devices in which organic molecules form the active element are taking an increasingly important place in solid state physics .
these are the building blocks of the field of molecular electronics , whose potential applications underpin a vast number of technological areas .
novel components for high - performance computers @xcite , highly sensitive chemical sensors @xcite , and disposable and wearable devices are among the many proposed applications .
in addition the same set - up can be used for medical purposes , for instance in the detection of viruses @xcite or in the construction of a rapid and reliable protocol for dna sequencing @xcite .
most of the progress originates from the recently achieved ability to construct single molecule junctions and to measure their transport properties .
the experimental strategies for fabricating such devices include mechanically controllable break junctions @xcite , scanning tunneling spectroscopy @xcite , lithographically fabricated nanoelectrodes @xcite and colloid solutions @xcite .
unfortunately most of these techniques are actually `` blind '' in the sense that the geometrical configuration of the device at the atomic scale is not known .
for this reason it should not be surprising that different experiments for the same molecule yield conductances differing by of up to three orders of magnitude @xcite . in view of all these uncertainties
_ ab initio _ quantum transport schemes for calculating the electrical response of a molecular device become crucial .
the most common computational scheme for evaluating the electronic transport of a molecular device combines scattering theory in the form of the non - equilibrium green s function ( negf ) formalism @xcite , with an electronic structure method , the most widely used being density - functional theory ( dft ) @xcite .
alternatives are time - dependent dft @xcite or many - body methods @xcite , which at present however are more computationally involved and are at an earlier stage of development as routinely used schemes .
unfortunately for several molecules negf combined with dft appears to disagree with the experimental results . in particular
it seems to systematically overestimate the current flowing across a device , even if one bears in mind the uncertainty over the detailed geometry of the junction . in the prototypical case of benzenedithiol ( bdt ) sandwiched between two gold electrodes ,
the conductance for the most probable contact geometry calculated with negf and dft is higher than that of _ any _ of the experiments by at least one order of magnitude @xcite .    in this work
we demonstrate that most of the errors originate from using local or semi - local exchange and correlation potentials in dft .
this shortfall however can be corrected by applying an atomic self - interaction correction ( asic)@xcite scheme to the local functionals , leading to a dramatic improvement of the agreement between the calculated results and those obtained from experiments .
the reason for this improvement is rooted in the ability of asic to predict the correct ionization potential of molecules , and hence to correctly describe the band alignment between the molecular orbitals and the fermi level , @xmath2 , of the metallic electrodes . here
we extend the results previously published for bdt attached to the gold hollow site of the ( 111 ) surface @xcite to new molecules such as benzenedimethanethiol ( bdmt ) and biphenyldithiol ( bpd ) .
we also carry out a thorough investigation of the effects of changing the anchoring geometry between the molecule and the electrodes , demonstrating that , for the case of bdt attached to gold , the asic calculated @xmath0-@xmath1 curves are rather stable with respect to geometry changes .
this explains the relatively narrow distribution of conductance histograms found in experiments @xcite .
the problem we wish to solve is that of calculating the two - probe @xmath0-@xmath1 curve of a molecule sandwiched in between two metallic electrodes .
the negf scheme partitions such system into three regions , respectively the two current / voltage electrodes ( leads ) and a middle region called the scattering region ( sr ) ( see figure [ fig1 ] ) .
the sr includes the molecule and a portion of the leads , which is extended enough for the charge density calculated at the most external atomic layer to resemble that of the bulk electrodes .
the leads , assumed to be a periodic crystal in the direction of the transport , are kept at different chemical potentials @xmath3 where @xmath1 is the applied potential bias and @xmath4 is the electron charge .
the sr is described by a hamiltonian @xmath5 , which is used to construct the non - equilibrium green s function , @xmath6    @xmath7^{-1}\ : , \label{negfmx}\ ] ]    where @xmath8 are the self - energies for the leads .
@xmath6 enters in a self - consistent procedure to calculate the density matrix , @xmath9 , of the sr , and hence the two probe - current of the device @xcite .
the non - equilibrium @xmath9 is calculated following the negf prescription as @xmath10 g^{\dag}(e ) de \ : , \label{chdens}\ ] ] where @xmath11 $ ] . in practice , this integral is performed by splitting it into two parts@xcite : an equilibrium part which can be integrated along a contour in the complex plane , and a non - equilibrium part which has to be integrated along the real energy axis but which only contributes around @xmath2 .
the non - equilibrium charge density @xmath9 is then used to calculate a new hamiltonian for the scattering region @xmath12 $ ] ( where it is assumed that the hamiltonian has some functional dependence on @xmath9 ) .
this procedure is repeated self - consistently until the density matrix converges .
finally , the converged green s function can be used to calculate the current @xmath0 through the device : @xmath13 ( f(e , \mu_\mathrm{1 } ) -   f(e , \mu_\mathrm{2 } ) ) de \ : .
