
k. petermann , ieee j. quantum electron .
qe-*15 * , 566 ( 1979 ) .
a. yariv and s. margalit , ieee j. quantum electron .
qe-*18 * , 1831 ( 1982 ) .
a.e . siegmann in _ coherence and quantum optics vii _ edited by eberly , mandel and wolf ( plenum , new york 1996 ) .
g. bjrk , a. karlsson , and y. yamamoto , phys .
a * 50 * , 1675 ( 1994 ) .
y. yamamoto and r.e .
slusher , physics today , june 1993 , 66 ( 1993 ) .
f.jahnke , k.henneberger , w.schfer and s.w .
koch , j.opt.soc.am .
b * 10 * , 2394 ( 1993 ) .
f.jahnke and s.w .
koch , phys .
a * 52 * , 1712 ( 1995 ) .
k. henneberger and s.w .
koch , phys .
lett . * 76 * , 1820 ( 1996 ) .
o. hess and t. kuhn , phys .
a * 54 * , 3347 ( 1996 ) .
yu and m. cardona , _ fundamentals of semiconductors _ , ( springer , berlin 1996 ) .
e. wigner , phys . rev . * 40 * , 749 ( 1932 ) .
m. san miguel , q. feng and j.v .
moloney , phys .
a * 52 * , 1728 ( 1995 ) . j.
martin - regalado , m. san miguel , n.b .
abraham and f. prati , opt .
lett * 21 * , 351 ( 1995 ) .
hofmann and o. hess , phys .
a * 56 * , 868 ( 1997 ) .
h. van der lem and d. lenstra , opt . lett . * 22 * , 1698 ( 1997 ) .
hofmann and o. hess , quantum semiclass . opt . * 10 * , 87 ( 1998 ) .
van doorn , m.p .
van exter , a.m. van der lee and j.p .
woerdman , phys .
a * 55 * , 1473 ( 1997 ) .
w.w . chow , s.w .
koch , and m. sargent , _ semiconductor - laser physics _
, ( springer , berlin 1994 ) .
t. kuhn and f. rossi , phys .
lett . * 69 * , 977 ( 1992 ) , _ ibid .
b * 46 * , 7496 ( 1992 ) . c. ell , r. blank , s. benner and h.haug , j.opt.soc.am .
b * 6 * , 2006 ( 1989 ) .
hofmann and o. hess , opt
. lett . * 23 * , 391 ( 1998 ) .
d.f . walls and g.j .
milburn , _ quantum optics _ ( springer , berlin 1994 ) .
a. gatti , h. wiedemann , l.a .
lugiato , i.marzoli , g. oppo , and s.m.barnett , phys.rev .
a * 56 * , 877 ( 1997 ) .
lugiato and f. castelli , phys .
lett .  * 68 * , 3284 ( 1992 ) .