Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
J. P. Wendoloski, J. Hillier, S. Liles, M. Rendell, Y. Ashlea-Alava, B. Raes, R. Li, S. Kubicek, C. Godfrin, J. Jussot, S. Beyne, D. Wan, Md. M. Rahman, S. Yianni, K. W. Chan, F. E. Hudson, W. H. Lim, K. D. Greve, A. Dzurak, A. Hamilton