\label{curint}\ ] ] this is effectively the integral between @xmath14 and @xmath15 ( the bias window ) of the transmission coefficients @xmath16 $ ] . in brief
the negf scheme calculates the non - equilibrium scattering potential of the device .
thus the transmission coefficient @xmath17 is simply a superposition of resonances located at the molecular single - particle energy levels , including a possible shift and broadening due to the interaction with the leads .
it follows that the molecular levels close to the electrode fermi level , i.e. the highest highest occupied molecular orbital ( homo ) and the lowest unoccupied molecular orbital ( lumo ) , provide the dominant contribution to the current .
it is therefore crucial to employ an electronic structure theory capable of describing the position of these two levels accurately .
the negf scheme is general and not related to a particular electronic structure theory . however , since the transmission occurs through single - particle states , the associated electronic structure theory should meet several requirements @xcite .
first of all , the single - particle levels must closely resemble the physical removal energies of the system , i.e. the energy levels of the molecule should line up correctly with the @xmath2 of the metals forming the electrodes .
secondly , the theory should work at both integer and fractional occupation , ensuring the correct response of the molecular orbitals to changes in occupation due to the applied potential bias . finally , the matrix elements describing the interaction between the leads and the molecule should be calculated accurately avoiding the use of phenomenological parameters or fitting procedures .
the kohn - sham ( ks ) form @xcite of dft is certainly the most widely used _
ab initio _ electronic structure theory associated with the negf method . in the ks scheme
the dft problem of finding the ground state charge density is mapped onto that of solving a system of non - interacting single - particle schr " odinger equations @xmath18 \psi^{\sigma}_n({\bf r } ) = \epsilon^{\sigma}_n \psi^{\sigma}_n({\bf r } ) \ : , \label{kseqn}\ ] ] where @xmath19 is the hartree ( classical coulomb ) potential and @xmath20 is the exchange - correlation ( xc ) potential .
the exact form of @xmath20 is unknown , so it is typically approximated by local functionals such as the local density approximation @xcite ( lda ) or the generalized gradient approximation @xcite ( gga ) .
therefore the ks scheme is only a convenient prescription for minimizing the energy functional , and as such the individual ks eigenvalues do not necessarily correspond to physical energy levels of the system .
the dft observables such as the total energy and the charge density are in fact only integral quantities respectively of the ks eigenvalues and eigenvectors . however , in solid state theory it is common to associate the ks energies with the system band structure .
this , although it is not justified at the fundamental level , is supported by the practical evidence that ks bands represent a good first approximation of the true energies of a system , particularly for metals .
however , there is a remarkable exception to the non - physical nature of the ks eigenvalues .
in fact , the ks energy of the homo level ( @xmath21 ) can be rigorously associated with the negative of the ionization potential @xmath0 @xcite .
similarly the homo ks energy for the negatively charged system can be associated with the chemical affinity @xmath22 .
this suggests that , at least for moderate bias where the transport is through the homo , ks theory can be used effectively for transport calculations @xcite .
unfortunately , standard local and semi - local functionals completely misplace @xmath21 , which is often nowhere near @xmath23 .
this is particularly problematic for organic molecules , for which the lda @xmath21 is typically off from the experimental value of @xmath0 by approximately 4  ev @xcite .
most of the failures of lda and gga can be traced back to the self - interaction ( si ) problem , i.e. the spurious interaction of an electron with the hartree and exchange - correlation ( xc ) potentials generated by itself @xcite . in the case of hartree - fock theory the self - hartree energy
@xmath24 $ ] cancels exactly the self - xc energy @xmath25 $ ] @xmath26 + u[\rho^{\sigma}_n ] = 0 \ : , \label{exxhar}\ ] ] where we introduce the orbital density @xmath27 .
however , this cancellation is incomplete for both lda and gga .
the resulting ks potential therefore appears too repulsive and the eigenstates of a molecule are pushed to higher energies .
when this is transferred to the transport problem , the position of the peaks in the transmission coefficient results are in the wrong place .
in particular it is likely that peaks will erroneously move close to the fermi level of the electrodes , generating a large conductivity at zero bias . since the position of the peaks
is ultimately determined by the interplay between the hopping probabilities from the electrodes to the molecule with the charging energy of the molecule itself , this failure is somewhat reminiscent of the inability of local and semi - local functionals to describe mott - hubbard insulators .
perdew and zunger suggested @xcite that the self - interaction correction ( sic ) @xmath28 for an occupied ks orbital @xmath29 can be calculated from the sum of the self - hartree and self - xc energies @xmath30 + u[\rho^{\sigma}_n ] \ : .
\label{siclda}\ ] ] note that , although here we consider the case of sic - lda only , the same procedure can be readily applied to any approximated functionals .
the sic - lda xc energy @xmath31 is thus obtained by subtraction @xmath32 = e^\mathrm{lda}_\mathrm{xc}[\rho^{\uparrow } , \rho^{\downarrow } ] -   \sum^\mathrm{occ.}_{n \sigma } \delta^\mathrm{sic}_n   \ : , \label{sicen}\ ] ] and the sic - lda xc potential @xmath33 , to be subtracted from @xmath34 , is simply given by @xmath35 ; { \bf r})+v_\mathrm{xc}^{\mathrm{lda},\sigma}([\rho_n^\uparrow,0 ] ; { \bf r } ) \ ; , \label{sicpot}\end{aligned}\ ] ] with @xmath36 ; { \bf r})=\int\mathrm{d}^3{\bf r}^\prime\frac{\rho({\bf r}^\prime)}{|{\bf r}-{\bf r}^\prime|}\ ; , \\
v_\mathrm{xc}^{\mathrm{lda},\sigma}([\rho^\uparrow,\rho^\downarrow ] ; { \bf r})=\frac{\delta}{\delta \rho^\sigma({\bf r } ) } e_\mathrm{xc}^\mathrm{lda}[\rho^\uparrow,\rho^\downarrow]\;.\end{aligned}\ ] ] the problem of finding the energy minimum is complicated by the fact that @xmath31 is not invariant under unitary rotations of the occupied ks orbitals , which instead leave @xmath9 invariant .
this creates problem to the standard ks scheme since the theory becomes size - inconsistent .
in order to avoid such a complication modern sic theory introduces a second set of orbitals @xmath37 related to the canonical ks orbitals @xmath29 by a unitary transformation @xmath38 @xmath39 the functional can then be minimized by varying both the ks orbitals and the unitary transformation @xmath38 , leading to the system of ks - like equations : @xmath40 \psi^{\sigma}_n({\bf r } ) = \epsilon^{\sigma , \mathrm{sic}}_n \psi^{\sigma}_n({\bf r } ) \ : , \label{siceqn}\ ] ] where @xmath41 is the lda hamiltonian , and the sic potential , @xmath42 , is given by : @xmath43 where @xmath44 is the projector @xmath45 .
the numerical implementation of the full perdew - zunger sic scheme in typical solid state codes is cumbersome since the theory is orbital dependent and the energy minimization can not follow the standard ks scheme @xcite . when this is applied to transport
there is the additional complication that the ks orbitals are never individually available and moreover that one has to deal with an intrinsically non - local potential .
a drastic simplification of the problem can be obtained by using a recently implemented atomic approximation to the sic scheme , which we call the asic @xcite .
this is based on the pseudo - sic approximation , originally proposed by vogel and coworkers @xcite , and later extended to non - integer occupation by filippetti and spaldin @xcite .
the main idea is that of replacing the @xmath46 orbitals with atomic like functions , which are not calculated self - consistently .
thus the si correction becomes atomic - like and no information is needed other than the charge density and the asic projectors @xcite .
asic has been demonstrated to produce single - particle energy levels which match the experimental molecular removal energies quite well @xcite .
in particular , for several different molecules investigated , @xmath47 , and the @xmath21 for negatively charged molecules is close to the molecular affinity @xcite . as an example , asic places @xmath21 for 1,2-bdt at -8.47  ev to compare with the lda value of -4.89  ev and the experimental ionization potential @xmath488.5  ev @xcite .
asic is the scheme that we adopt in this work .
local and semi - local functionals are affected by another fundamental problem , i.e. the lack of the derivative discontinuity ( dd ) in the dft energy .
this is the discontinuity at integer occupation in the derivative of the total energy of a system @xmath49 with respect to its occupation @xmath50 @xcite . from janak
s theorem it follows that there should be also a discontinuity in @xmath51 when going from @xmath50 to ( @xmath52 ) with @xmath53 .    in a previous work @xcite
, we have investigated the consequences of the absence of the dd in local xc functionals on the electronic transport of organic molecules .
we have demonstrated that the dd can strongly affect the @xmath0-@xmath1 characteristics of metal - molecule - metal junctions when the coupling between the molecule and the metal is relatively weak .
this would be the case , for instance , where molecules bind to adatoms on the metal surface .
however , we have also shown that in the case of strong coupling the dd had little effect on the transport .
the self - interaction error is largely responsible for the disappearance of the dd in local and semi - local functionals .
it follows that sic methods restore the dd at least in part .
this last aspect is deeply rooted in the orbital minimization needed to extract the sic potential , which unfortunately is not captured by our asic approximation .
therefore the main feature of our asic methodology is simply the correction of the ionization potentials of the molecules @xcite , thus yielding a quantitatively realistic energy level alignment .
hence , the calculations described in this paper investigate a second important aspect of the sic beside that of the dd .
this is the quantitative description of the band alignment between the metal fermi energy and the molecular levels .
in particular , for most of the paper we investigate molecules attached to the gold fcc ( 111 ) hollow sites , for which the coupling is expected to be strong and the effects due to the dd small .
we have numerically implemented the asic method @xcite in the localized atomic orbital code siesta @xcite , which is the dft platform for our transport code _ smeagol _
@xcite , and carried out calculations for the prototypical au / benzene / au molecular devices .
the asic corrections are not applied to the gold atoms , as si errors for metals are small @xcite .
unless otherwise specified , we use a double zeta polarized basis set @xcite for carbon and sulfur @xmath54 and @xmath55 orbitals , double zeta for the 1@xmath54 orbitals of hydrogen and 6@xmath54-only double zeta for gold .
the mesh cut - off is 200 ry and we consider 500 real and 80 complex energy points for integrating the green s function .
calculations were also performed using double zeta 6@xmath54 and single zeta 5@xmath56 and 6@xmath55 orbitals for the gold to investigate the effect of an enlarged basis on the transport .
results for calculations using both basis sets are shown , with the 6@xmath54-only basis used unless otherwise indicated . for geometry optimizations and total energy calculations ,
the extended 5@xmath566@xmath546@xmath55 basis set is employed , as the 6@xmath54-only does not yield enough accuracy . in calculating the @xmath0-@xmath1 curves ,
the potential bias was incremented in steps of 0.1 volts .
we compare the electronic transport properties for three different molecules calculated either by using lda or asic .
these are 1,4-benzenedithiol ( 1,4-bdt ) , benzenedimethanethiol ( bdmt ) , and biphenyldithiol ( bpd ) .
the electronic transport through these molecules have already been investigated at length both experimentally and computationally @xcite .
thus these offer us a unique benchmark for our calculations . in all cases ,
the molecule is attached via the sulfur atoms to fcc ( 111 ) gold electrodes on each side . in the case of bdt , we look at several different anchoring geometries .
it is worth pointing out that although the exact anchoring geometry encountered in breaking junction experiments is unknown , the resulting conductance histograms are relatively narrow suggesting an intrinsic stability in the measurements @xcite .
this may be an indication that similar anchoring configuration are highly probable in the breaking process , or alternatively that several anchoring geometries yield the same @xmath0-@xmath1 characteristic .
one of our goals is to distinguish between these two possibilities .      the first device which we consider is 1,4-benzenedithiol ( 1,4-bdt ) attached to two fcc ( 111 ) gold surfaces .
the anchoring geometries for the sulfur atoms investigated are the hollow site , the top site , the bridge site , ( see figure [ fig3 ] ) , as well as asymmetric configurations where the s ions are attached to an adatom on one side and to the hollow site on the other .
we also examine the effect of altering the angle which the molecule makes with the metal surface , and of varying the distance between the sulfur atom and the surface ( i.e. varying the strength of the coupling between the molecule and the metal ) .
finally , we investigate the effect of hydrogenating the thiol groups .
as explained previously the actual experimental contact geometry is unknown .
electronic structure calculations indicate that the lowest energy configuration for the molecule on the ( 111 ) surface occurs when the s atom attaches to the hollow site , although other calculations suggest that the bridge site configuration has a lower energy @xcite .
recent x - ray standing wave measurements suggest that molecules in monolayers prefer to attach to adatoms on the metal surface @xcite .
it is also worth noticing that in breaking junctions the actual geometry might be different from any equilibrium geometries , since the system is likely to be under strain .
hence , a thorough analysis of this system should comprise many different configurations .
we start by attaching bdt at the au ( 111 ) hollow site ( see figures [ fig3 ] and [ fig4 ] ) . the distance of the sulfur atom from the plane of the gold surface ( the `` sulfur - surface separation '' , @xmath57 , shown in figure [ fig3]a ) is optimized ( using the 5@xmath566@xmath546@xmath55 basis set for gold ) to a value of 1.9   .
this corresponds to a distance of 2.53    between the sulfur atoms and the nearest gold atoms on the surface in good agreement with previous calculations @xcite .
the @xmath0-@xmath1 characteristic , the orbital resolved density of states ( dos ) and the conductance as a function of energy , @xmath58 , are presented in figure [ fig5 ] .
the conductance is plotted in units of @xmath59 , so that it is equivalent to the transmission coefficients @xmath60 .
lda results are shown in the left panels , while the asic ones are on the right . from the dos
it is clear that the effect of asic is that of shifting the occupied orbitals downwards in energy relatively to the @xmath2 of gold .
the asic homo - lumo gap is considerably larger than that calculated with lda and most importantly in the case of asic there is little dos originating from the molecule at @xmath2 .
this has profound effects on the electron transmission .
the lda peaks of @xmath17 arising from occupied orbitals are shifted downwards in energy and away from @xmath2 . at variance from lda ( figure [ fig5]c ) , where @xmath61 is dominated by a resonance at @xmath62 , the asic transmission ( figure [ fig5]d ) is through the bdt gap and therefore it is tunneling - like .
this results in a drastic reduction of the low - bias current when going from lda to asic ( figure [ fig5]e ) .
the asic - calculated conductance at zero bias is now about 0.06@xmath63 ( @xmath64 ) , compared to 0.23@xmath63 for lda .
a conductance of 0.06@xmath63 is much closer to the value of 0.011@xmath63 obtained by xiao et .
@xcite and is actually lower than values 0.09 - 0.14@xmath63 obtained by tsutsui et .
@xcite .    without altering the anchoring geometry , the basis set on the gold atoms
is then changed to include the 5@xmath56 and 6@xmath55 orbitals .
the relative orbital resolved dos , transmission coefficients and @xmath0-@xmath1 curves are presented in figure [ fig6 ] for both lda and asic .
clearly the enriched basis set does not have a large effect on the electronic transport , particularly at low bias . as can be seen from figure [ fig6]e ,
the @xmath0-@xmath1 curves calculated with the 6@xmath54-only basis set for gold are approximately the same as that calculated with the 5@xmath566@xmath546@xmath55 basis set up to about 1 volt for both the lda and asic .
differences appear only at high bias ( @xmath65  volt ) and are due to the presence of au @xmath56 electrons in an energy range comprising the bias window .
however the zero - bias conductances , from the transmission plots in panels ( c ) and ( d ) of figure [ fig6 ] , are very similar to those for the 6@xmath54-only basis set with a value of 0.21@xmath63 for lda and a value of 0.06@xmath63 for asic .
this demonstrates that the 6@xmath54-only basis set should give reasonably reliable results for electronic transport at low bias .
next , the transport properties of the system are calculated for the hollow site at different @xmath57 , as well as for the equilibrium distance @xmath66    but different angles of the molecule with respect to the direction of transport .
the results are reported in figure [ fig7 ] .
in general asic seems to be much less sensitive to changes in the anchoring geometry than lda , particularly for the case of bond stretching .
for instance , the zero bias conductance values calculated with lda are 0.16  @xmath63 , 0.23  @xmath63 , 0.32  @xmath63 and 0.77  @xmath63 for @xmath57 values of 1.8   , 1.9   , 2.1    and 2.5    respectively .
for the same @xmath57 asic returns 0.05  @xmath63 , 0.06  @xmath63 , 0.07  @xmath63 , and 0.14  @xmath63 .
the stability of the asic @xmath0-@xmath1 curve with respect the details of the anchoring geometry of the hollow site is an interesting feature , since it is suggesting that in breaking junction experiments several different anchoring configurations may yield similar @xmath0-@xmath1 curves .
this is consistent with the relatively narrow peaks measured in the typical conductance histograms @xcite .
lda does not seem to have this property and in fact the zero - bias conductance increases quite drastically when @xmath57 is increased . while counterintuitive , this is consistent with previous results @xcite , and it is due to the realignment of the homo of the molecule to @xmath2 of gold .
such a feature is investigated in more detail in figure [ fig8 ] where we report the zero - bias @xmath17 for different @xmath57 . when @xmath57 is increased , the transmission peaks corresponding to molecular orbitals become narrower , as expected , due to the weakened molecule - lead coupling . however , charge transfer between the molecule and the metal is also affected , so that the charge on the actual molecule slightly increases as @xmath57 gets larger .
this extra charge produces an electrostatic shift of the homo level towards the au fermi energy . as a consequence
the narrowing of the resonance peak at the homo level is compensated by the upwards shift of the same peak , resulting in an enhancement of the zero - bias conductance . when asic is used this feature
is strongly suppressed .
in fact , the asic calculated transmission peaks are narrower and further away from @xmath2 that their lda counterparts . thus , although also for asic the molecular homo realigns with respect to the au fermi level , this is is not enough to produce high transmission at reasonable @xmath57 .
note that a similar realignment is expected for weaker binding anchoring geometries which we will investigate in the remainder of this section ( see figures [ fig9]b , [ fig11 ] , [ fig12 ] and [ fig14 ] )        the second contact geometry investigated is that where the s atom is connected to the bridge site on the fcc ( 111 ) au surface at both of the electrodes ( figure [ fig3]b ) .
total energy dft calculations suggest that this configuration ( @xmath67   ) , has a lower energy than that of the hollow site @xcite .
we calculate a lda zero bias conductance for the bridge site of 0.1  @xmath63 , which is lower than the value of 0.23  @xmath63 obtained for the hollow site .
this can be seen from the @xmath0-@xmath1 curves presented in figure [ fig9]a .
interestingly this lower conductance found for the bridge site with respect to the hollow site is a low - bias feature and the two @xmath0-@xmath1 curves matches closely for @xmath68  volt .
the effect of asic on the transmission of the bridge site configuration is rather similar to that on the hollow site .
also in this case the molecular homo - lumo gap opens and the current gets suppressed .
the zero bias conductance for the bridge site is calculated to be 0.06  @xmath63 , the same value found for the hollow site .
hence , whether the molecule is anchored to the hollow site or to the bridge site makes relatively little difference to the low - bias transport properties as obtained with asic .
this further confirms that our asic calculations are certainly more compatible than their lda counterparts with the relative stability of the experimental conductance histograms .
the top site of the au fcc ( 111 ) surface ( figure [ fig3]b ) is the next anchoring site to be investigated .
the equilibrium distance @xmath57 is 2.39     and the calculated @xmath0-@xmath1 curves are presented in figure [ fig9]b .
this time both lda and asic present @xmath0-@xmath1 characteristics with much higher conductance than that associated with the hollow site .
this is particularly dramatic for lda for which the zero - bias conductance goes from 0.23  @xmath63 for the hollow to 0.65  @xmath63 for the top site . for asic
the increase is only twofold with the zero bias conductance going from 0.06  @xmath63 to 0.12  @xmath63 . also for this case
the general increase in current can be correlated with the larger au - s bond - length of the top site compared to the hollow site .
this has the same effect found when analyzing the hollow site under strain and it is due to the realignment of the homo of bdt to @xmath2 of gold .
it is important to point out that the top site is less energetically favorable than both the bridge and the hollow sites .
although it can still play a role in breaking junctions , we believe that this may be only of secondary importance and therefore would not have a considerable influence on the typical conduction histograms .        in actual breaking junctions ,
the electrodes are under strain and so the thiol groups are less likely to attach to a regular surface site .
for instance in figure [ fig10 ] we present the case where one electrode connects to the molecule via the hollow site ( @xmath66   ) and the other via a gold adatom , with a distance of 2.39    between the sulfur and the adatom .
recent x - ray standing wave experiments @xcite demonstrate that gold adatoms may be the most favorable sites for the thiol groups in self - assembled molecular monolayer .
this therefore may be a likely configuration for the bottom electrode in a stm - break junction .
the orbital resolved dos , transmission coefficients and @xmath0-@xmath1 curves for this system are presented in figure [ fig11 ] .
this configuration shows the largest difference between the conductance calculated with lda and that calculated with asic .
the lda conductance is 0.32  @xmath63 , whereas when asic is applied this drops by a order of magnitude to 0.03  @xmath63 .
because of the weaker interaction between the @xmath69 orbitals of the molecule and the gold surface , the molecular orbitals in the dos ( figure [ fig11]a and figure [ fig11]b ) and hence the peaks in the transmission coefficients ( figure [ fig11]c and figure [ fig11]d ) are considerably narrower than for the case of the hollow site .
these narrow levels are however closer to @xmath2 , resulting in the relatively high conductance at low bias .
this originates from the same mechanism producing a change in conductance when @xmath57 is increased ( see figure [ fig8 ] ) . at variance with the case of stretched hollow bonding geometry ,
this time the asic does not shift the conductance peaks enough to bring them close to the fermi level of gold , and the conductance remains rather small .        as the peaks in the transmission are rather narrow we checked our results against the choice of basis set .
in figure [ fig12 ] we present the orbital resolved dos , transmission coefficients and @xmath0-@xmath1 curves for the enlarged 5@xmath566@xmath546@xmath55 basis , to be put in perspective with those calculated with 6@xmath54 only in figure [ fig11 ] .
the most notable difference is the appearance of transmission away from @xmath2 , in particular at low energies .
this is connected to the gold @xmath56 electrons , which are neglected in the small basis .
importantly however the low - energy features around @xmath2 are only slightly affected with the zero - bias conductance assuming values of 0.47  @xmath63 and 0.05@xmath70 for lda and asic respectively .
this confirms the feasibility of using a restricted basis set for the @xmath0-@xmath1 curve at low bias .        finally , we investigate two more configurations .
the first considers adatoms as the bonding site at both sides of the junction ( figure [ fig13 ] ) , while the second investigates hollow sites where the two hydrogens of the thiol groups are not dissociated in forming thiolate as in all the other cases studied ( figure [ fig15 ] ) .
in the first case we expect a rather weak bond , which is confirmed by the sharp peaks in transmission shown in figure [ fig14 ] .
the lda low - bias conductance , calculated with the 5@xmath566@xmath546@xmath55 basis for gold , is 0.43  @xmath63 , which drops to 0.19  @xmath63 when asic is applied . in this case
the molecular homo is pinned at @xmath2 and the transmission remains large .
interestingly this is a situation similar to the one we discussed in our previous work in the context of tight - binding hamiltonian @xcite . in this case
the suppression of the conductance may further originate from the derivative discontinuity of the potential , which may move the peak in the conductance away from @xmath2 .
since this is not described by the asic scheme , we believe that the current in this case may be erroneously large .
the results for the case where bdt is attached to the hollow sites but hydrogen atoms remain attached to thiol anchoring groups are presented in figure [ fig16 ] . the total energy for this situation is 1.47  ev higher than that obtained when the end groups are thiolate and the remaining two h atoms form a h@xmath71 molecule .        as can be seen from the dos in panels ( a ) and ( b ) and the transmission coefficients in panels ( c ) and ( d ) ,
the transport is now through the lumo of the system , the energy of which is lowered only slightly by asic .
hence , the asic zero - bias conductance of 0.09  @xmath63 is higher than the value of 0.06  @xmath63 calculated with lda .
however it is important to note that the small , but significant , downshift of the lumo state caused by asic is only an artifact of our atomic approximation to sic . as an empty state , the sic for the lumo
is not defined and no corrections should be applied .
the second device studied consists of a benzenedimethanethiol ( bdmt ) molecule attached to two gold fcc ( 111 ) surfaces .
two different isomers of are investigated ; in the first the sulfur atoms of the thiol groups lie in the same plane of the benzene ring ( figure [ fig17]a ) , while in the second they are aligned out of plane ( figure [ fig17]b ) . in both cases
they anchor the molecule to the hollow site of the gold fcc ( 111 ) surface .
the orbital resolved dos , transmission coefficients and @xmath0-@xmath1 curves for the first isomer are presented in figure [ fig18 ] for both lda and asic . in this case , as one can see from the orbital resolved density of states ( figures [ fig18]a and [ fig18]b ) , the homo - lumo gap is much larger than that of bdt .
the asic again has the effect of shifting the occupied orbitals downwards in energy , but this has little effect on the transport since the resonances in the transmission coefficients due the homo and lumo lie well outside the bias region investigated .
therefore , asic increases the homo - lumo gap but the actual transmission coefficient around @xmath2 does not change much from its lda value .
the asic conductance at zero bias is calculated to be 0.004@xmath63 , compared to 0.006@xmath63 obtained with lda only .
both these values are one order of magnitude larger than the experimental value of 0.0006@xmath63 obtained by xiao et .
it also follows that the @xmath0-@xmath1 curves ( figures [ fig18]e and [ fig18]f ) obtained with lda and asic respectively are quite similar .
the @xmath0-@xmath1 curve calculated for the second isomer is presented in figure [ fig19 ] .
also in this case the effects of asic are minimal due to the large homo - lumo gap .
the conductance at zero bias is calculated to be 0.015@xmath63 with lda , compared to the value of 0.013@xmath63 for asic .
interestingly this is about a factor 3 larger than that calculated for the first isomer .        in general , in contrast to the case of bdt , for bdmt asic
does not appear to improve the agreement between theory and experiments .
the fact that the fermi level of au is pinned in the middle of the large homo - lumo gap of bdmt , which is already well described by lda , makes the asic corrections rather marginal to transport at moderate voltages .
given the fact that the geometry of the anchoring is not known and that we have only investigated one case , we may conclude that the disagreement between theory and experiments may simply lie in the details of the anchoring geometry .
the third and final system investigated is that of biphenyldithiol ( bpd ) attached to two gold surfaces as shown in figure [ fig20 ] . once again we consider only the gold fcc ( 111 ) hollow site as the anchoring site .
the planes of the two benzene rings are usually tilted with respect to each other by an angle known as the torsion angle , that in this case is calculated to be 37@xmath72 .
the orbital resolved dos , transmission coefficients and @xmath0-@xmath1 curves for this system are presented in figure [ fig21 ] for both lda and asic . once again , asic has the effect of lowering the energy of the occupied molecular orbitals , as can be seen from the dos ( panels ( a ) and ( b ) ) .
this in turn results in opening up the conductance gap in the transmission as shown in panels ( c ) and ( d ) of figure [ fig21 ] . for this molecule ,
the homo is near @xmath2 as in the case of bdt , giving a lda conductance of 0.07@xmath63 at zero bias . when asic is applied , the homo is shifted downwards in energy and outside the bias window for voltages up to 2  volt . in this case
the asic conductance drops to 0.018@xmath63 at @xmath2 and the whole low bias @xmath0-@xmath1 curve shows rather smaller current with respect to its lda counterpart .
the optimum torsion angle is @xmath73@xcite .
however , this may fluctuate due to temperature or when the molecule is under strain in a breaking junction .
panel ( e ) of figure [ fig21 ] shows the @xmath0-@xmath1 curves calculated for the equilibrium torsion angle of @xmath73 , whereas panel ( f ) shows the result for the case when the benzene rings are in the same plane ( i.e. when the torsion angle is @xmath74 ) .
reducing the torsion angle causes an increase in the transmission since the overlap between the @xmath69 orbitals is increased .
the conductance at zero bias for a torsion angle of @xmath74 is 0.09@xmath63 with lda only , and 0.024@xmath63 when asic is applied .
these results show that asic has an effect on bpd similar to the one it has on bdt , i.e. it shifts the homo downwards in energy and reduces the zero - bias conductance . in this case
however even our asic results differ from the experimental data of dadosh et .
@xcite by several orders of magnitude .
since we are essentially in a tunneling situation , the magnitude of the current is severely dependent on the tunneling matrix elements , which in turn are rather sensitive to the details of the anchoring geometry .
although the hollow site is believed to be the preferential site , such a large discrepancy between theory and experiments could be attributed to the contact geometry .
in view of the many contradictory results for the transport properties of molecular junctions , first principles computational tools are becoming increasingly important .
these , however , also suffer from some uncertainty in the results , rooted in the approximations used for computing the junction electronic structure . in this work ,
we have addressed the problem of the self - interaction error in dft and we demonstrate how a simple self - interaction correction scheme can be used to improve the agreement between theory and experiments . in particular , we have considered the problem of correctly reproducing the molecular ionization potential as the negative of the single particle kohn - sham homo energy .
our asic scheme is capable of achieving such a description , and for most of the molecules investigated this has the effect of moving conductance resonances away from the fermi level of the electrodes .
thus , molecular junctions with zero bias resonant transport through the homo become insulating when calculated with asic .
we then investigated transport through bdt attached to the gold ( 111 ) surfaces in several different anchoring geometries .
in general , we have found a systematic reduction of the low bias current when asic is applied .
most importantly , we have demonstrated that a number of anchoring geometries all yield similar low bias conductivities , which in most cases are rather insensitive to bond stretching or bond angle changes .
this suggests that several anchoring geometries might contribute to the peaks in the typical experimental conductance histograms , thus providing a natural explanation for their stability .    nevertheless , even with asic
, some problems still remain . in general ,
if the first molecular orbital to enter the bias window as the bias increases is the lumo , then our method potentially fails .
in fact , asic only partially restores the dft derivative discontinuity , and erroneously @xmath75 . since the size of the derivative discontinuity is unknown , it is difficult at this time to evaluate the impact of such an error .
a second problem is connected to the accuracy of the calculation of the wave - functions .
when no molecular levels appear at the fermi level , the transport is essentially tunneling like , and therefore becomes crucially dependent on the accuracy of the calculated hopping integrals between the molecule and the electrodes .
asic does not drastically improve the quality of the lda wave - function and thus one might expect some errors in the tunneling transmission coefficients . additionally , we do not correct the surface atoms of the electrodes for si , so it is expected that our asic results in general produce overextended orbitals and hence a systematically overestimated current . finally , it is worth noting that asic still overestimates the polarizability of molecules @xcite , with a quantitatively incorrect prediction of the response exchange and correlation field .
the use of xc potentials constructed from exact charge densities @xcite which correct both the molecule and the metallic surfaces may offer a solution to these problems .
however , for some of the molecules investigated the disagreement between theory and experiments is still of several orders of magnitude .
this is difficult to associate with any systematic error in the theory , and might be connected to the specific contact geometry .    in conclusion ,
negf combined with the asic electronic structure method offers a description of transport through molecules which is considerably improved with respect to standard negf lda / gga .
since this is also a computationally undemanding scheme , it can be employed for large systems , and therefore can become an important tool for systematically predicting the performance of molecular junctions .
we thank alex  reily rocha , chaitanya  pemmaraju , kieron  burke and alessio  filippetti for useful discussions .
this work is funded by science foundation of ireland ( grant sfi02/in1/i175 ) .
computational resources have been provided by the hea iitac project managed by the trinity center for high performance computing and by ichec . +            j.  lagerqvist , m.  zwolak and m. di ventra , nano letters * 6 * , 779 ( 2006 ) ; m.  zwolak and m.  di  ventra , nano letters * 5 * , 421 ( 2005 ) ; r.  zikic , p.s .
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